{"id":"https://openalex.org/W2108599338","doi":"https://doi.org/10.1109/tcsi.2014.2304661","title":"Novel Low-Leakage and High-Speed Triple-Threshold-Voltage Buffers With Skewed Inputs and Outputs","display_name":"Novel Low-Leakage and High-Speed Triple-Threshold-Voltage Buffers With Skewed Inputs and Outputs","publication_year":2014,"publication_date":"2014-06-24","ids":{"openalex":"https://openalex.org/W2108599338","doi":"https://doi.org/10.1109/tcsi.2014.2304661","mag":"2108599338"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2014.2304661","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2014.2304661","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101564932","display_name":"Hong Zhu","orcid":"https://orcid.org/0000-0002-8952-9204"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":true,"raw_author_name":"Hong Zhu","raw_affiliation_strings":["Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong","Hong Kong Univ. of Sci. & Technol., Kowloon, China#TAB#"],"affiliations":[{"raw_affiliation_string":"Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong","institution_ids":["https://openalex.org/I200769079"]},{"raw_affiliation_string":"Hong Kong Univ. of Sci. & Technol., Kowloon, China#TAB#","institution_ids":["https://openalex.org/I200769079"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042147600","display_name":"Volkan Kursun","orcid":"https://orcid.org/0000-0002-8050-1774"},"institutions":[{"id":"https://openalex.org/I200769079","display_name":"Hong Kong University of Science and Technology","ror":"https://ror.org/00q4vv597","country_code":"HK","type":"education","lineage":["https://openalex.org/I200769079"]}],"countries":["HK"],"is_corresponding":false,"raw_author_name":"Volkan Kursun","raw_affiliation_strings":["Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong","Hong Kong Univ. of Sci. & Technol., Kowloon, China#TAB#"],"affiliations":[{"raw_affiliation_string":"Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong","institution_ids":["https://openalex.org/I200769079"]},{"raw_affiliation_string":"Hong Kong Univ. of Sci. & Technol., Kowloon, China#TAB#","institution_ids":["https://openalex.org/I200769079"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101564932"],"corresponding_institution_ids":["https://openalex.org/I200769079"],"apc_list":null,"apc_paid":null,"fwci":0.8373,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.78077906,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"61","issue":"7","first_page":"2013","last_page":"2021"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7413147687911987},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.6878341436386108},{"id":"https://openalex.org/keywords/leakage-power","display_name":"Leakage power","score":0.6399369239807129},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.6334429979324341},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.5811173915863037},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5647010207176208},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.5011451244354248},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.49412134289741516},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4767816364765167},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.467792809009552},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.464493066072464},{"id":"https://openalex.org/keywords/propagation-delay","display_name":"Propagation delay","score":0.42168158292770386},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41035333275794983},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.2960570454597473},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23959249258041382},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.15952545404434204},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13700446486473083}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7413147687911987},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.6878341436386108},{"id":"https://openalex.org/C2987719587","wikidata":"https://www.wikidata.org/wiki/Q1811428","display_name":"Leakage power","level":4,"score":0.6399369239807129},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.6334429979324341},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.5811173915863037},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5647010207176208},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.5011451244354248},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.49412134289741516},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4767816364765167},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.467792809009552},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.464493066072464},{"id":"https://openalex.org/C90806461","wikidata":"https://www.wikidata.org/wiki/Q1144416","display_name":"Propagation delay","level":2,"score":0.42168158292770386},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41035333275794983},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.2960570454597473},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23959249258041382},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15952545404434204},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13700446486473083},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2014.2304661","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2014.2304661","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1528060447","https://openalex.org/W1574542534","https://openalex.org/W2078153138","https://openalex.org/W2083606265","https://openalex.org/W2141041201","https://openalex.org/W2156269162","https://openalex.org/W2162241613","https://openalex.org/W2496254462","https://openalex.org/W3142526730"],"related_works":["https://openalex.org/W2368585244","https://openalex.org/W2347707557","https://openalex.org/W2039755656","https://openalex.org/W1949737515","https://openalex.org/W4253620068","https://openalex.org/W2042352336","https://openalex.org/W2144417859","https://openalex.org/W2147835582","https://openalex.org/W4240087758","https://openalex.org/W2187574435"],"abstract_inverted_index":{"Switching":[0],"speed,":[1],"active":[2],"power":[3],"consumption,":[4],"standby":[5,56],"leakage":[6,57],"current,":[7],"and":[8,25,33,52,59],"silicon":[9],"area":[10],"are":[11],"major":[12],"concerns":[13],"in":[14,37,55,78],"buffer":[15,35],"design.":[16],"A":[17],"new":[18,45],"Skewed-IO":[19,46],"cell":[20],"with":[21,43],"two":[22,26],"split":[23,27],"inputs":[24],"outputs":[28],"is":[29],"proposed":[30],"for":[31],"low-leakage":[32],"high-speed":[34],"design":[36],"this":[38],"paper.":[39],"The":[40],"triple-threshold-voltage":[41],"buffers":[42,72],"the":[44,66],"cells":[47],"offer":[48],"up":[49],"to":[50,65],"68.3%":[51],"13.2%":[53],"reduction":[54],"currents":[58],"propagation":[60],"delay,":[61],"respectively,":[62],"as":[63],"compared":[64],"conventional":[67],"static":[68],"CMOS":[69,83],"inverter":[70],"based":[71],"under":[73],"identical":[74],"load":[75],"capacitance":[76],"conditions":[77],"a":[79],"TSMC":[80],"65":[81],"nm":[82],"technology.":[84]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":3},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}