{"id":"https://openalex.org/W7117470660","doi":"https://doi.org/10.1109/tc.2025.3649150","title":"Evaluation of Radiation Resilience, Performance, and V <sub>min</sub> of Sub-3\u2009nm FSFET Based SRAM Arrays","display_name":"Evaluation of Radiation Resilience, Performance, and V <sub>min</sub> of Sub-3\u2009nm FSFET Based SRAM Arrays","publication_year":2025,"publication_date":"2025-12-29","ids":{"openalex":"https://openalex.org/W7117470660","doi":"https://doi.org/10.1109/tc.2025.3649150"},"language":null,"primary_location":{"id":"doi:10.1109/tc.2025.3649150","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tc.2025.3649150","pdf_url":null,"source":{"id":"https://openalex.org/S157670870","display_name":"IEEE Transactions on Computers","issn_l":"0018-9340","issn":["0018-9340","0016-9340","1557-9956","2326-3814"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5107644053","display_name":"Hafeez Raza","orcid":null},"institutions":[{"id":"https://openalex.org/I94234084","display_name":"Indian Institute of Technology Kanpur","ror":"https://ror.org/05pjsgx75","country_code":"IN","type":"education","lineage":["https://openalex.org/I94234084"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Hafeez Raza","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology (IIT), Kanpur, India"],"raw_orcid":"https://orcid.org/0009-0009-4679-8007","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology (IIT), Kanpur, India","institution_ids":["https://openalex.org/I94234084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5121504559","display_name":"Mahdi Benkhelifa","orcid":null},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mahdi Benkhelifa","raw_affiliation_strings":["Munich Institute of Robotics and Machine Intelligence, Technical University of Munich, TUM School of Computation, Information and Technology, Munich, Germany"],"raw_orcid":"https://orcid.org/0000-0002-8982-2902","affiliations":[{"raw_affiliation_string":"Munich Institute of Robotics and Machine Intelligence, Technical University of Munich, TUM School of Computation, Information and Technology, Munich, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018215943","display_name":"K. Anil Kumar","orcid":null},"institutions":[{"id":"https://openalex.org/I94234084","display_name":"Indian Institute of Technology Kanpur","ror":"https://ror.org/05pjsgx75","country_code":"IN","type":"education","lineage":["https://openalex.org/I94234084"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Koshal Kumar","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology (IIT), Kanpur, India"],"raw_orcid":"https://orcid.org/0009-0006-4520-2548","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology (IIT), Kanpur, India","institution_ids":["https://openalex.org/I94234084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032329214","display_name":"Shivendra Singh Parihar","orcid":"https://orcid.org/0000-0001-7104-2396"},"institutions":[{"id":"https://openalex.org/I95457486","display_name":"University of California, Berkeley","ror":"https://ror.org/01an7q238","country_code":"US","type":"education","lineage":["https://openalex.org/I95457486"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Shivendra Singh Parihar","raw_affiliation_strings":["Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA"],"raw_orcid":"https://orcid.org/0000-0001-7104-2396","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, USA","institution_ids":["https://openalex.org/I95457486"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5121481104","display_name":"Yogesh Singh Chauhan","orcid":null},"institutions":[{"id":"https://openalex.org/I94234084","display_name":"Indian Institute of Technology Kanpur","ror":"https://ror.org/05pjsgx75","country_code":"IN","type":"education","lineage":["https://openalex.org/I94234084"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Yogesh Singh Chauhan","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology (IIT), Kanpur, India"],"raw_orcid":"https://orcid.org/0000-0002-3356-8917","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology (IIT), Kanpur, India","institution_ids":["https://openalex.org/I94234084"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059133190","display_name":"Hussam Amrouch","orcid":"https://orcid.org/0000-0002-5649-3102"},"institutions":[{"id":"https://openalex.org/I62916508","display_name":"Technical University of Munich","ror":"https://ror.org/02kkvpp62","country_code":"DE","type":"education","lineage":["https://openalex.org/I62916508"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Hussam Amrouch","raw_affiliation_strings":["Munich Institute of Robotics and Machine Intelligence, Technical University of Munich, TUM School of Computation, Information and Technology, Munich, Germany"],"raw_orcid":"https://orcid.org/0000-0002-5649-3102","affiliations":[{"raw_affiliation_string":"Munich Institute of Robotics and Machine Intelligence, Technical University of Munich, TUM School of Computation, Information and Technology, Munich, Germany","institution_ids":["https://openalex.org/I62916508"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5021276636","display_name":"Avinash Lahgere","orcid":"https://orcid.org/0000-0003-1440-0841"},"institutions":[{"id":"https://openalex.org/I94234084","display_name":"Indian Institute of Technology Kanpur","ror":"https://ror.org/05pjsgx75","country_code":"IN","type":"education","lineage":["https://openalex.org/I94234084"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Avinash Lahgere","raw_affiliation_strings":["Department of Electrical Engineering, Indian Institute of Technology (IIT), Kanpur, India"],"raw_orcid":"https://orcid.org/0000-0003-1440-0841","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Indian Institute of Technology (IIT), Kanpur, India","institution_ids":["https://openalex.org/I94234084"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3075,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.59474305,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":"75","issue":"3","first_page":"1197","last_page":"1208"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.00019999999494757503,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11176","display_name":"Radiation Therapy and Dosimetry","score":9.999999747378752e-05,"subfield":{"id":"https://openalex.org/subfields/2740","display_name":"Pulmonary and Respiratory Medicine"},"field":{"id":"https://openalex.org/fields/27","display_name":"Medicine"},"domain":{"id":"https://openalex.org/domains/4","display_name":"Health Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7785000205039978},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6966000199317932},{"id":"https://openalex.org/keywords/dissipation","display_name":"Dissipation","score":0.536899983882904},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4778999984264374},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.4632999897003174},{"id":"https://openalex.org/keywords/upset","display_name":"Upset","score":0.4415000081062317},{"id":"https://openalex.org/keywords/waveform","display_name":"Waveform","score":0.427700012922287},{"id":"https://openalex.org/keywords/noise-margin","display_name":"Noise margin","score":0.3982999920845032},{"id":"https://openalex.org/keywords/radiation","display_name":"Radiation","score":0.37940001487731934},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.37630000710487366}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7785000205039978},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6966000199317932},{"id":"https://openalex.org/C135402231","wikidata":"https://www.wikidata.org/wiki/Q898440","display_name":"Dissipation","level":2,"score":0.536899983882904},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4778999984264374},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.4632999897003174},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4571000039577484},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.451200008392334},{"id":"https://openalex.org/C2778002589","wikidata":"https://www.wikidata.org/wiki/Q2406791","display_name":"Upset","level":2,"score":0.4415000081062317},{"id":"https://openalex.org/C197424946","wikidata":"https://www.wikidata.org/wiki/Q1165717","display_name":"Waveform","level":3,"score":0.427700012922287},{"id":"https://openalex.org/C179499742","wikidata":"https://www.wikidata.org/wiki/Q1324892","display_name":"Noise margin","level":4,"score":0.3982999920845032},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.37940001487731934},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.37630000710487366},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.37599998712539673},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.36390000581741333},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3555999994277954},{"id":"https://openalex.org/C2780073065","wikidata":"https://www.wikidata.org/wiki/Q1476733","display_name":"Single event upset","level":3,"score":0.35199999809265137},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3411000072956085},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.33640000224113464},{"id":"https://openalex.org/C117551214","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Low-power electronics","level":4,"score":0.32429999113082886},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.3203999996185303},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.3046000003814697},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.29919999837875366},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2976999878883362},{"id":"https://openalex.org/C65655974","wikidata":"https://www.wikidata.org/wiki/Q14867674","display_name":"Swing","level":2,"score":0.29249998927116394},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.2924000024795532},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.29030001163482666},{"id":"https://openalex.org/C151337348","wikidata":"https://www.wikidata.org/wiki/Q215313","display_name":"Absorbed dose","level":3,"score":0.28519999980926514},{"id":"https://openalex.org/C194080101","wikidata":"https://www.wikidata.org/wiki/Q46306","display_name":"Access time","level":2,"score":0.2822999954223633},{"id":"https://openalex.org/C90201813","wikidata":"https://www.wikidata.org/wiki/Q202957","display_name":"Schmitt trigger","level":3,"score":0.27549999952316284},{"id":"https://openalex.org/C119349744","wikidata":"https://www.wikidata.org/wiki/Q3026015","display_name":"Radiation hardening","level":3,"score":0.27239999175071716},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.2709999978542328},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.26750001311302185},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.26579999923706055},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2605000138282776},{"id":"https://openalex.org/C2778309119","wikidata":"https://www.wikidata.org/wiki/Q5121614","display_name":"Circuit reliability","level":4,"score":0.2524000108242035}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tc.2025.3649150","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tc.2025.3649150","pdf_url":null,"source":{"id":"https://openalex.org/S157670870","display_name":"IEEE Transactions on Computers","issn_l":"0018-9340","issn":["0018-9340","0016-9340","1557-9956","2326-3814"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Computers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5714150071144104,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G1618683463","display_name":null,"funder_award_id":"AM 534/5-1","funder_id":"https://openalex.org/F4320320879","funder_display_name":"Deutsche Forschungsgemeinschaft"},{"id":"https://openalex.org/G286858420","display_name":null,"funder_award_id":"2024/INTW/05","funder_id":"https://openalex.org/F461701984","funder_display_name":"Indian National Academy of Engineering"},{"id":"https://openalex.org/G2887952335","display_name":null,"funder_award_id":"CRG/2023/003715","funder_id":"https://openalex.org/F4320334771","funder_display_name":"Science and Engineering Research Board"}],"funders":[{"id":"https://openalex.org/F4320320879","display_name":"Deutsche Forschungsgemeinschaft","ror":"https://ror.org/018mejw64"},{"id":"https://openalex.org/F4320334771","display_name":"Science and Engineering Research Board","ror":"https://ror.org/03ffdsr55"},{"id":"https://openalex.org/F461701984","display_name":"Indian National Academy of Engineering","ror":"https://ror.org/05arvb276"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":34,"referenced_works":["https://openalex.org/W1967104431","https://openalex.org/W1973839642","https://openalex.org/W2002612140","https://openalex.org/W2030702052","https://openalex.org/W2073062293","https://openalex.org/W2087974539","https://openalex.org/W2097506792","https://openalex.org/W2141415096","https://openalex.org/W2144154842","https://openalex.org/W2245359636","https://openalex.org/W2615230521","https://openalex.org/W2767511554","https://openalex.org/W2898167007","https://openalex.org/W2905789341","https://openalex.org/W2981782538","https://openalex.org/W3035425879","https://openalex.org/W3039323780","https://openalex.org/W3081672332","https://openalex.org/W3175294142","https://openalex.org/W3178088256","https://openalex.org/W4200238356","https://openalex.org/W4210321845","https://openalex.org/W4213422557","https://openalex.org/W4286571890","https://openalex.org/W4312050570","https://openalex.org/W4379033988","https://openalex.org/W4385259426","https://openalex.org/W4386261661","https://openalex.org/W4390045069","https://openalex.org/W4390414948","https://openalex.org/W4392007377","https://openalex.org/W4394002450","https://openalex.org/W4409356500","https://openalex.org/W4410226660"],"related_works":[],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3,17,89],"present":[4,18],"single-event":[5],"upset":[6],"(SEU)":[7],"analysis":[8,24,46],"for":[9,29,43,62,127,205],"Forksheet":[10],"FET":[11],"(FSFET)":[12],"based":[13,34],"CMOS":[14,68],"circuits.":[15],"Next,":[16],"an":[19],"array-level":[20],"power":[21,184],"and":[22,36,57,81,124,129,143,145,154,175,189,197,208,214,219,224],"performance":[23],"along":[25],"with":[26,169],"the":[27,30,63,87,91,99,106,113,146,164,187,202],"Vminevaluation":[28],"FSFET-based":[31],"SRAM.":[32],"Physics":[33],"TCAD":[35],"industry-standard":[37],"BSIM-CMG":[38],"compact":[39],"models":[40],"are":[41,102,211,222],"calibrated":[42],"accurate":[44],"circuit":[45,114],"in":[47,75,116],"SPICE.":[48],"The":[49,65,137,157,216],"impact":[50],"of":[51,67,77,135],"varying":[52],"Heavy-Ion":[53],"Radiation":[54],"(HIR)":[55],"doses":[56],"strike":[58],"orientations":[59],"is":[60,72,192],"investigated":[61],"FSFETs.":[64],"robustness":[66],"inverter":[69],"against":[70],"HIR":[71],"also":[73,139,150],"reported":[74],"terms":[76],"failure":[78],"time":[79],"(tfail)":[80],"output":[82],"voltage":[83,179],"swing":[84],"($\u0394$VDrop).":[85],"For":[86,97],"SRAM,":[88],"determine":[90],"critical":[92,148],"Linear":[93],"Energy":[94],"Transfer":[95],"(LET).":[96],"FSFET,":[98],"individual":[100],"n-/p-FETs":[101],"more":[103],"vulnerable":[104],"to":[105,118],"irradiation":[107],"incident":[108],"on":[109],"nearby":[110],"devices.":[111],"At":[112,200],"level,":[115],"comparison":[117],"perpendicular":[119],"strikes,":[120],"the$\u0394$VDropincreases":[121],"by":[122,141,152],"1.25V":[123],"2.75V":[125],"respectively,":[126],"oblique":[128],"transverse":[130],"incidences,":[131],"at":[132],"a":[133],"dose":[134],"2.0MeVcm2/mg.":[136],"tfail":[138],"increases":[140],"43%":[142],"60%":[144],"SRAM":[147,160,183],"LET":[149],"decreases":[151],"85%":[153],"57.5%,":[155],"respectively.":[156,199,226],"array":[158],"level":[159],"evaluation":[161],"shows":[162],"that":[163],"FSFET":[165,182],"enables":[166],"reliable":[167],"operation":[168],"low-power":[170],"consumption,":[171],"impressive":[172],"noise":[173,203],"margins,":[174],"low":[176,194],"minimum":[177],"operating":[178],"(Vmin)":[180],"values.":[181],"dissipation":[185],"during":[186],"read":[188,218],"write":[190,209,220],"operations":[191,210,221],"as":[193,195],"7.02$\u03bc$W,":[196],"3.00$\u03bc$W":[198],"VDD=0.70V,":[201],"margins":[204],"hold,":[206],"read,":[207],"289.27mV,":[212],"122.89mV,":[213],"297.79mV.":[215],"Vminfor":[217],"0.30V":[223],"0.35V":[225]},"counts_by_year":[{"year":2026,"cited_by_count":1}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-12-29T00:00:00"}