{"id":"https://openalex.org/W4415445235","doi":"https://doi.org/10.1109/tcad.2025.3624682","title":"A Broadband DC-Bias Included CSWPL Model for RF Power Transistors","display_name":"A Broadband DC-Bias Included CSWPL Model for RF Power Transistors","publication_year":2025,"publication_date":"2025-10-22","ids":{"openalex":"https://openalex.org/W4415445235","doi":"https://doi.org/10.1109/tcad.2025.3624682"},"language":null,"primary_location":{"id":"doi:10.1109/tcad.2025.3624682","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2025.3624682","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Enduo Liu","orcid":null},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Enduo Liu","raw_affiliation_strings":["Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5027131038","display_name":"Xiaoqiang Tang","orcid":"https://orcid.org/0009-0006-3110-2394"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoqiang Tang","raw_affiliation_strings":["Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China"],"raw_orcid":"https://orcid.org/0009-0006-3110-2394","affiliations":[{"raw_affiliation_string":"Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100520934","display_name":"Zhiming Fan","orcid":null},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhiming Fan","raw_affiliation_strings":["Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078624745","display_name":"Jialin Cai","orcid":"https://orcid.org/0000-0001-8621-1105"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jialin Cai","raw_affiliation_strings":["Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China"],"raw_orcid":"https://orcid.org/0000-0001-8621-1105","affiliations":[{"raw_affiliation_string":"Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061263806","display_name":"Shichang Chen","orcid":"https://orcid.org/0000-0003-1628-5429"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shichang Chen","raw_affiliation_strings":["Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China"],"raw_orcid":"https://orcid.org/0000-0003-1628-5429","affiliations":[{"raw_affiliation_string":"Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038032064","display_name":"Kuiwen Xu","orcid":"https://orcid.org/0000-0002-4943-5668"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Kuiwen Xu","raw_affiliation_strings":["Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China"],"raw_orcid":"https://orcid.org/0000-0002-4943-5668","affiliations":[{"raw_affiliation_string":"Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I50760025"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.25189482,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"45","issue":"6","first_page":"2707","last_page":"2717"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9907000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9907000064849854,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9811999797821045,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9807999730110168,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/broadband","display_name":"Broadband","score":0.6523000001907349},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6194000244140625},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.5478000044822693},{"id":"https://openalex.org/keywords/transistor-model","display_name":"Transistor model","score":0.5227000117301941},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.5164999961853027},{"id":"https://openalex.org/keywords/piecewise","display_name":"Piecewise","score":0.4749000072479248},{"id":"https://openalex.org/keywords/piecewise-linear-function","display_name":"Piecewise linear function","score":0.42820000648498535},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4043999910354614}],"concepts":[{"id":"https://openalex.org/C509933004","wikidata":"https://www.wikidata.org/wiki/Q194163","display_name":"Broadband","level":2,"score":0.6523000001907349},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6194000244140625},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5917999744415283},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.5478000044822693},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.5227000117301941},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.5164999961853027},{"id":"https://openalex.org/C164660894","wikidata":"https://www.wikidata.org/wiki/Q2037833","display_name":"Piecewise","level":2,"score":0.4749000072479248},{"id":"https://openalex.org/C17095337","wikidata":"https://www.wikidata.org/wiki/Q2375229","display_name":"Piecewise linear function","level":2,"score":0.42820000648498535},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4043999910354614},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.38269999623298645},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.37119999527931213},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.36890000104904175},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3659999966621399},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.35440000891685486},{"id":"https://openalex.org/C8590192","wikidata":"https://www.wikidata.org/wiki/Q1054694","display_name":"Frequency response","level":2,"score":0.31470000743865967},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3050999939441681},{"id":"https://openalex.org/C195266298","wikidata":"https://www.wikidata.org/wiki/Q2165620","display_name":"Scattering parameters","level":2,"score":0.2816999852657318},{"id":"https://openalex.org/C2777904410","wikidata":"https://www.wikidata.org/wiki/Q7397","display_name":"Software","level":2,"score":0.2773999869823456},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.2732999920845032},{"id":"https://openalex.org/C2780009758","wikidata":"https://www.wikidata.org/wiki/Q6804172","display_name":"Measure (data warehouse)","level":2,"score":0.27309998869895935},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.25999999046325684},{"id":"https://openalex.org/C2776502983","wikidata":"https://www.wikidata.org/wiki/Q690182","display_name":"Contrast (vision)","level":2,"score":0.25589999556541443},{"id":"https://openalex.org/C19619285","wikidata":"https://www.wikidata.org/wiki/Q196372","display_name":"Observational error","level":2,"score":0.25130000710487366},{"id":"https://openalex.org/C171115542","wikidata":"https://www.wikidata.org/wiki/Q1331892","display_name":"Software-defined radio","level":2,"score":0.25099998712539673}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcad.2025.3624682","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2025.3624682","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G3276769921","display_name":"\u57fa\u4e8e\u4eba\u5de5\u667a\u80fd\u6280\u672f\u7684\u6beb\u7c73\u6ce2\u529f\u7387\u653e\u5927\u5668\u667a\u80fd\u8bbe\u8ba1\u5173\u952e\u6280\u672f\u7814\u7a76","funder_award_id":"61971170","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G567077514","display_name":null,"funder_award_id":"62371176","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G7313014559","display_name":"\u4e0b\u4e00\u4ee3\u901a\u4fe1\u7528\u9ad8\u96c6\u6210\u5ea6\u6beb\u7c73\u6ce2\u524d\u7aef\u82af\u7247\u5173\u952e\u6280\u672f\u7814\u7a76","funder_award_id":"LD24F010001","funder_id":"https://openalex.org/F4320338464","funder_display_name":"Natural Science Foundation of Zhejiang Province"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320338464","display_name":"Natural Science Foundation of Zhejiang Province","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":[],"abstract_inverted_index":{"A":[0],"new":[1],"broadband":[2],"DC-bias":[3],"included":[4],"model":[5,27,50,60,91,113,118,149],"for":[6],"radio":[7],"frequency":[8,34],"(RF)":[9],"power":[10],"transistors":[11],"is":[12,61,119,150],"presented":[13],"in":[14,29,63],"this":[15,90],"paper.":[16],"The":[17,59],"proposed":[18,117,143],"method":[19],"utilizes":[20],"the":[21,44,48,116,133,142,147,153],"canonical":[22],"section-wise":[23],"piecewise":[24],"linear":[25],"(CSWPL)":[26],"framework":[28],"order":[30],"to":[31,84,121,126,138],"incorporate":[32],"both":[33],"as":[35,37],"well":[36],"bias":[38,100],"information":[39],"simultaneously.":[40],"Detailed":[41],"descriptions":[42],"of":[43,47,99,108,146],"fundamental":[45],"theory":[46],"developed":[49],"are":[51,136],"provided,":[52],"along":[53],"with":[54,73],"their":[55],"validation":[56],"through":[57],"experiments.":[58],"implemented":[62],"commercial":[64],"software":[65],"and":[66,70,86,102,157],"validated":[67],"using":[68,104],"DC":[69],"RF":[71],"tests":[72],"measured":[74],"load-pull":[75],"data":[76],"from":[77],"a":[78,97,122],"10-W":[79],"GaN":[80],"device.":[81],"In":[82],"contrast":[83],"standard":[85],"bias-included":[87],"CSWPL":[88],"models,":[89],"can":[92],"predict":[93],"transistor":[94],"behavior":[95],"under":[96],"variety":[98],"voltages":[101],"frequencies":[103],"only":[105],"one":[106],"set":[107],"parameters,":[109],"thereby":[110],"significantly":[111],"reducing":[112],"complexity.":[114],"Additionally,":[115],"applied":[120],"multi-octave":[123],"PA":[124,135],"design":[125],"provide":[127],"further":[128],"validation.":[129],"Measurements":[130],"made":[131],"on":[132,141],"realized":[134],"compared":[137],"simulations":[139],"based":[140],"model.":[144],"Validity":[145],"extracted":[148],"confirmed":[151],"by":[152],"agreement":[154],"between":[155],"measurements":[156],"simulations.":[158]},"counts_by_year":[],"updated_date":"2026-07-13T07:31:44.756512","created_date":"2025-10-24T00:00:00"}