{"id":"https://openalex.org/W2277230396","doi":"https://doi.org/10.1109/tcad.2015.2474366","title":"Radiation-Induced Soft Error Analysis of STT-MRAM: A Device to Circuit Approach","display_name":"Radiation-Induced Soft Error Analysis of STT-MRAM: A Device to Circuit Approach","publication_year":2015,"publication_date":"2015-08-28","ids":{"openalex":"https://openalex.org/W2277230396","doi":"https://doi.org/10.1109/tcad.2015.2474366","mag":"2277230396"},"language":"en","primary_location":{"id":"doi:10.1109/tcad.2015.2474366","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2015.2474366","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5053303853","display_name":"Jianlei Yang","orcid":"https://orcid.org/0000-0001-8424-7040"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jianlei Yang","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA"],"raw_orcid":"https://orcid.org/0000-0001-8424-7040","affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I170201317"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074614151","display_name":"Peiyuan Wang","orcid":"https://orcid.org/0000-0002-0825-713X"},"institutions":[{"id":"https://openalex.org/I4210087596","display_name":"Qualcomm (United States)","ror":"https://ror.org/002zrf773","country_code":"US","type":"company","lineage":["https://openalex.org/I4210087596"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peiyuan Wang","raw_affiliation_strings":["Qualcomm Research, San Diego, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Qualcomm Research, San Diego, CA, USA","institution_ids":["https://openalex.org/I4210087596"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101538623","display_name":"Yaojun Zhang","orcid":"https://orcid.org/0000-0002-0125-2221"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yaojun Zhang","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I170201317"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091884273","display_name":"Yuanqing Cheng","orcid":"https://orcid.org/0000-0003-2477-314X"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuanqing Cheng","raw_affiliation_strings":["Department of Electronic and Information Engineering, Beihang University, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Information Engineering, Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066473925","display_name":"Weisheng Zhao","orcid":"https://orcid.org/0000-0001-8088-0404"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN","FR"],"is_corresponding":false,"raw_author_name":"Weisheng Zhao","raw_affiliation_strings":["Department of Electronic and Information Engineering, Beihang University, Beijing, China","Institute of Fundamental Electronics, University Paris-Sud, CNRS, Orsay, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronic and Information Engineering, Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]},{"raw_affiliation_string":"Institute of Fundamental Electronics, University Paris-Sud, CNRS, Orsay, France","institution_ids":["https://openalex.org/I1294671590"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058073627","display_name":"Yiran Chen","orcid":"https://orcid.org/0000-0002-1486-8412"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yiran Chen","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I170201317"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100429403","display_name":"Hai Li","orcid":"https://orcid.org/0000-0003-3228-6544"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Hai Helen Li","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, PA, USA","institution_ids":["https://openalex.org/I170201317"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":4,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.8162,"has_fulltext":false,"cited_by_count":44,"citation_normalized_percentile":{"value":0.85786446,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":"35","issue":"3","first_page":"380","last_page":"393"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8628741502761841},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5964056253433228},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5934707522392273},{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.5157718658447266},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.48377725481987},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.47283583879470825},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.4123307168483734},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3986817002296448},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3584723472595215},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18393924832344055},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.15536418557167053},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.143463134765625},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.12295868992805481},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.12080985307693481},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11636322736740112}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8628741502761841},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5964056253433228},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5934707522392273},{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.5157718658447266},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.48377725481987},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.47283583879470825},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.4123307168483734},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3986817002296448},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3584723472595215},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18393924832344055},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.15536418557167053},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.143463134765625},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.12295868992805481},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.12080985307693481},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11636322736740112},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcad.2015.2474366","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2015.2474366","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G3696559202","display_name":"CSR: Small: Collaborative Research: Cross-Layer Design Techniques for Robustness of the Next-Generation Nonvolatile Memories","funder_award_id":"1116171","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"},{"id":"https://openalex.org/G7590502526","display_name":"SHF:Small: Collaborative Research: STEMS: STatistic Emerging Memory Simulator","funder_award_id":"1217947","funder_id":"https://openalex.org/F4320306076","funder_display_name":"National Science Foundation"}],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W659101848","https://openalex.org/W1856375578","https://openalex.org/W1967547265","https://openalex.org/W1974831841","https://openalex.org/W1975904824","https://openalex.org/W1985478976","https://openalex.org/W1985887979","https://openalex.org/W1993991717","https://openalex.org/W1995771228","https://openalex.org/W1996356878","https://openalex.org/W2020247782","https://openalex.org/W2065495001","https://openalex.org/W2071068906","https://openalex.org/W2072790036","https://openalex.org/W2083945164","https://openalex.org/W2084007230","https://openalex.org/W2085003225","https://openalex.org/W2096470311","https://openalex.org/W2099569658","https://openalex.org/W2117949238","https://openalex.org/W2126248298","https://openalex.org/W2128881154","https://openalex.org/W2132550088","https://openalex.org/W2144119405","https://openalex.org/W2150047813","https://openalex.org/W2165916157","https://openalex.org/W2171008063","https://openalex.org/W2318838415","https://openalex.org/W2327150258","https://openalex.org/W3149410719","https://openalex.org/W3152241699","https://openalex.org/W4251758819"],"related_works":["https://openalex.org/W4388285079","https://openalex.org/W2546997659","https://openalex.org/W1517543257","https://openalex.org/W2733919783","https://openalex.org/W2425808153","https://openalex.org/W2404332818","https://openalex.org/W4281561022","https://openalex.org/W2188761345","https://openalex.org/W3006384944","https://openalex.org/W2000290833"],"abstract_inverted_index":{"Spin-transfer":[0],"torque":[1],"magnetic":[2,102],"random":[3,172],"access":[4,44],"memory":[5,11,156],"(STT-MRAM)":[6],"is":[7,33,62,86,106,123,180],"a":[8,59,97],"promising":[9],"emerging":[10],"technology":[12],"due":[13],"to":[14,64,74,89,108,133],"its":[15],"various":[16,111],"advantageous":[17],"features":[18],"such":[19,140],"as":[20,127,141],"scalability,":[21],"nonvolatility,":[22],"density,":[23],"endurance,":[24],"and":[25,50,125,147,161,175,189],"fast":[26],"speed.":[27],"However,":[28],"the":[29,43,66,91,110,135],"reliability":[30],"of":[31,101,113,119,121,137,154,185],"STT-MRAM":[32,114,155,187],"severely":[34],"impacted":[35],"by":[36],"environmental":[37],"disturbances":[38],"because":[39],"radiation":[40,142,173],"strike":[41],"on":[42,81,150],"transistor":[45,84],"could":[46],"introduce":[47],"potential":[48],"write":[49,115,144,160],"read":[51,188],"failures":[52],"for":[53,166,182],"1T1MTJ":[54,122],"cells.":[55],"In":[56],"this":[57],"paper,":[58],"comprehensive":[60,159],"approach":[61,130],"proposed":[63],"evaluate":[65],"radiation-induced":[67,92],"soft":[68,151],"errors":[69],"spanning":[70],"from":[71],"device":[72],"modeling":[73,85],"circuit":[75],"level":[76],"analysis.":[77],"The":[78,117],"simulation":[79],"based":[80],"3-D":[82],"metal-oxide-semiconductor":[83],"first":[87],"performed":[88],"capture":[90],"transient":[93],"current":[94,145],"pulse.":[95],"Then":[96],"compact":[98],"switching":[99],"model":[100],"tunneling":[103],"junction":[104],"(MTJ)":[105],"developed":[107],"analyze":[109],"mechanisms":[112],"failures.":[116],"probability":[118],"failure":[120],"characterized":[124],"built":[126],"look-up-tables.":[128],"This":[129],"enables":[131],"designers":[132],"consider":[134],"effect":[136],"different":[138],"factors":[139],"strength,":[143],"magnitude":[146],"duration":[148],"time":[149],"error":[152,168],"rate":[153,169],"arrays.":[157],"Meanwhile,":[158],"sense":[162,190],"circuits":[163],"are":[164],"evaluated":[165],"bit":[167],"analysis":[170],"under":[171],"effects":[174],"transistors":[176],"process":[177],"variation,":[178],"which":[179],"critical":[181],"performance":[183],"optimization":[184],"practical":[186],"circuits.":[191]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":8},{"year":2019,"cited_by_count":7},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":2}],"updated_date":"2026-08-06T08:24:18.245995","created_date":"2025-10-10T00:00:00"}