{"id":"https://openalex.org/W4312556929","doi":"https://doi.org/10.1109/tcad.2022.3226304","title":"Application of Load-Pull X-Parameters for GaN Device-Based Load Modulated Balanced Power Amplifier Design","display_name":"Application of Load-Pull X-Parameters for GaN Device-Based Load Modulated Balanced Power Amplifier Design","publication_year":2022,"publication_date":"2022-12-02","ids":{"openalex":"https://openalex.org/W4312556929","doi":"https://doi.org/10.1109/tcad.2022.3226304"},"language":"en","primary_location":{"id":"doi:10.1109/tcad.2022.3226304","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2022.3226304","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025591071","display_name":"Meilin Wu","orcid":"https://orcid.org/0000-0001-5062-7643"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Meilin Wu","raw_affiliation_strings":["Key Laboratory of RF Circuit and System, Ministry of Education, and Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"Key Laboratory of RF Circuit and System, Ministry of Education, and Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100762074","display_name":"Shijie Wang","orcid":"https://orcid.org/0000-0001-6312-3524"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shijie Wang","raw_affiliation_strings":["Key Laboratory of RF Circuit and System, Ministry of Education, and Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"Key Laboratory of RF Circuit and System, Ministry of Education, and Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013276080","display_name":"Chao Yu","orcid":"https://orcid.org/0000-0002-3710-460X"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chao Yu","raw_affiliation_strings":["State Key Laboratory of Millimeter Waves, Southeast University, Jiangsu, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Millimeter Waves, Southeast University, Jiangsu, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071164847","display_name":"Giovanni Crupi","orcid":"https://orcid.org/0000-0002-6666-6812"},"institutions":[{"id":"https://openalex.org/I112862951","display_name":"University of Messina","ror":"https://ror.org/05ctdxz19","country_code":"IT","type":"education","lineage":["https://openalex.org/I112862951"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Giovanni Crupi","raw_affiliation_strings":["BIOMORF Department, The University of Messina, Messina, Italy"],"affiliations":[{"raw_affiliation_string":"BIOMORF Department, The University of Messina, Messina, Italy","institution_ids":["https://openalex.org/I112862951"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078624745","display_name":"Jialin Cai","orcid":"https://orcid.org/0000-0001-8621-1105"},"institutions":[{"id":"https://openalex.org/I50760025","display_name":"Hangzhou Dianzi University","ror":"https://ror.org/0576gt767","country_code":"CN","type":"education","lineage":["https://openalex.org/I50760025"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jialin Cai","raw_affiliation_strings":["Key Laboratory of RF Circuit and System, Ministry of Education, and Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou, China"],"affiliations":[{"raw_affiliation_string":"Key Laboratory of RF Circuit and System, Ministry of Education, and Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou, China","institution_ids":["https://openalex.org/I50760025"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5025591071"],"corresponding_institution_ids":["https://openalex.org/I50760025"],"apc_list":null,"apc_paid":null,"fwci":1.6623,"has_fulltext":false,"cited_by_count":18,"citation_normalized_percentile":{"value":0.83792134,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":"42","issue":"8","first_page":"2664","last_page":"2674"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9958000183105469,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.8229320049285889},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.6245315074920654},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.6129827499389648},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5828595161437988},{"id":"https://openalex.org/keywords/smith-chart","display_name":"Smith chart","score":0.5423818826675415},{"id":"https://openalex.org/keywords/linearization","display_name":"Linearization","score":0.5140810608863831},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.47770407795906067},{"id":"https://openalex.org/keywords/load-pull","display_name":"Load pull","score":0.47463807463645935},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4533984661102295},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4397384226322174},{"id":"https://openalex.org/keywords/direct-coupled-amplifier","display_name":"Direct-coupled amplifier","score":0.4192863702774048},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.415409654378891},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4131155014038086},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3792383074760437},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.32658910751342773},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3103354573249817},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.2767804265022278},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21437788009643555},{"id":"https://openalex.org/keywords/operational-amplifier","display_name":"Operational amplifier","score":0.16243046522140503},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.12404739856719971},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.09982466697692871},{"id":"https://openalex.org/keywords/impedance-matching","display_name":"Impedance matching","score":0.0817771852016449}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.8229320049285889},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.6245315074920654},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.6129827499389648},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5828595161437988},{"id":"https://openalex.org/C207807769","wikidata":"https://www.wikidata.org/wiki/Q1071416","display_name":"Smith chart","level":4,"score":0.5423818826675415},{"id":"https://openalex.org/C11210021","wikidata":"https://www.wikidata.org/wiki/Q1520713","display_name":"Linearization","level":3,"score":0.5140810608863831},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.47770407795906067},{"id":"https://openalex.org/C2780141302","wikidata":"https://www.wikidata.org/wiki/Q6663311","display_name":"Load pull","level":4,"score":0.47463807463645935},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4533984661102295},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4397384226322174},{"id":"https://openalex.org/C172218469","wikidata":"https://www.wikidata.org/wiki/Q4477697","display_name":"Direct-coupled amplifier","level":5,"score":0.4192863702774048},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.415409654378891},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4131155014038086},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3792383074760437},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.32658910751342773},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3103354573249817},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.2767804265022278},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21437788009643555},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.16243046522140503},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.12404739856719971},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.09982466697692871},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.0817771852016449},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcad.2022.3226304","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2022.3226304","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8700000047683716,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G3276769921","display_name":null,"funder_award_id":"61971170","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6542995536","display_name":null,"funder_award_id":"62022025","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8689359435","display_name":null,"funder_award_id":"GK229909299001-011","funder_id":"https://openalex.org/F4554350417","funder_display_name":"Fundamental Research Funds for the Provincial Universities of Zhejiang"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4554350417","display_name":"Fundamental Research Funds for the Provincial Universities of Zhejiang","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":55,"referenced_works":["https://openalex.org/W1581613055","https://openalex.org/W1642288089","https://openalex.org/W1978123751","https://openalex.org/W1987940988","https://openalex.org/W1990029011","https://openalex.org/W1998457949","https://openalex.org/W2013005829","https://openalex.org/W2025125153","https://openalex.org/W2075561419","https://openalex.org/W2087651956","https://openalex.org/W2104100206","https://openalex.org/W2125837891","https://openalex.org/W2143906132","https://openalex.org/W2155329325","https://openalex.org/W2169249318","https://openalex.org/W2248867217","https://openalex.org/W2325846446","https://openalex.org/W2361089883","https://openalex.org/W2495323230","https://openalex.org/W2512201475","https://openalex.org/W2543605793","https://openalex.org/W2569297434","https://openalex.org/W2595088757","https://openalex.org/W2620491566","https://openalex.org/W2755089468","https://openalex.org/W2761076390","https://openalex.org/W2762062036","https://openalex.org/W2763987772","https://openalex.org/W2764321565","https://openalex.org/W2773562801","https://openalex.org/W2774042261","https://openalex.org/W2886822502","https://openalex.org/W2901436653","https://openalex.org/W2901743640","https://openalex.org/W2901804528","https://openalex.org/W2903723152","https://openalex.org/W2913007879","https://openalex.org/W2947523795","https://openalex.org/W2971735623","https://openalex.org/W3002423374","https://openalex.org/W3018889002","https://openalex.org/W3093907809","https://openalex.org/W3111075739","https://openalex.org/W3135281930","https://openalex.org/W3159241202","https://openalex.org/W3179568842","https://openalex.org/W3192005605","https://openalex.org/W4200255102","https://openalex.org/W4220924398","https://openalex.org/W4221128396","https://openalex.org/W4225510408","https://openalex.org/W4254978292","https://openalex.org/W4285211664","https://openalex.org/W4304892233","https://openalex.org/W6634721125"],"related_works":["https://openalex.org/W2355154599","https://openalex.org/W2096557275","https://openalex.org/W2013890228","https://openalex.org/W2081104977","https://openalex.org/W2894309255","https://openalex.org/W2357901411","https://openalex.org/W2543605793","https://openalex.org/W2347978285","https://openalex.org/W2371626384","https://openalex.org/W4312556929"],"abstract_inverted_index":{"In":[0,110],"this":[1],"work,":[2],"the":[3,34,40,53,63,71,75,85,88,94,104,114,117,122,126,142,145,153,167,206,212],"design":[4,147],"of":[5,15,18,62,74,87,116,125,144,161,170,211],"a":[6,16,25,157,174],"load-modulated":[7],"balanced":[8,20],"power":[9,21,28,54,97,160,182],"amplifier":[10,22,29,55,213],"(LMBA),":[11],"which":[12,103],"is":[13,37,50,130,136,202],"composed":[14],"pair":[17,129],"classical":[19,127],"(BA)":[23],"and":[24,80,83,98,106,138,179,209,216],"signal":[26,201],"control":[27],"(CA),":[30],"based":[31],"on":[32,152],"using":[33],"X-parameter":[35,60,118,123],"model":[36,61,124],"presented":[38],"for":[39,52,119],"first":[41],"time.":[42],"A":[43,195],"10-W":[44],"gallium":[45],"nitride":[46],"(GaN)":[47],"packaged":[48],"transistor":[49],"used":[51,203],"(PA)":[56],"design.":[57],"The":[58,149],"extracted":[59],"device":[64],"under":[65],"test":[66,205],"(DUT)":[67],"can":[68],"accurately":[69],"predict":[70],"nonlinear":[72],"behavioral":[73],"device,":[76],"including":[77],"both":[78,214],"fundamental":[79],"harmonic":[81],"characteristics,":[82],"determine":[84],"region":[86],"Smith":[89],"chart":[90],"that":[91],"leads":[92],"to":[93,112,140,163,204],"optimal":[95],"output":[96,159,181],"drain":[99],"efficiency":[100,185],"(DE),":[101],"with":[102,173,215],"BA":[105,128],"CA":[107],"are":[108,219],"designed.":[109],"order":[111],"facilitate":[113],"application":[115],"LMBA":[120,135],"design,":[121],"further":[131],"extracted.":[132],"Finally,":[133],"an":[134,180],"fabricated":[137],"tested":[139],"verify":[141],"validity":[143],"proposed":[146],"methodology.":[148],"measurements":[150],"performed":[151],"developed":[154],"prototype":[155],"show":[156],"saturation":[158,175],"up":[162],"43.2":[164],"dBm":[165],"in":[166],"frequency":[168],"range":[169],"1.3\u20131.6":[171],"GHz,":[172],"DE":[176],"over":[177,186],"73%":[178],"back-off":[183],"(OBO)":[184],"51%":[187],"when":[188],"it":[189],"has":[190],"more":[191],"than":[192],"9-dB":[193],"OBO.":[194],"single-carrier":[196],"20-MHz":[197],"long-term":[198],"evolution":[199],"(LTE)":[200],"designed":[207],"PA,":[208],"performance":[210],"without":[217],"linearization":[218],"given.":[220]},"counts_by_year":[{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":8},{"year":2023,"cited_by_count":4}],"updated_date":"2026-04-09T08:11:56.329763","created_date":"2025-10-10T00:00:00"}