{"id":"https://openalex.org/W3013318343","doi":"https://doi.org/10.1109/tcsi.2020.2980074","title":"Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density","display_name":"Monolithic 3D Carbon Nanotube Memory for Enhanced Yield and Integration Density","publication_year":2020,"publication_date":"2020-03-24","ids":{"openalex":"https://openalex.org/W3013318343","doi":"https://doi.org/10.1109/tcsi.2020.2980074","mag":"3013318343"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2020.2980074","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2020.2980074","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5102022581","display_name":"Yanan Sun","orcid":"https://orcid.org/0000-0001-8281-9121"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanan Sun","raw_affiliation_strings":["Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0001-8281-9121","affiliations":[{"raw_affiliation_string":"Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai, China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101583945","display_name":"Weifeng He","orcid":"https://orcid.org/0000-0002-7753-644X"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weifeng He","raw_affiliation_strings":["Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0002-7753-644X","affiliations":[{"raw_affiliation_string":"Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai, China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103236320","display_name":"Zhigang Mao","orcid":"https://orcid.org/0000-0001-9431-9853"},"institutions":[{"id":"https://openalex.org/I183067930","display_name":"Shanghai Jiao Tong University","ror":"https://ror.org/0220qvk04","country_code":"CN","type":"education","lineage":["https://openalex.org/I183067930"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhigang Mao","raw_affiliation_strings":["Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Micro-Nano Electronics, Shanghai Jiao Tong University, Shanghai, China","institution_ids":["https://openalex.org/I183067930"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042636120","display_name":"Hailong Jiao","orcid":"https://orcid.org/0000-0002-2815-6168"},"institutions":[{"id":"https://openalex.org/I20231570","display_name":"Peking University","ror":"https://ror.org/02v51f717","country_code":"CN","type":"education","lineage":["https://openalex.org/I20231570"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hailong Jiao","raw_affiliation_strings":["School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, China"],"raw_orcid":"https://orcid.org/0000-0002-2815-6168","affiliations":[{"raw_affiliation_string":"School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, China","institution_ids":["https://openalex.org/I20231570"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042147600","display_name":"Volkan Kursun","orcid":"https://orcid.org/0000-0002-8050-1774"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Volkan Kursun","raw_affiliation_strings":["Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.0094,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.75306762,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"67","issue":"7","first_page":"2431","last_page":"2441"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.8762360215187073},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6458978652954102},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6046884655952454},{"id":"https://openalex.org/keywords/realization","display_name":"Realization (probability)","score":0.5290481448173523},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5137640237808228},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.5047880411148071},{"id":"https://openalex.org/keywords/carbon-nanotube","display_name":"Carbon nanotube","score":0.46922191977500916},{"id":"https://openalex.org/keywords/carbon-nanotube-field-effect-transistor","display_name":"Carbon nanotube field-effect transistor","score":0.4648318290710449},{"id":"https://openalex.org/keywords/skew","display_name":"Skew","score":0.4337013065814972},{"id":"https://openalex.org/keywords/yield","display_name":"Yield (engineering)","score":0.43079593777656555},{"id":"https://openalex.org/keywords/process","display_name":"Process (computing)","score":0.42877498269081116},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.419422447681427},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.41626566648483276},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.34387195110321045},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3298051953315735},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.2837314009666443},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.22808969020843506},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11769121885299683},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09395933151245117},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.061221182346343994}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.8762360215187073},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6458978652954102},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6046884655952454},{"id":"https://openalex.org/C2781089630","wikidata":"https://www.wikidata.org/wiki/Q21856745","display_name":"Realization (probability)","level":2,"score":0.5290481448173523},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5137640237808228},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.5047880411148071},{"id":"https://openalex.org/C513720949","wikidata":"https://www.wikidata.org/wiki/Q1778729","display_name":"Carbon nanotube","level":2,"score":0.46922191977500916},{"id":"https://openalex.org/C58916441","wikidata":"https://www.wikidata.org/wiki/Q1778563","display_name":"Carbon nanotube field-effect transistor","level":5,"score":0.4648318290710449},{"id":"https://openalex.org/C43711488","wikidata":"https://www.wikidata.org/wiki/Q7534783","display_name":"Skew","level":2,"score":0.4337013065814972},{"id":"https://openalex.org/C134121241","wikidata":"https://www.wikidata.org/wiki/Q899301","display_name":"Yield (engineering)","level":2,"score":0.43079593777656555},{"id":"https://openalex.org/C98045186","wikidata":"https://www.wikidata.org/wiki/Q205663","display_name":"Process (computing)","level":2,"score":0.42877498269081116},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.419422447681427},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.41626566648483276},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.34387195110321045},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3298051953315735},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.2837314009666443},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.22808969020843506},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11769121885299683},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09395933151245117},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.061221182346343994},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/tcsi.2020.2980074","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2020.2980074","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},{"id":"pmh:oai:repository.hkust.edu.hk:1783.1-104627","is_oa":false,"landing_page_url":"http://repository.hkust.edu.hk/ir/Record/1783.1-104627","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":null,"raw_type":"Article"},{"id":"pmh:oai:repository.ust.hk:1783.1-104627","is_oa":false,"landing_page_url":"http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000543971900024","pdf_url":null,"source":{"id":"https://openalex.org/S4306401796","display_name":"Rare & Special e-Zone (The Hong Kong University of Science and Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I200769079","host_organization_name":"Hong Kong University of Science and Technology","host_organization_lineage":["https://openalex.org/I200769079"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2909982992","display_name":null,"funder_award_id":"61704104","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G919204815","display_name":null,"funder_award_id":"2018YFB2202004","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W189008600","https://openalex.org/W1526219215","https://openalex.org/W2026621494","https://openalex.org/W2037737201","https://openalex.org/W2045933611","https://openalex.org/W2102655721","https://openalex.org/W2107905696","https://openalex.org/W2312212049","https://openalex.org/W2322620354","https://openalex.org/W2509960745","https://openalex.org/W2532205282","https://openalex.org/W2585097298","https://openalex.org/W2587248968","https://openalex.org/W2588107081","https://openalex.org/W2731422849","https://openalex.org/W2792418604","https://openalex.org/W2810663641","https://openalex.org/W2906872651","https://openalex.org/W2907909057","https://openalex.org/W2913124617","https://openalex.org/W2970187632","https://openalex.org/W3101159937","https://openalex.org/W6732922627"],"related_works":["https://openalex.org/W2997919932","https://openalex.org/W4224860143","https://openalex.org/W2010483191","https://openalex.org/W2297319780","https://openalex.org/W4247832579","https://openalex.org/W4240835171","https://openalex.org/W2520795347","https://openalex.org/W3156670728","https://openalex.org/W2892303075","https://openalex.org/W2785328438"],"abstract_inverted_index":{"Carbon":[0],"nanotube":[1],"field":[2],"effect":[3],"transistor":[4],"(CN-MOSFET)":[5],"is":[6],"attractive":[7],"for":[8,90],"the":[9,27,39,65,93,99,107,112,117,127,147,152,163],"realization":[10],"of":[11,29,41,55,95,103],"future":[12],"monolithic":[13],"three-dimensional":[14],"(M3D)":[15],"memory":[16,85,109,135,168],"circuits":[17,57,150],"with":[18,111],"ultra-high":[19,78],"integration":[20,52,118],"density,":[21],"capacity,":[22],"efficiency,":[23],"and":[24,80,101,131,142,166],"speed.":[25],"However,":[26],"yield":[28,141],"each":[30,104],"vertically-stacked":[31],"active":[32],"layer":[33],"can":[34],"be":[35,61],"significantly":[36],"degraded":[37],"by":[38,47,64,120,156],"presence":[40],"metallic":[42],"carbon":[43],"nanotubes":[44],"(m-CNs)":[45],"caused":[46],"process":[48],"imperfections.":[49],"The":[50],"potential":[51],"density":[53,79,119],"benefits":[54],"M3D":[56,82,134,167],"also":[58],"may":[59],"not":[60],"fully":[62],"realized":[63],"large":[66],"area":[67,102],"skews":[68],"between":[69],"different":[70],"layers":[71],"within":[72],"standard":[73],"cells.":[74],"In":[75],"this":[76],"paper,":[77],"robust":[81,144],"static":[83],"random-access":[84],"(SRAM)":[86],"cells":[87,115],"are":[88],"proposed":[89,113,148],"tolerance":[91],"to":[92,122,126,158,162],"removal":[94],"m-CNs.":[96],"By":[97],"minimizing":[98],"skew":[100],"device":[105],"layer,":[106],"16Kibit":[108],"arrays":[110],"SRAM":[114,149],"enhance":[116,151],"up":[121,157],"82.92%":[123],"as":[124,160],"compared":[125,161],"carbon-based":[128],"traditional":[129],"2D":[130,165],"previously":[132],"published":[133],"arrays.":[136,169],"While":[137],"achieving":[138],"high":[139],"functional":[140],"maintaining":[143],"read/write":[145],"operations,":[146],"overall":[153],"electrical":[154],"quality":[155],"27.41x":[159],"alternative":[164]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}