{"id":"https://openalex.org/W2125951726","doi":"https://doi.org/10.1109/tcsi.2010.2071470","title":"Nonclassical Channel Design in MOSFETs for Improving OTA Gain-Bandwidth Trade-Off","display_name":"Nonclassical Channel Design in MOSFETs for Improving OTA Gain-Bandwidth Trade-Off","publication_year":2010,"publication_date":"2010-11-10","ids":{"openalex":"https://openalex.org/W2125951726","doi":"https://doi.org/10.1109/tcsi.2010.2071470","mag":"2125951726"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2010.2071470","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2010.2071470","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083705105","display_name":"Abhinav Kranti","orcid":"https://orcid.org/0000-0003-1760-3409"},"institutions":[{"id":"https://openalex.org/I126231945","display_name":"Queen's University Belfast","ror":"https://ror.org/00hswnk62","country_code":"GB","type":"education","lineage":["https://openalex.org/I126231945"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"Abhinav Kranti","raw_affiliation_strings":["Semiconductors and Nanotechnology Group, School of Electronics, Electrical Engineering and Computer Sciences, Queen''s University Belfast, Belfast, UK","Semicond. & Nanotechnol. Group, Queen's Univ. Belfast, Belfast, UK"],"affiliations":[{"raw_affiliation_string":"Semiconductors and Nanotechnology Group, School of Electronics, Electrical Engineering and Computer Sciences, Queen''s University Belfast, Belfast, UK","institution_ids":["https://openalex.org/I126231945"]},{"raw_affiliation_string":"Semicond. & Nanotechnol. Group, Queen's Univ. Belfast, Belfast, UK","institution_ids":["https://openalex.org/I126231945"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112035668","display_name":"G.A. Armstrong","orcid":null},"institutions":[{"id":"https://openalex.org/I126231945","display_name":"Queen's University Belfast","ror":"https://ror.org/00hswnk62","country_code":"GB","type":"education","lineage":["https://openalex.org/I126231945"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"G. Alastair Armstrong","raw_affiliation_strings":["Semiconductors and Nanotechnology Group, School of Electronics, Electrical Engineering and Computer Sciences, Queen''s University Belfast, Belfast, UK","Semicond. & Nanotechnol. Group, Queen's Univ. Belfast, Belfast, UK"],"affiliations":[{"raw_affiliation_string":"Semiconductors and Nanotechnology Group, School of Electronics, Electrical Engineering and Computer Sciences, Queen''s University Belfast, Belfast, UK","institution_ids":["https://openalex.org/I126231945"]},{"raw_affiliation_string":"Semicond. & Nanotechnol. Group, Queen's Univ. Belfast, Belfast, UK","institution_ids":["https://openalex.org/I126231945"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5083705105"],"corresponding_institution_ids":["https://openalex.org/I126231945"],"apc_list":null,"apc_paid":null,"fwci":2.3514,"has_fulltext":false,"cited_by_count":35,"citation_normalized_percentile":{"value":0.89429695,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":"57","issue":"12","first_page":"3048","last_page":"3054"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.7428709864616394},{"id":"https://openalex.org/keywords/cutoff","display_name":"Cutoff","score":0.523701548576355},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.517342746257782},{"id":"https://openalex.org/keywords/cutoff-frequency","display_name":"Cutoff frequency","score":0.5027878284454346},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.4631791412830353},{"id":"https://openalex.org/keywords/channel","display_name":"Channel (broadcasting)","score":0.4530279040336609},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.44640421867370605},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3884247839450836},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.37099286913871765},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34308314323425293},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.3015546500682831},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.23808899521827698},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.22167667746543884},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16090211272239685},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.14471417665481567},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.11237147450447083}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.7428709864616394},{"id":"https://openalex.org/C2778217198","wikidata":"https://www.wikidata.org/wiki/Q556977","display_name":"Cutoff","level":2,"score":0.523701548576355},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.517342746257782},{"id":"https://openalex.org/C6142545","wikidata":"https://www.wikidata.org/wiki/Q1455881","display_name":"Cutoff frequency","level":2,"score":0.5027878284454346},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.4631791412830353},{"id":"https://openalex.org/C127162648","wikidata":"https://www.wikidata.org/wiki/Q16858953","display_name":"Channel (broadcasting)","level":2,"score":0.4530279040336609},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.44640421867370605},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3884247839450836},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.37099286913871765},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34308314323425293},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3015546500682831},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.23808899521827698},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.22167667746543884},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16090211272239685},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.14471417665481567},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.11237147450447083}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/tcsi.2010.2071470","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2010.2071470","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},{"id":"pmh:oai:pure.qub.ac.uk/portal:publications/091a20f6-9b43-42fe-82ac-dc2af746808d","is_oa":false,"landing_page_url":"https://pure.qub.ac.uk/en/publications/091a20f6-9b43-42fe-82ac-dc2af746808d","pdf_url":null,"source":{"id":"https://openalex.org/S4306402319","display_name":"Research Portal (Queen's University Belfast)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I126231945","host_organization_name":"Queen's University Belfast","host_organization_lineage":["https://openalex.org/I126231945"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Kranti , A &amp; Armstrong , A 2010 , ' Nonclassical channel design in MOSFETs for improving OTA gain-bandwidth trade-off ' , IEEE Transactions on Circuits and Systems I: Regular Papers , vol. 57 , no. 12 , pp. 3048-3057 . https://doi.org/10.1109/TCSI.2010.2071470","raw_type":"article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure","score":0.46000000834465027}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1495378177","https://openalex.org/W1522817321","https://openalex.org/W1590842594","https://openalex.org/W1988053368","https://openalex.org/W1991474688","https://openalex.org/W2002966494","https://openalex.org/W2004012148","https://openalex.org/W2011064247","https://openalex.org/W2017641676","https://openalex.org/W2040340176","https://openalex.org/W2084888978","https://openalex.org/W2089044683","https://openalex.org/W2100805199","https://openalex.org/W2108519226","https://openalex.org/W2113766915","https://openalex.org/W2115153819","https://openalex.org/W2122965295","https://openalex.org/W2127485912","https://openalex.org/W2133644852","https://openalex.org/W2137121460","https://openalex.org/W2140923780","https://openalex.org/W2143100123","https://openalex.org/W2145474418","https://openalex.org/W2163285657","https://openalex.org/W2540536195","https://openalex.org/W4229941912"],"related_works":["https://openalex.org/W3201586688","https://openalex.org/W3048460592","https://openalex.org/W2105642078","https://openalex.org/W2058293790","https://openalex.org/W2376699055","https://openalex.org/W2009993245","https://openalex.org/W2372537705","https://openalex.org/W2131689943","https://openalex.org/W2322850616","https://openalex.org/W2243206285"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"gain-bandwidth":[3],"(GB)":[4],"trade-off":[5,44],"associated":[6,45],"with":[7,46,53,76,94,120,168,213],"analog":[8,47,106],"device/circuit":[9],"design":[10,100,141,212],"due":[11],"to":[12,92,125],"conflicting":[13],"requirements":[14],"for":[15,104,116,205],"enhancing":[16],"gain":[17,66],"and":[18,113,179],"cutoff":[19,80],"frequency":[20,81],"is":[21,24,114,159],"examined.":[22],"It":[23],"demonstrated":[25],"that":[26,164],"the":[27,42,109,155],"use":[28],"of":[29,129,144,150,157,177,193],"a":[30,102,182],"nonclassical":[31],"source/drain":[32],"(S/D)":[33],"profile":[34],"(also":[35],"known":[36],"as":[37,90],"underlap":[38,56,130,165,214],"channel)":[39],"can":[40],"alleviate":[41],"GB":[43,145],"design.":[48],"Operational":[49],"transconductance":[50],"amplifier":[51],"(OTA)":[52],"60":[54],"nm":[55,111],"S/D":[57,97],"MOSFETs":[58,216],"achieve":[59],"15":[60],"dB":[61],"higher":[62,79],"open":[63],"loop":[64],"voltage":[65],"(":[67,82,170,185],"<i":[68,83,171,186],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[69,72,84,87,172,187,190],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">A</i>":[70],"<sub":[71,86,189],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">VO_OTA</sub>":[73],")":[74,89,192],"along":[75],"three":[77],"times":[78],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">f</i>":[85],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T_OTA</sub>":[88],"compared":[91],"OTA":[93,158,211],"classical":[95],"nonunderlap":[96],"regions.":[98],"Underlap":[99],"provides":[101,202],"methodology":[103],"scaling":[105],"devices":[107],"into":[108],"sub-100":[110],"regime":[112],"advantageous":[115],"high":[117],"temperature":[118],"applications":[119],"OTA,":[121],"preserving":[122],"functionality":[123],"up":[124],"540":[126],"K.":[127],"Advantages":[128],"architecture":[131],"over":[132],"graded":[133],"channel":[134,139],"(GC)":[135],"or":[136],"laterally":[137],"asymmetric":[138],"(LAC)":[140],"in":[142,217],"terms":[143],"behavior":[146],"are":[147],"demonstrated.":[148],"Impact":[149],"transistor":[151],"structural":[152],"parameters":[153],"on":[154],"performance":[156],"also":[160],"analyzed.":[161],"Results":[162],"show":[163],"OTAs":[166],"designed":[167],"spacer-to-straggle":[169],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">s</i>":[173],"/":[174],"\u03c3)":[175],"ratio":[176],"3.2":[178],"operated":[180],"below":[181],"bias":[183],"current":[184],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">I</i>":[188],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">BIAS</sub>":[191],"80":[194],"\u03bcA":[195],"demonstrate":[196],"optimum":[197],"performance.":[198],"The":[199],"present":[200],"work":[201],"new":[203],"opportunities":[204],"realizing":[206],"future":[207],"ultra":[208],"wide":[209],"band":[210],"DG":[215],"silicon-on-insulator":[218],"(SOI)":[219],"technology.":[220]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":2},{"year":2016,"cited_by_count":3},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":4},{"year":2012,"cited_by_count":2}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}