{"id":"https://openalex.org/W2899871389","doi":"https://doi.org/10.1109/tcsi.2018.2876785","title":"Low-Power Near-Threshold 10T SRAM Bit Cells With Enhanced Data-Independent Read Port Leakage for Array Augmentation in 32-nm CMOS","display_name":"Low-Power Near-Threshold 10T SRAM Bit Cells With Enhanced Data-Independent Read Port Leakage for Array Augmentation in 32-nm CMOS","publication_year":2018,"publication_date":"2018-11-06","ids":{"openalex":"https://openalex.org/W2899871389","doi":"https://doi.org/10.1109/tcsi.2018.2876785","mag":"2899871389"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2018.2876785","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2018.2876785","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101771348","display_name":"Shourya Gupta","orcid":"https://orcid.org/0000-0002-1804-5202"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shourya Gupta","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA"],"raw_orcid":"https://orcid.org/0000-0002-1804-5202","affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082620922","display_name":"Kirti Gupta","orcid":"https://orcid.org/0000-0003-0565-0654"},"institutions":[{"id":"https://openalex.org/I887998513","display_name":"Bharati Vidyapeeth Deemed University","ror":"https://ror.org/0052mmx10","country_code":"IN","type":"education","lineage":["https://openalex.org/I887998513"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Kirti Gupta","raw_affiliation_strings":["Bharati Vidyapeeth\u2019s College of Engineering, New Delhi, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Bharati Vidyapeeth\u2019s College of Engineering, New Delhi, India","institution_ids":["https://openalex.org/I887998513"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080557997","display_name":"Benton H. Calhoun","orcid":"https://orcid.org/0000-0002-3770-5050"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Benton H. Calhoun","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5022476734","display_name":"Neeta Pandey","orcid":"https://orcid.org/0000-0003-2911-7061"},"institutions":[{"id":"https://openalex.org/I863896202","display_name":"Delhi Technological University","ror":"https://ror.org/01ztcvt22","country_code":"IN","type":"education","lineage":["https://openalex.org/I863896202"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Neeta Pandey","raw_affiliation_strings":["Department of Electronics and Communication Engineering, Delhi Technological University, New Delhi, India"],"raw_orcid":"https://orcid.org/0000-0003-2911-7061","affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, Delhi Technological University, New Delhi, India","institution_ids":["https://openalex.org/I863896202"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.6666,"has_fulltext":false,"cited_by_count":84,"citation_normalized_percentile":{"value":0.9371707,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":100},"biblio":{"volume":"66","issue":"3","first_page":"978","last_page":"988"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7978805899620056},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.6206105947494507},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6038227677345276},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5542591214179993},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5485211610794067},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5455756187438965},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.4455111622810364},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.43856796622276306},{"id":"https://openalex.org/keywords/decoding-methods","display_name":"Decoding methods","score":0.43341583013534546},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3467302918434143},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19414332509040833},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.17828035354614258},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.14613282680511475}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7978805899620056},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.6206105947494507},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6038227677345276},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5542591214179993},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5485211610794067},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5455756187438965},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4455111622810364},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.43856796622276306},{"id":"https://openalex.org/C57273362","wikidata":"https://www.wikidata.org/wiki/Q576722","display_name":"Decoding methods","level":2,"score":0.43341583013534546},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3467302918434143},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19414332509040833},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.17828035354614258},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.14613282680511475},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2018.2876785","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2018.2876785","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":37,"referenced_works":["https://openalex.org/W1983735574","https://openalex.org/W1989243598","https://openalex.org/W1993921530","https://openalex.org/W2004965314","https://openalex.org/W2036742943","https://openalex.org/W2064136443","https://openalex.org/W2067392247","https://openalex.org/W2080315717","https://openalex.org/W2086651097","https://openalex.org/W2088675848","https://openalex.org/W2093108390","https://openalex.org/W2094648661","https://openalex.org/W2099087448","https://openalex.org/W2099231065","https://openalex.org/W2101512185","https://openalex.org/W2106264726","https://openalex.org/W2106339466","https://openalex.org/W2111701388","https://openalex.org/W2122618758","https://openalex.org/W2125347149","https://openalex.org/W2127628206","https://openalex.org/W2136393784","https://openalex.org/W2142748076","https://openalex.org/W2144289559","https://openalex.org/W2148604743","https://openalex.org/W2150652202","https://openalex.org/W2155475483","https://openalex.org/W2159375591","https://openalex.org/W2165261792","https://openalex.org/W2165720303","https://openalex.org/W2167210005","https://openalex.org/W2321543641","https://openalex.org/W2544676522","https://openalex.org/W2609881373","https://openalex.org/W2792232768","https://openalex.org/W6667544498","https://openalex.org/W6680178178"],"related_works":["https://openalex.org/W2297319780","https://openalex.org/W2178217057","https://openalex.org/W1972800815","https://openalex.org/W2550723781","https://openalex.org/W2548830639","https://openalex.org/W4252086734","https://openalex.org/W2159770326","https://openalex.org/W2078971946","https://openalex.org/W1992349508","https://openalex.org/W2051027227"],"abstract_inverted_index":{"The":[0],"conventional":[1,25,126,164],"six-transistor":[2],"static":[3],"random":[4],"access":[5,180],"memory":[6,204],"(SRAM)":[7],"cell":[8,28],"allows":[9],"high":[10,84],"density":[11],"and":[12,20,48,83,120,123,127,153,181,200,209],"fast":[13],"differential":[14],"sensing":[15],"but":[16],"suffers":[17,35],"from":[18,36,142,159],"half-select":[19],"read-disturb":[21,31],"issues.":[22],"Although":[23],"the":[24,30,61,133,143,187,198],"eight-transistor":[26],"SRAM":[27,97,148],"solves":[29],"issue,":[32],"it":[33],"still":[34],"low":[37,77],"array":[38],"efficiency":[39],"due":[40],"to":[41,69,106,113,167,174,183],"deterioration":[42],"of":[43,63,96,145],"read":[44,103,110,118],"bit-line":[45],"(RBL)":[46],"swing":[47],"I":[49],"<sub":[50,54],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[51,55],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</sub>":[52],"/I":[53],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">off</sub>":[56],"ratio":[57],"with":[58,100,136,150],"increase":[59],"in":[60,89,170,177,186,206],"number":[62],"cells":[64,99],"per":[65,86,179],"column.":[66],"Previous":[67],"approaches":[68],"solve":[70],"these":[71],"issues":[72],"have":[73],"been":[74],"afflicted":[75],"by":[76,139],"performance,":[78,119,172],"data-dependent":[79,109],"leakage,":[80],"large":[81,160],"area,":[82],"energy":[85,178],"access.":[87],"Therefore,":[88],"this":[90],"paper,":[91],"we":[92],"present":[93],"three":[94],"iterations":[95],"bit":[98],"nMOS-only":[101],"based":[102],"ports":[104],"aimed":[105],"greatly":[107],"reduce":[108,121],"port":[111],"leakage":[112],"enable":[114],"1k":[115],"cells/RBL,":[116],"improve":[117],"area":[122,188],"power":[124],"over":[125,163,192],"10T":[128,194],"cell-based":[129],"works.":[130],"We":[131],"compare":[132],"proposed":[134],"work":[135],"other":[137,193],"works":[138],"recording":[140],"metrics":[141],"simulation":[144],"a":[146,154],"128-kb":[147],"constructed":[149],"divided-wordline-decoding":[151],"architecture":[152],"32-bit":[155],"word":[156],"size.":[157],"Apart":[158],"improvements":[161],"observed":[162,191],"cells,":[165,195],"up":[166,173,182],"100-mV":[168],"improvement":[169],"read-access":[171],"19.8%":[175],"saving":[176,185],"19.5%":[184],"are":[189],"also":[190],"thereby":[196],"enlarging":[197],"design":[199],"application":[201],"gamut":[202],"for":[203],"designers":[205],"low-power":[207],"sensors":[208],"battery-enabled":[210],"devices.":[211]},"counts_by_year":[{"year":2026,"cited_by_count":3},{"year":2025,"cited_by_count":8},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":8},{"year":2022,"cited_by_count":28},{"year":2021,"cited_by_count":18},{"year":2020,"cited_by_count":7},{"year":2019,"cited_by_count":3}],"updated_date":"2026-06-25T08:15:23.626066","created_date":"2025-10-10T00:00:00"}