{"id":"https://openalex.org/W2536416415","doi":"https://doi.org/10.1109/tcad.2016.2619484","title":"Persistent and Nonpersistent Error Optimization for STT-RAM Cell Design","display_name":"Persistent and Nonpersistent Error Optimization for STT-RAM Cell Design","publication_year":2016,"publication_date":"2016-10-19","ids":{"openalex":"https://openalex.org/W2536416415","doi":"https://doi.org/10.1109/tcad.2016.2619484","mag":"2536416415"},"language":"en","primary_location":{"id":"doi:10.1109/tcad.2016.2619484","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2016.2619484","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101538623","display_name":"Yaojun Zhang","orcid":"https://orcid.org/0000-0002-0125-2221"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yaojun Zhang","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA"],"raw_orcid":"https://orcid.org/0000-0002-0125-2221","affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I170201317"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5043075091","display_name":"Bonan Yan","orcid":"https://orcid.org/0000-0002-3052-9330"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bonan Yan","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I170201317"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036254084","display_name":"Xiaobin Wang","orcid":"https://orcid.org/0000-0003-0606-4710"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xiaobin Wang","raw_affiliation_strings":["Avalanche Technology, Fremont, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Avalanche Technology, Fremont, CA, USA","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5058073627","display_name":"Yiran Chen","orcid":"https://orcid.org/0000-0002-1486-8412"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yiran Chen","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I170201317"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5101538623"],"corresponding_institution_ids":["https://openalex.org/I170201317"],"apc_list":null,"apc_paid":null,"fwci":1.085,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.79842237,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":"36","issue":"7","first_page":"1181","last_page":"1192"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13531","display_name":"Surface and Thin Film Phenomena","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7341358661651611},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.549000084400177},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5466915965080261},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.5272318720817566},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4982435703277588},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.485200434923172},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.47914451360702515},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4451533257961273},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.4390261769294739},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.3955899178981781},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3369101285934448},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.24278444051742554},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.24266886711120605},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21355345845222473},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.12577807903289795},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.09753099083900452},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09314015507698059}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7341358661651611},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.549000084400177},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5466915965080261},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.5272318720817566},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4982435703277588},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.485200434923172},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.47914451360702515},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4451533257961273},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.4390261769294739},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.3955899178981781},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3369101285934448},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.24278444051742554},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.24266886711120605},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21355345845222473},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.12577807903289795},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.09753099083900452},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09314015507698059},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcad.2016.2619484","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2016.2619484","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.46000000834465027,"id":"https://metadata.un.org/sdg/9"}],"awards":[{"id":"https://openalex.org/G6453572617","display_name":null,"funder_award_id":"1202225","funder_id":"https://openalex.org/F4320337392","funder_display_name":"Division of Electrical, Communications and Cyber Systems"},{"id":"https://openalex.org/G659400309","display_name":null,"funder_award_id":"1253424","funder_id":"https://openalex.org/F4320337388","funder_display_name":"Division of Computer and Network Systems"}],"funders":[{"id":"https://openalex.org/F4320337388","display_name":"Division of Computer and Network Systems","ror":"https://ror.org/02rdzmk74"},{"id":"https://openalex.org/F4320337392","display_name":"Division of Electrical, Communications and Cyber Systems","ror":"https://ror.org/01krpsy48"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1975904824","https://openalex.org/W1991813033","https://openalex.org/W2014987330","https://openalex.org/W2042076387","https://openalex.org/W2052572346","https://openalex.org/W2057386187","https://openalex.org/W2058578697","https://openalex.org/W2075769654","https://openalex.org/W2084007230","https://openalex.org/W2106738517","https://openalex.org/W2108453702","https://openalex.org/W2116826022","https://openalex.org/W2148394909","https://openalex.org/W2150283124","https://openalex.org/W2154941994","https://openalex.org/W2162586752","https://openalex.org/W2163283381","https://openalex.org/W2188761345","https://openalex.org/W2220434993","https://openalex.org/W2951488649","https://openalex.org/W4285719527","https://openalex.org/W6687026183","https://openalex.org/W6764270446"],"related_works":["https://openalex.org/W4388285079","https://openalex.org/W4235980920","https://openalex.org/W2342993049","https://openalex.org/W4387872710","https://openalex.org/W2166311875","https://openalex.org/W2099729013","https://openalex.org/W4233433957","https://openalex.org/W2794240619","https://openalex.org/W2533606240","https://openalex.org/W2528984591"],"abstract_inverted_index":{"Rapidly":[0],"increasing":[1],"demands":[2],"for":[3,178],"memory":[4,13,21,31],"capacity":[5],"and":[6,47,60,74,82,90,102,120,136,145,157],"severe":[7],"technical":[8],"scaling":[9],"challenges":[10],"of":[11,62,85,100,169],"conventional":[12],"technologies":[14],"motivated":[15],"recent":[16],"investments":[17],"on":[18,124],"next-generation":[19],"nonvolatile":[20],"technologies.":[22],"As":[23,77],"a":[24,78,170],"promising":[25],"candidate,":[26],"spin-transfer":[27],"torque":[28],"random":[29],"access":[30,41],"(STT-RAM)":[32],"has":[33],"demonstrated":[34],"many":[35],"attractive":[36],"properties,":[37],"such":[38],"as":[39],"nanosecond":[40],"time,":[42],"high":[43],"integration":[44,50],"density,":[45],"nonvolatility,":[46],"excellent":[48],"CMOS":[49,101],"compatibility.":[51],"However,":[52],"similar":[53],"to":[54,152],"all":[55],"other":[56],"nano-devices,":[57],"the":[58,80,98,155,167],"performance":[59],"reliability":[61,131],"STT-RAM":[63,86,125,129,161,176],"cells":[64],"are":[65,114,139],"greatly":[66],"affected":[67],"by":[68,116],"process":[69,107],"variations,":[70,108],"device":[71],"operating":[72],"uncertainties,":[73],"environmental":[75],"fluctuations.":[76],"result,":[79],"read":[81,135],"write":[83,137],"operations":[84,138],"demonstrate":[87],"some":[88],"variabilities":[89],"errors.":[91],"In":[92],"this":[93],"paper,":[94],"we":[95],"systematically":[96],"analyze":[97],"impacts":[99],"magnetic":[103,146],"tunneling":[104],"junction":[105],"(MTJ)":[106],"MTJ":[109],"resistance":[110],"switching":[111],"randomness":[112],"that":[113],"induced":[115],"intrinsic":[117],"thermal":[118],"fluctuations,":[119],"working":[121],"temperature":[122],"changes":[123],"cell":[126,130,162],"designs.":[127],"The":[128],"issues":[132],"in":[133,160,175],"both":[134],"first":[140],"investigated.":[141],"A":[142],"combined":[143],"circuit":[144],"simulation":[147],"platform":[148],"is":[149],"then":[150],"established":[151],"quantitatively":[153],"study":[154],"persistent":[156],"nonpersistent":[158],"errors":[159],"operations.":[163],"Our":[164],"analysis":[165],"proved":[166],"importance":[168],"full":[171],"statistical":[172],"design":[173,179],"method":[174],"designs":[177],"pessimism":[180],"minimization.":[181]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}