{"id":"https://openalex.org/W2043890437","doi":"https://doi.org/10.1109/tcad.2013.2237770","title":"Impact of Mechanical Stress on the Full Chip Timing for Through-Silicon-Via-based 3-D ICs","display_name":"Impact of Mechanical Stress on the Full Chip Timing for Through-Silicon-Via-based 3-D ICs","publication_year":2013,"publication_date":"2013-05-15","ids":{"openalex":"https://openalex.org/W2043890437","doi":"https://doi.org/10.1109/tcad.2013.2237770","mag":"2043890437"},"language":"en","primary_location":{"id":"doi:10.1109/tcad.2013.2237770","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2013.2237770","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067424365","display_name":"Krit Athikulwongse","orcid":"https://orcid.org/0000-0002-4092-8634"},"institutions":[{"id":"https://openalex.org/I14316845","display_name":"National Electronics and Computer Technology Center","ror":"https://ror.org/04z82ry91","country_code":"TH","type":"government","lineage":["https://openalex.org/I1332092204","https://openalex.org/I14316845"]}],"countries":["TH"],"is_corresponding":true,"raw_author_name":"K. Athikulwongse","raw_affiliation_strings":["National Electronics and Computer Technology Center, Pathum Thani, Thailand","Nat. Electron. & Comput. Technol. Center, Pathum Thani, Thailand"],"affiliations":[{"raw_affiliation_string":"National Electronics and Computer Technology Center, Pathum Thani, Thailand","institution_ids":["https://openalex.org/I14316845"]},{"raw_affiliation_string":"Nat. Electron. & Comput. Technol. Center, Pathum Thani, Thailand","institution_ids":["https://openalex.org/I14316845"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080009275","display_name":"Jaeseok Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jae-Seok Yang","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA","Dept. of Electr. &, Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]},{"raw_affiliation_string":"Dept. of Electr. &, Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011883763","display_name":"David Z. Pan","orcid":"https://orcid.org/0000-0002-5705-2501"},"institutions":[{"id":"https://openalex.org/I86519309","display_name":"The University of Texas at Austin","ror":"https://ror.org/00hj54h04","country_code":"US","type":"education","lineage":["https://openalex.org/I86519309"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D. Z. Pan","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA","Dept. of Electr. &, Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Texas, Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]},{"raw_affiliation_string":"Dept. of Electr. &, Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA","institution_ids":["https://openalex.org/I86519309"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5052950521","display_name":"Sung Kyu Lim","orcid":"https://orcid.org/0000-0002-2267-5282"},"institutions":[{"id":"https://openalex.org/I130701444","display_name":"Georgia Institute of Technology","ror":"https://ror.org/01zkghx44","country_code":"US","type":"education","lineage":["https://openalex.org/I130701444"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Sung Kyu Lim","raw_affiliation_strings":["School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA"],"affiliations":[{"raw_affiliation_string":"School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]},{"raw_affiliation_string":"Sch. of Electr. & Comput. Eng.,, Georgia Inst. of Technol., Atlanta, GA, USA","institution_ids":["https://openalex.org/I130701444"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5067424365"],"corresponding_institution_ids":["https://openalex.org/I14316845"],"apc_list":null,"apc_paid":null,"fwci":1.6551,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.85467152,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"32","issue":"6","first_page":"905","last_page":"917"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6853488683700562},{"id":"https://openalex.org/keywords/shallow-trench-isolation","display_name":"Shallow trench isolation","score":0.5776984691619873},{"id":"https://openalex.org/keywords/finite-element-method","display_name":"Finite element method","score":0.4886782467365265},{"id":"https://openalex.org/keywords/netlist","display_name":"Netlist","score":0.4886172413825989},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4725643992424011},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4378213882446289},{"id":"https://openalex.org/keywords/trench","display_name":"Trench","score":0.4317348599433899},{"id":"https://openalex.org/keywords/static-timing-analysis","display_name":"Static timing analysis","score":0.42301270365715027},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3764113485813141},{"id":"https://openalex.org/keywords/structural-engineering","display_name":"Structural engineering","score":0.35088977217674255},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.27825525403022766},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21424075961112976},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.15601608157157898},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.12196782231330872}],"concepts":[{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6853488683700562},{"id":"https://openalex.org/C105066941","wikidata":"https://www.wikidata.org/wiki/Q1424524","display_name":"Shallow trench isolation","level":4,"score":0.5776984691619873},{"id":"https://openalex.org/C135628077","wikidata":"https://www.wikidata.org/wiki/Q220184","display_name":"Finite element method","level":2,"score":0.4886782467365265},{"id":"https://openalex.org/C177650935","wikidata":"https://www.wikidata.org/wiki/Q1760303","display_name":"Netlist","level":2,"score":0.4886172413825989},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4725643992424011},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4378213882446289},{"id":"https://openalex.org/C155310634","wikidata":"https://www.wikidata.org/wiki/Q1852785","display_name":"Trench","level":3,"score":0.4317348599433899},{"id":"https://openalex.org/C93682380","wikidata":"https://www.wikidata.org/wiki/Q2025226","display_name":"Static timing analysis","level":2,"score":0.42301270365715027},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3764113485813141},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.35088977217674255},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.27825525403022766},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21424075961112976},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.15601608157157898},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.12196782231330872},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcad.2013.2237770","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.2013.2237770","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Industry, innovation and infrastructure","score":0.4699999988079071,"id":"https://metadata.un.org/sdg/9"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W2002257666","https://openalex.org/W2015941345","https://openalex.org/W2026777333","https://openalex.org/W2043843580","https://openalex.org/W2061821008","https://openalex.org/W2069345435","https://openalex.org/W2073320852","https://openalex.org/W2118294059","https://openalex.org/W2118456109","https://openalex.org/W2124955733","https://openalex.org/W2125411772","https://openalex.org/W2126084661","https://openalex.org/W2128613910","https://openalex.org/W2132227497","https://openalex.org/W2140232930","https://openalex.org/W2150620980","https://openalex.org/W2154869256","https://openalex.org/W2157763436","https://openalex.org/W2163318360","https://openalex.org/W2540429523","https://openalex.org/W2546770439","https://openalex.org/W3150476217","https://openalex.org/W4230375614","https://openalex.org/W6654486189","https://openalex.org/W6657332359"],"related_works":["https://openalex.org/W2006928005","https://openalex.org/W2163920059","https://openalex.org/W2749871982","https://openalex.org/W2119814266","https://openalex.org/W2140756430","https://openalex.org/W2104314732","https://openalex.org/W2086971958","https://openalex.org/W2188624265","https://openalex.org/W2536525725","https://openalex.org/W1992381812"],"abstract_inverted_index":{"In":[0],"this":[1],"paper,":[2],"we":[3,42,163],"study":[4],"the":[5,17,26,79,153,165],"impact":[6],"of":[7,20,108,172],"through-silicon-via":[8],"(TSV)":[9],"and":[10,32,77,81,88,95,99,116,123,125,132,140,189],"shallow":[11],"trench":[12],"isolation":[13],"(STI)":[14],"stress":[15,45,52,60,115,118,131],"on":[16,71],"timing":[18,30,106,144],"variations":[19,145],"3-D":[21,109,173],"IC.":[22,110],"We":[23,56,111,175],"also":[24,57],"propose":[25],"first":[27],"systematic":[28],"TSV-STI-stress-aware":[29],"analysis":[31,67,107],"show":[33,176],"how":[34],"to":[35,86,130,137,160,169,187],"optimize":[36],"layouts":[37],"for":[38,54,62,105],"better":[39],"performance.":[40],"First,":[41],"generate":[43],"a":[44,59],"contour":[46],"map":[47],"with":[48,120,135],"an":[49,102,158],"analytical":[50],"radial":[51],"model":[53,61],"TSV.":[55],"develop":[58],"STI":[63,117],"from":[64],"finite":[65],"element":[66],"results.":[68],"Then,":[69],"depending":[70],"geometric":[72],"relation":[73],"between":[74],"TSVs,":[75],"STI,":[76],"transistors,":[78],"tensile":[80],"compressive":[82],"stresses":[83],"are":[84,97],"converted":[85],"hole":[87],"electron":[89],"mobility":[90,167],"variations.":[91],"Mobility-variation-aware":[92],"cell":[93,154,183],"library":[94],"netlist":[96],"generated":[98],"incorporated":[100],"into":[101],"industrial":[103],"engine":[104],"observe":[112],"that":[113,177],"TSV":[114],"interact":[119],"each":[121],"other,":[122],"rise":[124],"fall":[126],"time":[127],"react":[128],"differently":[129],"relative":[133],"locations":[134],"respect":[136],"both":[138],"TSVs":[139],"STIs.":[141],"Overall,":[142],"TSV-STI-stress-induced":[143],"can":[146],"be":[147],"as":[148,150,157],"much":[149],"\u00b115%":[151],"at":[152],"level.":[155],"Thus,":[156],"application":[159],"layout":[161,179],"optimization,":[162],"exploit":[164],"stress-induced":[166],"enhancement":[168],"improve":[170],"performance":[171],"ICs.":[174],"stress-aware":[178],"perturbation":[180],"could":[181],"reduce":[182],"delay":[184,192],"by":[185,193],"up":[186],"23.37%":[188],"critical":[190],"path":[191],"6.67%":[194],"in":[195],"our":[196],"test":[197],"case.":[198]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":4},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}