{"id":"https://openalex.org/W2320369349","doi":"https://doi.org/10.1109/tcsi.2016.2525043","title":"History Erase Effect in a Non-Volatile Memristor","display_name":"History Erase Effect in a Non-Volatile Memristor","publication_year":2016,"publication_date":"2016-03-01","ids":{"openalex":"https://openalex.org/W2320369349","doi":"https://doi.org/10.1109/tcsi.2016.2525043","mag":"2320369349"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2016.2525043","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2016.2525043","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5023152110","display_name":"Alon Ascoli","orcid":"https://orcid.org/0000-0003-4026-9648"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"Technische Universit\u00e4t Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Alon Ascoli","raw_affiliation_strings":["Institut f\u00fcr Grundlagen der Elektrotechnik und Elektronik, Technische Universit\u00e4t Dresden, Dresden, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut f\u00fcr Grundlagen der Elektrotechnik und Elektronik, Technische Universit\u00e4t Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012451668","display_name":"Ronald Tetzlaff","orcid":"https://orcid.org/0000-0001-7436-0103"},"institutions":[{"id":"https://openalex.org/I78650965","display_name":"Technische Universit\u00e4t Dresden","ror":"https://ror.org/042aqky30","country_code":"DE","type":"education","lineage":["https://openalex.org/I78650965"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Ronald Tetzlaff","raw_affiliation_strings":["Institut f\u00fcr Grundlagen der Elektrotechnik und Elektronik, Technische Universit\u00e4t Dresden, Dresden, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institut f\u00fcr Grundlagen der Elektrotechnik und Elektronik, Technische Universit\u00e4t Dresden, Dresden, Germany","institution_ids":["https://openalex.org/I78650965"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090657067","display_name":"Leon O. Chua","orcid":"https://orcid.org/0000-0002-1652-5464"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Leon O. Chua","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California Berkeley, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008006179","display_name":"John Paul Strachan","orcid":"https://orcid.org/0000-0002-1382-3677"},"institutions":[{"id":"https://openalex.org/I1324840837","display_name":"Hewlett-Packard (United States)","ror":"https://ror.org/059rn9488","country_code":"US","type":"company","lineage":["https://openalex.org/I1324840837"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"John Paul Strachan","raw_affiliation_strings":["Hewlett Packard Labs, Palo Alto, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hewlett Packard Labs, Palo Alto, CA, USA","institution_ids":["https://openalex.org/I1324840837"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083302653","display_name":"R. Stanley Williams","orcid":"https://orcid.org/0000-0003-0213-4259"},"institutions":[{"id":"https://openalex.org/I1324840837","display_name":"Hewlett-Packard (United States)","ror":"https://ror.org/059rn9488","country_code":"US","type":"company","lineage":["https://openalex.org/I1324840837"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Richard Stanley Williams","raw_affiliation_strings":["Hewlett Packard Labs, Palo Alto, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Hewlett Packard Labs, Palo Alto, CA, USA","institution_ids":["https://openalex.org/I1324840837"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":4.6913,"has_fulltext":false,"cited_by_count":78,"citation_normalized_percentile":{"value":0.95141746,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":100},"biblio":{"volume":"63","issue":"3","first_page":"389","last_page":"400"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T10581","display_name":"Neural dynamics and brain function","score":0.9972000122070312,"subfield":{"id":"https://openalex.org/subfields/2805","display_name":"Cognitive Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.9616725444793701},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.6232675909996033},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.5509049296379089},{"id":"https://openalex.org/keywords/memistor","display_name":"Memistor","score":0.5010812282562256},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.39002424478530884},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37785404920578003},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.34929317235946655},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.17616212368011475},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1361652910709381}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.9616725444793701},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.6232675909996033},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.5509049296379089},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.5010812282562256},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.39002424478530884},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37785404920578003},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.34929317235946655},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.17616212368011475},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1361652910709381}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2016.2525043","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2016.2525043","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2277871267","display_name":null,"funder_award_id":"14-19865S","funder_id":"https://openalex.org/F4320321006","funder_display_name":"Grantov\u00e1 Agentura \u010cesk\u00e9 Republiky"}],"funders":[{"id":"https://openalex.org/F4320321006","display_name":"Grantov\u00e1 Agentura \u010cesk\u00e9 Republiky","ror":"https://ror.org/01pv73b02"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1526681974","https://openalex.org/W1538225113","https://openalex.org/W1975229527","https://openalex.org/W1986273360","https://openalex.org/W2007898123","https://openalex.org/W2019061854","https://openalex.org/W2094814021","https://openalex.org/W2099553587","https://openalex.org/W2102879264","https://openalex.org/W2112181056","https://openalex.org/W2114307990","https://openalex.org/W2160068178","https://openalex.org/W2162651880","https://openalex.org/W2179896557","https://openalex.org/W2312610232","https://openalex.org/W2555106468","https://openalex.org/W2900178210","https://openalex.org/W4255059139"],"related_works":["https://openalex.org/W3170109256","https://openalex.org/W2185262500","https://openalex.org/W4251693286","https://openalex.org/W1543954628","https://openalex.org/W4385367273","https://openalex.org/W2797315502","https://openalex.org/W2163054919","https://openalex.org/W4283019775","https://openalex.org/W4252977987","https://openalex.org/W3173413269"],"abstract_inverted_index":{"This":[0,80],"work":[1],"presents":[2],"a":[3,11,51,156,237],"detailed":[4],"study":[5,36],"of":[6,10,31,37,54,74,92,95,111,125,127,162,181,192,216,239],"the":[7,32,38,42,55,71,75,90,96,108,112,117,123,128,146,151,163,174,178,190,193,213,217,222],"nonlinear":[8],"dynamics":[9,39,110,141],"tantalum":[12,56],"oxide":[13,57],"memristor":[14,76,129,152],"recently":[15],"fabricated":[16],"at":[17,189],"Hewlett":[18],"Packard":[19],"Labs.":[20],"Our":[21],"investigations":[22],"uncover":[23],"direct":[24],"current,":[25],"quasi-static,":[26],"and":[27,183],"alternating":[28],"current":[29],"behavior":[30,94,215],"nanodevice.":[33],"A":[34,131],"thorough":[35],"emerging":[40],"in":[41,86,177],"nanoscale":[43],"element":[44],"under":[45,77,168],"various":[46],"input/initial":[47],"condition":[48,66],"combinations":[49],"reveals":[50],"fundamental":[52],"property":[53],"device,":[58],"which":[59,121,187],"was":[60],"unnoticed":[61],"so":[62,227],"far.":[63],"The":[64,98],"initial":[65,164],"has":[67,236],"no":[68],"effect":[69],"on":[70,137,182],"steady-state":[72],"operation":[73],"non-zero":[78],"input.":[79],"property,":[81],"known":[82],"as":[83,228],"fading":[84,207],"memory":[85,101,208,242],"system":[87],"theory,":[88],"implies":[89],"uniqueness":[91],"asymptotic":[93],"memristor.":[97],"progressive":[99],"input-induced":[100],"erase":[102,196],"phenomenon":[103,209],"is":[104,173,188,199],"solely":[105],"determined":[106],"by":[107,116],"switching":[109,140,185],"nanodevice,":[113],"mathematically":[114],"described":[115],"state":[118,179],"evolution":[119,126],"function,":[120],"governs":[122],"rate":[124],"state.":[130],"constant-sign":[132],"DC":[133],"input":[134],"will":[135,153],"activate":[136],"or":[138,158],"off":[139,184],"only.":[142],"Consequently,":[143],"due":[144],"to":[145,201,229],"limited":[147],"on/off":[148],"memductance":[149],"ratio,":[150],"asymptotically":[154],"attain":[155],"fully-conducting":[157],"highly-resistive":[159],"state,":[160],"irrespective":[161],"condition.":[165],"Most":[166],"interestingly,":[167],"AC":[169],"periodic":[170],"excitations,":[171],"it":[172,234],"pronounced":[175],"asymmetry":[176],"dependence":[180],"processes":[186],"basis":[191],"reported":[194],"history":[195],"effect.":[197],"It":[198],"important":[200],"point":[202],"out":[203],"that":[204],"this":[205],"novel":[206],"does":[210],"not":[211],"compromise":[212],"nonvolatile":[214,241],"nanostructure.":[218],"In":[219],"fact,":[220],"despite":[221],"device":[223],"may":[224],"be":[225],"stimulated":[226],"forget":[230],"its":[231],"past":[232],"history,":[233],"still":[235],"continuum":[238],"analog":[240],"states.":[243]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":10},{"year":2023,"cited_by_count":9},{"year":2022,"cited_by_count":10},{"year":2021,"cited_by_count":6},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":7},{"year":2017,"cited_by_count":15},{"year":2016,"cited_by_count":4}],"updated_date":"2026-07-22T07:51:19.307946","created_date":"2025-10-10T00:00:00"}