{"id":"https://openalex.org/W2029712422","doi":"https://doi.org/10.1109/tcsi.2015.2388837","title":"Offset-Compensated Cross-Coupled PFET Bit-Line Conditioning and Selective Negative Bit-Line Write Assist for High-Density Low-Power SRAM","display_name":"Offset-Compensated Cross-Coupled PFET Bit-Line Conditioning and Selective Negative Bit-Line Write Assist for High-Density Low-Power SRAM","publication_year":2015,"publication_date":"2015-01-01","ids":{"openalex":"https://openalex.org/W2029712422","doi":"https://doi.org/10.1109/tcsi.2015.2388837","mag":"2029712422"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2015.2388837","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2015.2388837","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108522065","display_name":"Hanwool Jeong","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Hanwool Jeong","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100745450","display_name":"Tae-Won Kim","orcid":"https://orcid.org/0000-0003-1023-5826"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taewon Kim","raw_affiliation_strings":["Samsung Electronics, Semiconductor R&D Center, Gyeonggi-do, Korea","Semiconductor R&D Center, Samsung Electronics, Gyeonggi-Do, Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics, Semiconductor R&D Center, Gyeonggi-do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics, Gyeonggi-Do, Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109509787","display_name":"Younghwi Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Younghwi Yang","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025919348","display_name":"Taejoong Song","orcid":"https://orcid.org/0000-0003-2752-3138"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Taejoong Song","raw_affiliation_strings":["S.LSI Division, Samsung Electronics, Gyeonggi-do, Korea","[S. LSI Division, Samsung Electronics, Gyeonggi-do, Korea]"],"affiliations":[{"raw_affiliation_string":"S.LSI Division, Samsung Electronics, Gyeonggi-do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[S. LSI Division, Samsung Electronics, Gyeonggi-do, Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055688853","display_name":"Gyuhong Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gyuhong Kim","raw_affiliation_strings":["S.LSI Division, Samsung Electronics, Gyeonggi-do, Korea","[S. LSI Division, Samsung Electronics, Gyeonggi-do, Korea]"],"affiliations":[{"raw_affiliation_string":"S.LSI Division, Samsung Electronics, Gyeonggi-do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[S. LSI Division, Samsung Electronics, Gyeonggi-do, Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067575589","display_name":"Hyo-Sig Won","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyo-sig Won","raw_affiliation_strings":["S.LSI Division, Samsung Electronics, Gyeonggi-do, Korea","[S. LSI Division, Samsung Electronics, Gyeonggi-do, Korea]"],"affiliations":[{"raw_affiliation_string":"S.LSI Division, Samsung Electronics, Gyeonggi-do, Korea","institution_ids":["https://openalex.org/I2250650973"]},{"raw_affiliation_string":"[S. LSI Division, Samsung Electronics, Gyeonggi-do, Korea]","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea","institution_ids":["https://openalex.org/I193775966"]},{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University , Seoul , Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5108522065"],"corresponding_institution_ids":["https://openalex.org/I193775966"],"apc_list":null,"apc_paid":null,"fwci":1.9729,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.87575962,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"9"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7934002876281738},{"id":"https://openalex.org/keywords/offset","display_name":"Offset (computer science)","score":0.6868598461151123},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5626428723335266},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.5117208957672119},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4871060848236084},{"id":"https://openalex.org/keywords/line","display_name":"Line (geometry)","score":0.4388112723827362},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3973613977432251},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3592175245285034},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3353070616722107},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.23207131028175354},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.22821864485740662},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17362743616104126},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.07326620817184448}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7934002876281738},{"id":"https://openalex.org/C175291020","wikidata":"https://www.wikidata.org/wiki/Q1156822","display_name":"Offset (computer science)","level":2,"score":0.6868598461151123},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5626428723335266},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.5117208957672119},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4871060848236084},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.4388112723827362},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3973613977432251},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3592175245285034},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3353070616722107},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.23207131028175354},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.22821864485740662},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17362743616104126},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.07326620817184448},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2015.2388837","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2015.2388837","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.9100000262260437}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":34,"referenced_works":["https://openalex.org/W1970598944","https://openalex.org/W1983683378","https://openalex.org/W1995329733","https://openalex.org/W1997140745","https://openalex.org/W1998798369","https://openalex.org/W2000675952","https://openalex.org/W2002612140","https://openalex.org/W2008362573","https://openalex.org/W2031948068","https://openalex.org/W2046515116","https://openalex.org/W2053448087","https://openalex.org/W2071159343","https://openalex.org/W2091595381","https://openalex.org/W2109104675","https://openalex.org/W2113613740","https://openalex.org/W2115638507","https://openalex.org/W2124748568","https://openalex.org/W2127190809","https://openalex.org/W2150938923","https://openalex.org/W2151481736","https://openalex.org/W2159859876","https://openalex.org/W2160367182","https://openalex.org/W2162517322","https://openalex.org/W2171922263","https://openalex.org/W2172173999","https://openalex.org/W2545471485","https://openalex.org/W2788433071","https://openalex.org/W3151880060","https://openalex.org/W6641117450","https://openalex.org/W6650575476","https://openalex.org/W6673615964","https://openalex.org/W6677374692","https://openalex.org/W6683783425","https://openalex.org/W6748134440"],"related_works":["https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W4293253840","https://openalex.org/W4378977321","https://openalex.org/W1976168335","https://openalex.org/W4308090481","https://openalex.org/W3211992815","https://openalex.org/W2314025563"],"abstract_inverted_index":{"An":[0],"offset-compensated":[1],"cross-coupled":[2,79,95],"PFET":[3],"bit-line":[4],"(BL)":[5],"conditioning":[6],"circuit":[7,15,52,61],"(OC-CPBC)":[8],"and":[9,30,56,110,127,134,141],"a":[10,63,100,105,147],"selective":[11,112],"negative":[12,32,58],"BL":[13,33,59,71],"write-assist":[14,34,60],"(SNBL-WA)":[16],"are":[17,130],"proposed":[18],"for":[19,39],"high-density":[20,44],"FinFET":[21,45],"static":[22],"RAM":[23],"(SRAM).":[24],"The":[25,68,97,120],"word-line":[26],"(WL)":[27],"underdrive":[28,50],"read-assist":[29,51],"the":[31,40,48,54,57,74,89,116,125,139],"circuits":[35],"should":[36],"be":[37],"used":[38],"stable":[41],"operation":[42],"of":[43,66,88],"SRAM.":[46],"However,":[47],"WL":[49],"degrades":[53],"performance,":[55],"consumes":[62],"large":[64],"amount":[65],"energy.":[67],"OC-CPBC":[69,140],"enhances":[70],"development":[72],"during":[73],"evaluation":[75],"phase":[76],"by":[77,85,132,137],"applying":[78,138],"PFETs":[80],"whose":[81],"offset":[82],"is":[83,108],"compensated":[84],"precharging":[86],"each":[87],"two":[90],"BLs":[91],"separately":[92],"through":[93],"diode-connected":[94],"PFETs.":[96],"SNBL-WA":[98,142],"performs":[99],"write":[101,106,113,117],"assist":[102,114],"only":[103],"when":[104],"failure":[107],"detected,":[109],"this":[111],"reduces":[115],"energy":[118,128],"consumption.":[119],"simulation":[121],"results":[122],"show":[123],"that":[124],"performance":[126],"consumption":[129],"improved":[131],"41%":[133],"48%,":[135],"respectively,":[136],"to":[143],"SRAM,":[144],"even":[145],"with":[146],"decrease":[148],"in":[149],"area.":[150]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":5},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}