{"id":"https://openalex.org/W1704181284","doi":"https://doi.org/10.1109/tcsi.2015.2415171","title":"Switching pMOS Sense Amplifier for High-Density Low-Voltage Single-Ended SRAM","display_name":"Switching pMOS Sense Amplifier for High-Density Low-Voltage Single-Ended SRAM","publication_year":2015,"publication_date":"2015-05-25","ids":{"openalex":"https://openalex.org/W1704181284","doi":"https://doi.org/10.1109/tcsi.2015.2415171","mag":"1704181284"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2015.2415171","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2015.2415171","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108522065","display_name":"Hanwool Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hanwool Jeong","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100745446","display_name":"Tae\u2010Won Kim","orcid":"https://orcid.org/0000-0002-0231-3727"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taewon Kim","raw_affiliation_strings":["Samsung Electronics, Semiconductor R&D Center, Gyeonggi-do, Korea","Semiconductor R&D Center, Samsung Electronics, Gyeonggi-Do, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Semiconductor R&D Center, Gyeonggi-do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031307642","display_name":"Kyoman Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kyoman Kang","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025919348","display_name":"Taejoong Song","orcid":"https://orcid.org/0000-0003-2752-3138"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taejoong Song","raw_affiliation_strings":["S.SLI Division, Samsung Electronics, Gyeonggi-do, Korea"],"affiliations":[{"raw_affiliation_string":"S.SLI Division, Samsung Electronics, Gyeonggi-do, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055688853","display_name":"Gyuhong Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyuhong Kim","raw_affiliation_strings":["S.SLI Division, Samsung Electronics, Gyeonggi-do, Korea"],"affiliations":[{"raw_affiliation_string":"S.SLI Division, Samsung Electronics, Gyeonggi-do, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067575589","display_name":"Hyo-Sig Won","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyo-sig Won","raw_affiliation_strings":["S.SLI Division, Samsung Electronics, Gyeonggi-do, Korea"],"affiliations":[{"raw_affiliation_string":"S.SLI Division, Samsung Electronics, Gyeonggi-do, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5108522065"],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":null,"apc_paid":null,"fwci":0.9864,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.785157,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":"62","issue":"6","first_page":"1555","last_page":"1563"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.9052842855453491},{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.7398941516876221},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.5834391117095947},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5197834372520447},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4951993525028229},{"id":"https://openalex.org/keywords/sense","display_name":"Sense (electronics)","score":0.467424601316452},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.45580554008483887},{"id":"https://openalex.org/keywords/overhead","display_name":"Overhead (engineering)","score":0.44155943393707275},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4097553491592407},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.38564983010292053},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2679806351661682},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.1764187514781952}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.9052842855453491},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.7398941516876221},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.5834391117095947},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5197834372520447},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4951993525028229},{"id":"https://openalex.org/C143141573","wikidata":"https://www.wikidata.org/wiki/Q7450971","display_name":"Sense (electronics)","level":2,"score":0.467424601316452},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.45580554008483887},{"id":"https://openalex.org/C2779960059","wikidata":"https://www.wikidata.org/wiki/Q7113681","display_name":"Overhead (engineering)","level":2,"score":0.44155943393707275},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4097553491592407},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38564983010292053},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2679806351661682},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.1764187514781952}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2015.2415171","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2015.2415171","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.9100000262260437,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1966939297","https://openalex.org/W1968464410","https://openalex.org/W1990823448","https://openalex.org/W2000410358","https://openalex.org/W2042127708","https://openalex.org/W2060385046","https://openalex.org/W2067392247","https://openalex.org/W2083981845","https://openalex.org/W2099087448","https://openalex.org/W2099231065","https://openalex.org/W2101575856","https://openalex.org/W2105175332","https://openalex.org/W2126770830","https://openalex.org/W2144289559","https://openalex.org/W2148104441","https://openalex.org/W3143732588","https://openalex.org/W4293209532","https://openalex.org/W6642065836","https://openalex.org/W6842453206"],"related_works":["https://openalex.org/W2261845001","https://openalex.org/W2896189158","https://openalex.org/W2808199063","https://openalex.org/W2114190567","https://openalex.org/W2186843201","https://openalex.org/W115468419","https://openalex.org/W2097950345","https://openalex.org/W2115497459","https://openalex.org/W2400787628","https://openalex.org/W2761259789"],"abstract_inverted_index":{"A":[0,37],"switching":[1],"pMOS":[2,19,61,118],"sense":[3,62,66,119],"amplifier":[4,63,67],"(SPSA)":[5],"is":[6,29,35,43,54,72,83,96,143,157],"proposed":[7],"for":[8,21],"high-speed":[9],"single-ended":[10],"static":[11],"RAM":[12],"sensing.":[13],"By":[14],"using":[15],"the":[16,25,27,32,58,69,80,91,94,105,108,121,138,141,149],"same":[17],"pull-up":[18],"transistor":[20],"sensing":[22,70],"and":[23,31,46,64,76,79,87],"precharging":[24],"bit-line,":[26],"performance":[28,139],"enhanced,":[30],"power":[33,81],"consumption":[34,82],"reduced.":[36],"keeper":[38],"that":[39,103,147,156],"compensates":[40],"bit-line":[41,135],"leakage":[42],"also":[44],"employed,":[45],"a":[47,111,116,129,154],"minimum":[48],"operating":[49],"voltage":[50],"of":[51,93,104,132,140,148],"0.51":[52],"V":[53],"obtained.":[55],"Compared":[56],"to":[57,98],"previous":[59],"dynamic":[60,117,150],"AC-coupled":[65],"(ACSA),":[68],"time":[71],"improved":[73],"by":[74,85,127],"55%":[75],"10%,":[77],"respectively,":[78],"reduced":[84],"12%":[86],"44%,":[88],"respectively.":[89],"Furthermore,":[90],"area":[92,114,122],"SPSA":[95,109,142],"estimated":[97],"be":[99,125],"43%":[100],"smaller":[101],"than":[102,115,146],"ACSA.":[106],"Although":[107],"has":[110],"59%":[112],"larger":[113,130],"amplifier,":[120],"overhead":[123],"can":[124],"mitigated":[126],"allocating":[128],"number":[131],"cells":[133],"per":[134],"(CpBL)":[136],"because":[137],"still":[144],"better":[145],"pMOS,":[151],"even":[152],"with":[153],"CpBL":[155],"two":[158],"times":[159],"larger.":[160]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}