{"id":"https://openalex.org/W2104651336","doi":"https://doi.org/10.1109/tcad.1985.1270097","title":"Finite-Element Simulation of Local Oxidation of Silicon","display_name":"Finite-Element Simulation of Local Oxidation of Silicon","publication_year":1985,"publication_date":"1985-01-01","ids":{"openalex":"https://openalex.org/W2104651336","doi":"https://doi.org/10.1109/tcad.1985.1270097","mag":"2104651336"},"language":"en","primary_location":{"id":"doi:10.1109/tcad.1985.1270097","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.1985.1270097","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5044789579","display_name":"A. Poncet","orcid":null},"institutions":[{"id":"https://openalex.org/I19370010","display_name":"Orange (France)","ror":"https://ror.org/035j0tq82","country_code":"FR","type":"company","lineage":["https://openalex.org/I19370010"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"A. Poncet","raw_affiliation_strings":["Centre National d''Etudes Des Telecommunications, Meylan, France","Centre National d'Etudes des Telecommunications (CNET) BP 42, 38240 Meylan, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre National d''Etudes Des Telecommunications, Meylan, France","institution_ids":[]},{"raw_affiliation_string":"Centre National d'Etudes des Telecommunications (CNET) BP 42, 38240 Meylan, France","institution_ids":["https://openalex.org/I19370010"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5044789579"],"corresponding_institution_ids":["https://openalex.org/I19370010"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":2.1991,"has_fulltext":false,"cited_by_count":35,"citation_normalized_percentile":{"value":0.88179023,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"4","issue":"1","first_page":"41","last_page":"53"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12340","display_name":"Anodic Oxide Films and Nanostructures","score":0.9943000078201294,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12340","display_name":"Anodic Oxide Films and Nanostructures","score":0.9943000078201294,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9937999844551086,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10132","display_name":"Advanced ceramic materials synthesis","score":0.9927999973297119,"subfield":{"id":"https://openalex.org/subfields/2503","display_name":"Ceramics and Composites"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/finite-element-method","display_name":"Finite element method","score":0.7909229397773743},{"id":"https://openalex.org/keywords/diffusion","display_name":"Diffusion","score":0.6388207674026489},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6174470782279968},{"id":"https://openalex.org/keywords/oxidizing-agent","display_name":"Oxidizing agent","score":0.5446355938911438},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5115929245948792},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.5075787305831909},{"id":"https://openalex.org/keywords/computer-simulation","display_name":"Computer simulation","score":0.4727519452571869},{"id":"https://openalex.org/keywords/silicon-nitride","display_name":"Silicon nitride","score":0.4613950252532959},{"id":"https://openalex.org/keywords/silo","display_name":"Silo","score":0.4583664536476135},{"id":"https://openalex.org/keywords/silicon-dioxide","display_name":"Silicon dioxide","score":0.42832446098327637},{"id":"https://openalex.org/keywords/mechanics","display_name":"Mechanics","score":0.3939440846443176},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.32147353887557983},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.26774200797080994},{"id":"https://openalex.org/keywords/mechanical-engineering","display_name":"Mechanical engineering","score":0.26665911078453064},{"id":"https://openalex.org/keywords/structural-engineering","display_name":"Structural engineering","score":0.2520369291305542},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17546862363815308},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.13129422068595886},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.10550051927566528},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07391569018363953}],"concepts":[{"id":"https://openalex.org/C135628077","wikidata":"https://www.wikidata.org/wiki/Q220184","display_name":"Finite element method","level":2,"score":0.7909229397773743},{"id":"https://openalex.org/C69357855","wikidata":"https://www.wikidata.org/wiki/Q163214","display_name":"Diffusion","level":2,"score":0.6388207674026489},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6174470782279968},{"id":"https://openalex.org/C77176794","wikidata":"https://www.wikidata.org/wiki/Q187689","display_name":"Oxidizing agent","level":2,"score":0.5446355938911438},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5115929245948792},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.5075787305831909},{"id":"https://openalex.org/C500300565","wikidata":"https://www.wikidata.org/wiki/Q925667","display_name":"Computer simulation","level":2,"score":0.4727519452571869},{"id":"https://openalex.org/C2777431650","wikidata":"https://www.wikidata.org/wiki/Q413828","display_name":"Silicon nitride","level":3,"score":0.4613950252532959},{"id":"https://openalex.org/C2778024958","wikidata":"https://www.wikidata.org/wiki/Q213643","display_name":"Silo","level":2,"score":0.4583664536476135},{"id":"https://openalex.org/C2779089622","wikidata":"https://www.wikidata.org/wiki/Q116269","display_name":"Silicon dioxide","level":2,"score":0.42832446098327637},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.3939440846443176},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.32147353887557983},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.26774200797080994},{"id":"https://openalex.org/C78519656","wikidata":"https://www.wikidata.org/wiki/Q101333","display_name":"Mechanical engineering","level":1,"score":0.26665911078453064},{"id":"https://openalex.org/C66938386","wikidata":"https://www.wikidata.org/wiki/Q633538","display_name":"Structural engineering","level":1,"score":0.2520369291305542},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17546862363815308},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.13129422068595886},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.10550051927566528},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07391569018363953},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcad.1985.1270097","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcad.1985.1270097","pdf_url":null,"source":{"id":"https://openalex.org/S100835903","display_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","issn_l":"0278-0070","issn":["0278-0070","1937-4151"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W624519835","https://openalex.org/W1580966974","https://openalex.org/W1944890485","https://openalex.org/W1968373396","https://openalex.org/W1974931486","https://openalex.org/W2005331166","https://openalex.org/W2005392323","https://openalex.org/W2022385105","https://openalex.org/W2071915747","https://openalex.org/W2085955437","https://openalex.org/W2089531636","https://openalex.org/W2091246468","https://openalex.org/W2091537748","https://openalex.org/W2093914900","https://openalex.org/W2155855430","https://openalex.org/W4250690007","https://openalex.org/W6673217669"],"related_works":["https://openalex.org/W2523330964","https://openalex.org/W2383857829","https://openalex.org/W2023971635","https://openalex.org/W2903433011","https://openalex.org/W2041371751","https://openalex.org/W2171719154","https://openalex.org/W1983699832","https://openalex.org/W1632443136","https://openalex.org/W1973094266","https://openalex.org/W2510416009"],"abstract_inverted_index":{"In":[0],"this":[1,35],"paper,":[2],"various":[3],"numerical":[4],"models":[5],"for":[6],"finite":[7],"element":[8],"simulation":[9,84],"of":[10,13,23,29,34,40,58,78,85],"local":[11,56],"oxidation":[12],"silicon":[14],"are":[15,50,65,91],"investigated.":[16],"The":[17,32,55],"simplest":[18],"one":[19],"contains":[20],"linear":[21],"diffusion":[22,63],"oxidizing":[24],"species":[25],"and":[26,37,42,67,88],"elastic":[27],"displacements":[28],"dioxide":[30],"layers.":[31],"limitations":[33],"model":[36,70],"the":[38,62],"influences":[39],"pad-oxide":[41],"nitride":[43],"mask":[44],"thicknesses":[45],"as":[46,48],"well":[47],"temperature":[49],"illustrated":[51],"by":[52],"computer":[53],"simulations.":[54],"effects":[57],"mechanical":[59],"stresses":[60],"on":[61],"mechanism":[64],"simulated":[66],"an":[68],"elasto-visco-plastic":[69],"is":[71],"proposed":[72],"so":[73],"that":[74],"a":[75],"wide":[76],"range":[77],"temperatures":[79],"can":[80],"be":[81],"covered.":[82],"Finite-Element":[83],"semi-Rox,":[86],"full-Rox,":[87],"SILO":[89],"processes":[90],"presented.":[92]},"counts_by_year":[{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":2}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2025-10-10T00:00:00"}