{"id":"https://openalex.org/W1675518556","doi":"https://doi.org/10.1109/tcsi.2015.2471555","title":"A 0.7 V Relative Temperature Sensor With a Non-Calibrated &lt;formula formulatype=\"inline\"&gt;&lt;tex Notation=\"TeX\"&gt;$\\pm 1~^{\\circ}{\\rm C}$&lt;/tex&gt;&lt;/formula&gt; 3&lt;formula formulatype=\"inline\"&gt;&lt;tex Notation=\"TeX\"&gt;$\\sigma$&lt;/tex&gt;&lt;/formula&gt; Relative Inaccuracy","display_name":"A 0.7 V Relative Temperature Sensor With a Non-Calibrated &lt;formula formulatype=\"inline\"&gt;&lt;tex Notation=\"TeX\"&gt;$\\pm 1~^{\\circ}{\\rm C}$&lt;/tex&gt;&lt;/formula&gt; 3&lt;formula formulatype=\"inline\"&gt;&lt;tex Notation=\"TeX\"&gt;$\\sigma$&lt;/tex&gt;&lt;/formula&gt; Relative Inaccuracy","publication_year":2015,"publication_date":"2015-09-21","ids":{"openalex":"https://openalex.org/W1675518556","doi":"https://doi.org/10.1109/tcsi.2015.2471555","mag":"1675518556"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2015.2471555","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2015.2471555","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100606015","display_name":"Li Lu","orcid":"https://orcid.org/0000-0001-9636-3014"},"institutions":[{"id":"https://openalex.org/I12315562","display_name":"Texas Tech University","ror":"https://ror.org/0405mnx93","country_code":"US","type":"education","lineage":["https://openalex.org/I12315562"]},{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Li Lu","raw_affiliation_strings":["Qualcomm Technologies Inc., San Diego, CA, USA","Texas Tech University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Qualcomm Technologies Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]},{"raw_affiliation_string":"Texas Tech University","institution_ids":["https://openalex.org/I12315562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086039227","display_name":"Bozorgmehr Vosooghi","orcid":null},"institutions":[{"id":"https://openalex.org/I12315562","display_name":"Texas Tech University","ror":"https://ror.org/0405mnx93","country_code":"US","type":"education","lineage":["https://openalex.org/I12315562"]},{"id":"https://openalex.org/I44461941","display_name":"University of Houston","ror":"https://ror.org/048sx0r50","country_code":"US","type":"education","lineage":["https://openalex.org/I44461941"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bozorgmehr Vosooghi","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA","Texas Tech University"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Houston, Houston, TX, USA","institution_ids":["https://openalex.org/I44461941"]},{"raw_affiliation_string":"Texas Tech University","institution_ids":["https://openalex.org/I12315562"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100830016","display_name":"Liang Dai","orcid":"https://orcid.org/0009-0002-9402-5315"},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Liang Dai","raw_affiliation_strings":["Qualcomm Technologies Inc., San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Qualcomm Technologies Inc., San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5025738581","display_name":"Changzhi Li","orcid":"https://orcid.org/0000-0003-2188-4506"},"institutions":[{"id":"https://openalex.org/I12315562","display_name":"Texas Tech University","ror":"https://ror.org/0405mnx93","country_code":"US","type":"education","lineage":["https://openalex.org/I12315562"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Changzhi Li","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX, USA","institution_ids":["https://openalex.org/I12315562"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.5457,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.6700365,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"62","issue":"10","first_page":"2434","last_page":"2444"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.58323073387146},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5340481996536255},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.530161440372467},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.518010675907135},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5168669819831848},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4779491424560547},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.469959020614624},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.42944595217704773},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.4260503649711609},{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.42316538095474243},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3901805877685547},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3690490126609802},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.36240798234939575},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3327871263027191},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3302121162414551},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3142036199569702},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16981151700019836}],"concepts":[{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.58323073387146},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5340481996536255},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.530161440372467},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.518010675907135},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5168669819831848},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4779491424560547},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.469959020614624},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.42944595217704773},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.4260503649711609},{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.42316538095474243},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3901805877685547},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3690490126609802},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.36240798234939575},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3327871263027191},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3302121162414551},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3142036199569702},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16981151700019836}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2015.2471555","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2015.2471555","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7300000190734863}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W649290676","https://openalex.org/W1499201227","https://openalex.org/W1531446014","https://openalex.org/W1566916904","https://openalex.org/W1966656109","https://openalex.org/W1972624437","https://openalex.org/W1998284495","https://openalex.org/W1999158009","https://openalex.org/W2055944305","https://openalex.org/W2067658274","https://openalex.org/W2090351433","https://openalex.org/W2100884184","https://openalex.org/W2112611349","https://openalex.org/W2113683040","https://openalex.org/W2115647685","https://openalex.org/W2118389586","https://openalex.org/W2120598409","https://openalex.org/W2159719035","https://openalex.org/W2162875321","https://openalex.org/W2163297099","https://openalex.org/W2164546195","https://openalex.org/W2197404263","https://openalex.org/W2477448550","https://openalex.org/W2566193534","https://openalex.org/W4247586331"],"related_works":["https://openalex.org/W2010066109","https://openalex.org/W2791897932","https://openalex.org/W2009852498","https://openalex.org/W2166758606","https://openalex.org/W2545707786","https://openalex.org/W2340131852","https://openalex.org/W1999741645","https://openalex.org/W3004587385","https://openalex.org/W1991521745","https://openalex.org/W2109147260"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,17,59,78,206],"new":[4],"low-voltage":[5,45],"relative":[6,123,164],"temperature":[7,173,210],"sensor":[8,70,112],"for":[9,44,139,169,180],"multi-core":[10],"digital":[11],"processor":[12],"on-chip":[13,209],"thermal":[14,198],"management":[15],"in":[16],"180":[18],"nm":[19],"CMOS":[20],"process.":[21],"Three":[22],"types":[23],"of":[24,64,81,110,153],"sensing":[25,124,165],"diodes":[26,54],"including":[27,105],"Schottky":[28],"barrier":[29],"diode":[30,34,40],"(SBD),":[31],"subthreshold":[32,145,185],"MOSFET":[33,38],"and":[35,87,96,136,147,171,175,205],"dynamic":[36],"threshold":[37],"(DTMOS)":[39],"have":[41],"been":[42,202],"investigated":[43],"operation,":[46],"while":[47],"traditional":[48],"parasitic":[49],"PNP-bipolar":[50],"junction":[51],"transistor":[52],"(BJT)":[53],"are":[55,129,192],"implemented":[56,73],"to":[57,119],"provide":[58],"performance":[60],"reference.":[61],"A":[62],"matrix":[63],"7":[65,67],"\u00d7":[66],"small":[68],"remote":[69],"nodes":[71],"is":[72,113,158,167],"on":[74,143,184],"the":[75,89,106,111,140,151,154,159,176,181,196],"chip":[76],"with":[77,190],"deployment":[79],"density":[80],"49/0.81":[82],"mm":[83],"<sup":[84],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[85],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[86],"sharing":[88],"same":[90],"bias":[91],"current":[92],"generator,":[93],"control":[94,108],"logic,":[95],"data":[97],"converter.":[98],"The":[99,122,187],"measured":[100],"minimum":[101],"supply":[102],"voltage":[103],"(not":[104],"clock":[107],"block)":[109],"0.7":[114],"V":[115],"over":[116],"-55":[117],"\u00b0C":[118,135,138],"125":[120],"\u00b0C.":[121],"inaccuracies":[125,189],"(3\u03c3)":[126],"without":[127],"calibration":[128],"less":[130],"than":[131],"\u00b11.5":[132],"\u00b0C,":[133],"\u00b11.2":[134],"\u00b11":[137],"designs":[141],"based":[142,183],"SBD,":[144],"MOSFET,":[146],"DTMOS,":[148],"respectively.":[149],"To":[150],"best":[152,177],"authors'":[155],"knowledge,":[156],"this":[157],"first":[160],"time":[161],"that":[162],"non-calibrated":[163],"accuracy":[166],"reported":[168,178],"SBD-based":[170],"DTMOS-based":[172],"sensors,":[174],"result":[179],"design":[182],"MOSFET.":[186],"absolute":[188],"calibration-per-chip":[191],"also":[193],"presented.":[194],"Furthermore,":[195],"multi-location":[197],"monitoring":[199],"function":[200],"has":[201],"experimentally":[203],"demonstrated":[204],"1.8":[207],"\u00b0C/mm":[208],"gradient":[211],"was":[212],"detected.":[213]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}