{"id":"https://openalex.org/W1979543683","doi":"https://doi.org/10.1109/tcsi.2013.2244320","title":"Composite Behavior of Multiple Memristor Circuits","display_name":"Composite Behavior of Multiple Memristor Circuits","publication_year":2013,"publication_date":"2013-04-08","ids":{"openalex":"https://openalex.org/W1979543683","doi":"https://doi.org/10.1109/tcsi.2013.2244320","mag":"1979543683"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2013.2244320","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2013.2244320","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5073627299","display_name":"Ram Kaji Budhathoki","orcid":"https://orcid.org/0000-0002-7716-9897"},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Ram Kaji Budhathoki","raw_affiliation_strings":["Division of Electronics Engineering, Chonbuk National University, Jeonju, Republic of Korea","Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea"],"affiliations":[{"raw_affiliation_string":"Division of Electronics Engineering, Chonbuk National University, Jeonju, Republic of Korea","institution_ids":["https://openalex.org/I80611190"]},{"raw_affiliation_string":"Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064732053","display_name":"Maheshwar Pd. Sah","orcid":"https://orcid.org/0009-0003-9540-8956"},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Maheshwar Pd. Sah","raw_affiliation_strings":["Division of Electronics Engineering, Chonbuk National University, Jeonju, Republic of Korea","Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea"],"affiliations":[{"raw_affiliation_string":"Division of Electronics Engineering, Chonbuk National University, Jeonju, Republic of Korea","institution_ids":["https://openalex.org/I80611190"]},{"raw_affiliation_string":"Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5053240573","display_name":"Shyam Prasad Adhikari","orcid":"https://orcid.org/0000-0002-8531-4599"},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Shyam Prasad Adhikari","raw_affiliation_strings":["Division of Electronics Engineering, Chonbuk National University, Jeonju, Republic of Korea","Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea"],"affiliations":[{"raw_affiliation_string":"Division of Electronics Engineering, Chonbuk National University, Jeonju, Republic of Korea","institution_ids":["https://openalex.org/I80611190"]},{"raw_affiliation_string":"Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013502609","display_name":"Hyongsuk Kim","orcid":"https://orcid.org/0000-0002-3321-5695"},"institutions":[{"id":"https://openalex.org/I80611190","display_name":"Jeonbuk National University","ror":"https://ror.org/05q92br09","country_code":"KR","type":"education","lineage":["https://openalex.org/I80611190"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hyongsuk Kim","raw_affiliation_strings":["Division of Electronics Engineering, Chonbuk National University, Jeonju, Republic of Korea","Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea"],"affiliations":[{"raw_affiliation_string":"Division of Electronics Engineering, Chonbuk National University, Jeonju, Republic of Korea","institution_ids":["https://openalex.org/I80611190"]},{"raw_affiliation_string":"Div. of Electron. Eng., Chonbuk Nat. Univ., Jeonju, South Korea","institution_ids":["https://openalex.org/I80611190"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5090657067","display_name":"Leon O. Chua","orcid":"https://orcid.org/0000-0002-1652-5464"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Leon Chua","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","Dept. of Electr. Eng. & Comput. Sci., Univ. of California-Berkeley, Berkeley, CA, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]},{"raw_affiliation_string":"Dept. of Electr. Eng. & Comput. Sci., Univ. of California-Berkeley, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5073627299"],"corresponding_institution_ids":["https://openalex.org/I80611190"],"apc_list":null,"apc_paid":null,"fwci":6.745,"has_fulltext":false,"cited_by_count":73,"citation_normalized_percentile":{"value":0.97072952,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"60","issue":"10","first_page":"2688","last_page":"2700"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}},{"id":"https://openalex.org/T10581","display_name":"Neural dynamics and brain function","score":0.9962999820709229,"subfield":{"id":"https://openalex.org/subfields/2805","display_name":"Cognitive Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.9926928281784058},{"id":"https://openalex.org/keywords/memistor","display_name":"Memistor","score":0.8636201620101929},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.6520012617111206},{"id":"https://openalex.org/keywords/composite-number","display_name":"Composite number","score":0.6173513531684875},{"id":"https://openalex.org/keywords/polarity","display_name":"Polarity (international relations)","score":0.6135981678962708},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.528715193271637},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4681808054447174},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.40725812315940857},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3818933367729187},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.36141932010650635},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3345414698123932},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3269464075565338},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.28061696887016296},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23590731620788574},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20225369930267334},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.15799295902252197}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.9926928281784058},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.8636201620101929},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.6520012617111206},{"id":"https://openalex.org/C104779481","wikidata":"https://www.wikidata.org/wiki/Q50707","display_name":"Composite number","level":2,"score":0.6173513531684875},{"id":"https://openalex.org/C2777361361","wikidata":"https://www.wikidata.org/wiki/Q1112585","display_name":"Polarity (international relations)","level":3,"score":0.6135981678962708},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.528715193271637},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4681808054447174},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.40725812315940857},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3818933367729187},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36141932010650635},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3345414698123932},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3269464075565338},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.28061696887016296},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23590731620788574},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20225369930267334},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.15799295902252197},{"id":"https://openalex.org/C54355233","wikidata":"https://www.wikidata.org/wiki/Q7162","display_name":"Genetics","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C1491633281","wikidata":"https://www.wikidata.org/wiki/Q7868","display_name":"Cell","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2013.2244320","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2013.2244320","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1620265503","https://openalex.org/W1970974872","https://openalex.org/W1990306796","https://openalex.org/W1991954937","https://openalex.org/W1998385236","https://openalex.org/W2018645548","https://openalex.org/W2042330780","https://openalex.org/W2043782913","https://openalex.org/W2045009304","https://openalex.org/W2047874715","https://openalex.org/W2063357061","https://openalex.org/W2064756415","https://openalex.org/W2112181056","https://openalex.org/W2113899638","https://openalex.org/W2141071915","https://openalex.org/W2153690880","https://openalex.org/W2162651880","https://openalex.org/W2163105747","https://openalex.org/W2603064927","https://openalex.org/W2988882408","https://openalex.org/W3106114372","https://openalex.org/W6636407534","https://openalex.org/W6736339276"],"related_works":["https://openalex.org/W3170109256","https://openalex.org/W2185262500","https://openalex.org/W4251693286","https://openalex.org/W1543954628","https://openalex.org/W4385367273","https://openalex.org/W2780290013","https://openalex.org/W2797315502","https://openalex.org/W2163054919","https://openalex.org/W4252977987","https://openalex.org/W3216217287"],"abstract_inverted_index":{"Composite":[0],"characteristics":[1,30,96],"of":[2,8,16,47,67,82,97],"the":[3,17,44,48,59,65,75,95],"parallel":[4],"and":[5,52,80,89,93],"serial":[6],"connections":[7],"memristors":[9,38],"are":[10,31,39],"investigated.":[11],"The":[12],"memristor":[13,91,99],"is":[14,53],"one":[15],"fundamental":[18],"electrical":[19,29],"elements,":[20],"which":[21],"has":[22],"recently":[23],"been":[24],"successfully":[25],"built.":[26],"However,":[27],"its":[28],"not":[32],"yet":[33],"fully":[34],"understood.":[35],"When":[36],"multiple":[37],"connected":[40],"to":[41,55,58],"each":[42],"other,":[43],"composite":[45,84],"behavior":[46],"devices":[49],"becomes":[50],"complicated":[51],"difficult":[54],"predict,":[56],"due":[57],"polarity":[60],"dependent":[61],"nonlinear":[62,90],"variation":[63],"in":[64],"memristance":[66,81],"individual":[68],"memristors.":[69],"In":[70],"this":[71],"work,":[72],"we":[73],"investigate":[74],"relationships":[76],"among":[77],"flux,":[78],"charge,":[79],"diverse":[83],"memristors,":[85],"using":[86],"both":[87],"linear":[88],"models,":[92],"analyze":[94],"complex":[98],"circuits.":[100]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":4},{"year":2019,"cited_by_count":9},{"year":2018,"cited_by_count":8},{"year":2017,"cited_by_count":7},{"year":2016,"cited_by_count":7},{"year":2015,"cited_by_count":11},{"year":2014,"cited_by_count":9},{"year":2013,"cited_by_count":1}],"updated_date":"2026-04-01T17:29:45.350535","created_date":"2025-10-10T00:00:00"}
