{"id":"https://openalex.org/W2921402340","doi":"https://doi.org/10.1109/tcsi.2019.2898006","title":"Modeling and Mitigating Time-Dependent Variability From the Physical Level to the Circuit Level","display_name":"Modeling and Mitigating Time-Dependent Variability From the Physical Level to the Circuit Level","publication_year":2019,"publication_date":"2019-03-12","ids":{"openalex":"https://openalex.org/W2921402340","doi":"https://doi.org/10.1109/tcsi.2019.2898006","mag":"2921402340"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2019.2898006","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2019.2898006","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027765192","display_name":"Victor M. van Santen","orcid":"https://orcid.org/0000-0002-6629-4713"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Victor M. van Santen","raw_affiliation_strings":["Chair of Embedded Systems, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Embedded Systems, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059133190","display_name":"Hussam Amrouch","orcid":"https://orcid.org/0000-0002-5649-3102"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["Chair of Embedded Systems, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Embedded Systems, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063508488","display_name":"J\u00f6rg Henkel","orcid":"https://orcid.org/0000-0001-9602-2922"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jorg Henkel","raw_affiliation_strings":["Chair of Embedded Systems, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"affiliations":[{"raw_affiliation_string":"Chair of Embedded Systems, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5027765192"],"corresponding_institution_ids":["https://openalex.org/I102335020"],"apc_list":null,"apc_paid":null,"fwci":1.55,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.83049086,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"66","issue":"7","first_page":"2671","last_page":"2684"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7093127965927124},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6209996342658997},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5887475609779358},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5826021432876587},{"id":"https://openalex.org/keywords/observable","display_name":"Observable","score":0.5402151942253113},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5310573577880859},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.4757154583930969},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.45493775606155396},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.42745670676231384},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.263068825006485},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.24010595679283142},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.21590256690979004},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15656337141990662},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.08195027709007263}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7093127965927124},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6209996342658997},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5887475609779358},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5826021432876587},{"id":"https://openalex.org/C32848918","wikidata":"https://www.wikidata.org/wiki/Q845789","display_name":"Observable","level":2,"score":0.5402151942253113},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5310573577880859},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.4757154583930969},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.45493775606155396},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.42745670676231384},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.263068825006485},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.24010595679283142},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21590256690979004},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15656337141990662},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.08195027709007263},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2019.2898006","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2019.2898006","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.4099999964237213,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W1529164337","https://openalex.org/W1546318334","https://openalex.org/W1971367461","https://openalex.org/W1987145716","https://openalex.org/W1988922865","https://openalex.org/W2025338205","https://openalex.org/W2039138127","https://openalex.org/W2075787867","https://openalex.org/W2091163742","https://openalex.org/W2108880814","https://openalex.org/W2124618076","https://openalex.org/W2130990312","https://openalex.org/W2137366465","https://openalex.org/W2138724413","https://openalex.org/W2139423216","https://openalex.org/W2149134343","https://openalex.org/W2150424241","https://openalex.org/W2153685625","https://openalex.org/W2155382325","https://openalex.org/W2167021379","https://openalex.org/W2396345169","https://openalex.org/W2525131880","https://openalex.org/W2613791011","https://openalex.org/W2621017693","https://openalex.org/W2729749234","https://openalex.org/W2800054291","https://openalex.org/W2909727190","https://openalex.org/W3145030156","https://openalex.org/W6647561237","https://openalex.org/W6676056936"],"related_works":["https://openalex.org/W1994680671","https://openalex.org/W2000283393","https://openalex.org/W2002320543","https://openalex.org/W2150232912","https://openalex.org/W2054940838","https://openalex.org/W2061947244","https://openalex.org/W4321855183","https://openalex.org/W3106170641","https://openalex.org/W2389800961","https://openalex.org/W1995389502"],"abstract_inverted_index":{"Variability":[0],"is":[1,33,39,55,70,132,206],"one":[2],"of":[3,67,194,197,202,229],"the":[4,10,26,65,140,150,153,176,195,200,227,250],"major":[5],"challenges":[6],"for":[7,36,139,173,191],"CMOS":[8],"in":[9,56,64],"nano":[11],"era.":[12],"Manufacturers":[13],"test":[14],"each":[15,265],"circuit":[16,154],"sample":[17],"to":[18,58,125,152,168,216,242,248,281,284],"ensure":[19],"that":[20,22],"samples":[21],"do":[23],"not":[24,71],"meet":[25],"desired":[27],"specification":[28,161,234],"are":[29,80,111,240],"discarded.":[30],"However,":[31],"testing":[32],"only":[34],"effective":[35],"variability,":[37],"which":[38,69,110,245],"observable":[40,73,103],"right":[41],"after":[42,75,114],"manufacturing,":[43],"such":[44,127,268],"as":[45,122,128,269],"geometric":[46],"variations,":[47],"work":[48],"function,":[49],"and":[50,95,100,130,185,218,235,275],"random":[51,96],"dopant":[52],"fluctuation.":[53],"This":[54],"contrast":[57],"time-dependent":[59],"variability":[60,253],"(TDV),":[61],"i.e.,":[62],"differences":[63],"defects":[66,79],"transistors,":[68],"macroscopically":[72],"immediately":[74],"manufacturing.":[76],"In":[77,134,257],"fact,":[78],"electrically":[81],"neutral":[82],"until":[83],"they":[84],"capture":[85],"a":[86,145,163,277],"carrier":[87],"[with":[88],"mechanisms":[89],"called":[90],"bias":[91],"temperature":[92],"instability":[93],"(BTI)":[94],"telegraph":[97],"noise":[98],"(RTN)]":[99],"thus":[101],"become":[102],"through":[104],"their":[105,120,123],"induced":[106],"degradation.":[107],"Therefore,":[108],"transistors":[109],"characterized":[112],"identically":[113],"manufacturing":[115],"will":[116],"drift":[117],"apart":[118],"during":[119],"lifetime,":[121],"susceptibility":[124],"effects":[126],"BTI":[129],"RTN":[131],"different.":[133],"this":[135],"paper,":[136],"we":[137,239,259],"model":[138,217,243],"first":[141],"time":[142],"TDV":[143,174,198,230],"from":[144],"defect-centric":[146,158],"physical":[147],"perspective":[148],"all":[149],"way":[151],"level.":[155],"Our":[156,204],"novel":[157,181,278],"transistor":[159,177,273],"reliability":[160,233],"provides":[162],"fast,":[164],"yet":[165],"accurate":[166],"method":[167],"estimate":[169],"an":[170],"upper":[171],"bound":[172],"on":[175,199,264],"level,":[178],"while":[179],"our":[180,232],"worst":[182,186],"cell":[183,237],"(WCL)":[184],"value":[187],"(WVL)":[188],"libraries":[189],"allow":[190],"fast":[192],"evaluation":[193],"impact":[196,228],"timing":[201],"circuits.":[203],"approach":[205],"fully":[207],"compatible":[208],"with":[209,231],"existing":[210],"EDA":[211],"tool":[212],"flows,":[213],"allowing":[214],"us":[215,247],"optimize":[219],"complex":[220],"circuits":[221],"like":[222],"full":[223],"microprocessors.":[224],"By":[225],"evaluating":[226],"variability-aware":[236,279],"libraries,":[238],"able":[241],"TDV,":[244],"allowed":[246],"reduce":[249],"required":[251],"defect":[252],"guardband":[254,287],"by":[255],"46%.":[256],"addition,":[258],"provide":[260],"design":[261],"optimization":[262],"strategies":[263],"abstraction":[266],"level":[267],"limiting":[270],"continuous":[271],"stress,":[272],"hardening,":[274],"implement":[276],"synthesis":[280],"achieve":[282],"up":[283],"57%":[285],"additional":[286],"reduction.":[288]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}