{"id":"https://openalex.org/W2544608590","doi":"https://doi.org/10.1109/tcsi.2016.2616907","title":"Printed Electronics: Effects of Bending and a Self-Compensation Means","display_name":"Printed Electronics: Effects of Bending and a Self-Compensation Means","publication_year":2016,"publication_date":"2016-10-31","ids":{"openalex":"https://openalex.org/W2544608590","doi":"https://doi.org/10.1109/tcsi.2016.2616907","mag":"2544608590"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2016.2616907","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2016.2616907","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101771017","display_name":"Zhou Jia","orcid":"https://orcid.org/0000-0002-9383-6389"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Jia Zhou","raw_affiliation_strings":["VIRTUS, IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":"https://orcid.org/0000-0002-9383-6389","affiliations":[{"raw_affiliation_string":"VIRTUS, IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102742128","display_name":"Tong Ge","orcid":"https://orcid.org/0000-0002-0284-4069"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Tong Ge","raw_affiliation_strings":["VIRTUS, IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":"https://orcid.org/0000-0002-0284-4069","affiliations":[{"raw_affiliation_string":"VIRTUS, IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5023352317","display_name":"Joseph S. Chang","orcid":"https://orcid.org/0000-0003-0991-8339"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Joseph S. Chang","raw_affiliation_strings":["VIRTUS, IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"VIRTUS, IC Design Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I172675005"],"apc_list":null,"apc_paid":null,"fwci":1.0235,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.77090483,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"64","issue":"3","first_page":"505","last_page":"515"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10338","display_name":"Advanced Sensor and Energy Harvesting Materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10338","display_name":"Advanced Sensor and Energy Harvesting Materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11523","display_name":"Nanomaterials and Printing Technologies","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6516177654266357},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6070172786712646},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.566828191280365},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.48248839378356934},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42874276638031006},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.4280472993850708},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42531639337539673},{"id":"https://openalex.org/keywords/bend-radius","display_name":"Bend radius","score":0.41943567991256714},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.4120848476886749},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3880770802497864},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.34659379720687866},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.302184522151947},{"id":"https://openalex.org/keywords/bending","display_name":"Bending","score":0.28893283009529114},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23840385675430298}],"concepts":[{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6516177654266357},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6070172786712646},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.566828191280365},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.48248839378356934},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42874276638031006},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.4280472993850708},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42531639337539673},{"id":"https://openalex.org/C161690185","wikidata":"https://www.wikidata.org/wiki/Q16984090","display_name":"Bend radius","level":3,"score":0.41943567991256714},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4120848476886749},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3880770802497864},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.34659379720687866},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.302184522151947},{"id":"https://openalex.org/C87210426","wikidata":"https://www.wikidata.org/wiki/Q1072476","display_name":"Bending","level":2,"score":0.28893283009529114},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23840385675430298},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2016.2616907","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2016.2616907","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":35,"referenced_works":["https://openalex.org/W108433015","https://openalex.org/W1644501417","https://openalex.org/W1974696580","https://openalex.org/W1974791436","https://openalex.org/W1980125025","https://openalex.org/W1986448207","https://openalex.org/W1997152910","https://openalex.org/W1997786207","https://openalex.org/W2000415031","https://openalex.org/W2001791509","https://openalex.org/W2002870819","https://openalex.org/W2005287869","https://openalex.org/W2037567991","https://openalex.org/W2048953877","https://openalex.org/W2052513637","https://openalex.org/W2061453480","https://openalex.org/W2067097255","https://openalex.org/W2073126994","https://openalex.org/W2073629541","https://openalex.org/W2074200107","https://openalex.org/W2082315983","https://openalex.org/W2092246982","https://openalex.org/W2104350638","https://openalex.org/W2115028845","https://openalex.org/W2124212824","https://openalex.org/W2145279932","https://openalex.org/W2149856173","https://openalex.org/W2171130677","https://openalex.org/W2198930987","https://openalex.org/W2212410734","https://openalex.org/W2248005399","https://openalex.org/W2326584007","https://openalex.org/W2331017946","https://openalex.org/W3213157473","https://openalex.org/W4255852758"],"related_works":["https://openalex.org/W3200817179","https://openalex.org/W1960166976","https://openalex.org/W1992708211","https://openalex.org/W2380067098","https://openalex.org/W1548152478","https://openalex.org/W2137172615","https://openalex.org/W2106247205","https://openalex.org/W3215142653","https://openalex.org/W1487051936","https://openalex.org/W194748710"],"abstract_inverted_index":{"A":[0],"highly-worthy":[1],"attribute":[2],"of":[3,21,48,58,79,89,152,169,180,192],"printed":[4,24,52],"electronics":[5],"is":[6,124,140,187],"its":[7],"possible":[8],"realization":[9],"on":[10,149,177],"flexible-substrates":[11],"that":[12,67,115],"can":[13],"be":[14],"molded/bent.":[15],"Heretofore,":[16],"investigations":[17],"into":[18,45,173],"the":[19,46,76,84,87,92,96,127,129,150,167,178,181,190],"effects":[20,37,47],"bending":[22,50],"to":[23,34,51,64,198],"circuit-elements/circuits":[25],"remain":[26],"not":[27],"only":[28],"largely":[29],"incomplete,":[30],"but":[31,86],"an":[32],"electronic/layout-means":[33],"mitigate":[35],"said":[36,59],"remains":[38],"unreported/unresolved.":[39],"We":[40],"present":[41],"a":[42,161,170],"comprehensive":[43],"investigation":[44],"concave/convex":[49],"circuit-elements":[53],"and":[54,75,81,94,101,106,120,131,137,145],"basic-circuits.":[55],"The":[56,184],"variations":[57,97,133,193],"circuitelements":[60],"range":[61,98,134],"from":[62,99,135,195],"mild":[63],"severe,":[65],"depicting":[66],"for":[68,104,121,143],"accurate":[69],"transfer-functions,":[70],"capacitor-based":[71],"circuits":[72,117],"are":[73,83,118],"preferred;":[74,119],"variation":[77],"directions":[78],"capacitors":[80],"resistors":[82],"same,":[85],"converse":[88],"transistors.":[90],"For":[91,126],"inverter":[93],"ring-oscillator,":[95],"moderate-to-very-severe":[100],"severe-to-extremely-severe":[102],"respectively":[103,141],"diode-connected":[105],"zero-V":[107],"<sub":[108],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[109],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">GS</sub>":[110],"connected":[111],"topologies.":[112],"This":[113],"depicts":[114],"diodeconnected":[116],"speed,":[122],"concave-bending":[123],"preferred.":[125],"op-amp,":[128],"gain":[130],"gain-bandwidth":[132,144],"mild-to-severe;":[136],"concaveand":[138],"convexbending":[139],"preferred":[142],"gain.":[146],"By":[147],"leveraging":[148],"process-simplicity":[151],"our":[153],"fully-additive":[154],"all-air":[155],"low-temperature":[156],"printing":[157],"processes,":[158],"we":[159],"propose":[160],"novel":[162],"localized":[163],"self-compensation":[164],"means":[165,186],"involving":[166],"partition":[168],"given":[171],"circuit-element/circuit":[172],"two-halves,":[174],"each":[175],"placed":[176],"top/bottom":[179],"flexible-substrate":[182],"surface.":[183],"proposed":[185],"highly":[188],"efficacious-":[189],"reduction":[191],"ranges":[194],"~":[196],"2\u00d7":[197],">":[199],"100\u00d7,":[200],"yet":[201],"without":[202],"power,":[203],"hardware":[204],"or":[205],"substrate-area":[206],"overheads.":[207]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":3},{"year":2017,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}