{"id":"https://openalex.org/W4405232134","doi":"https://doi.org/10.1109/taes.2024.3514604","title":"Design and Evaluation of a Radiation-Hardened FDSOI SRAM With High-Reliable Elements and Power Management Circuits for Space Application","display_name":"Design and Evaluation of a Radiation-Hardened FDSOI SRAM With High-Reliable Elements and Power Management Circuits for Space Application","publication_year":2024,"publication_date":"2024-12-10","ids":{"openalex":"https://openalex.org/W4405232134","doi":"https://doi.org/10.1109/taes.2024.3514604"},"language":"en","primary_location":{"id":"doi:10.1109/taes.2024.3514604","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2024.3514604","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004629662","display_name":"Chang Cai","orcid":"https://orcid.org/0000-0001-6624-8998"},"institutions":[{"id":"https://openalex.org/I37987034","display_name":"Guangzhou University","ror":"https://ror.org/05ar8rn06","country_code":"CN","type":"education","lineage":["https://openalex.org/I37987034"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Chang Cai","raw_affiliation_strings":["School of Physics and Materials Science, Guangzhou University, Guangzhou, China"],"affiliations":[{"raw_affiliation_string":"School of Physics and Materials Science, Guangzhou University, Guangzhou, China","institution_ids":["https://openalex.org/I37987034"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110722488","display_name":"Minchi Hu","orcid":"https://orcid.org/0009-0002-3316-8005"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Minchi Hu","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Lei Shen","orcid":"https://orcid.org/0009-0000-3191-0312"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Lei Shen","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China","State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Jun Yu","orcid":"https://orcid.org/0009-0003-9923-4762"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Yu","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China","State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]},{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]},{"author_position":"last","author":{"id":null,"display_name":"Gengsheng Chen","orcid":"https://orcid.org/0000-0001-5377-0410"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Gengsheng Chen","raw_affiliation_strings":["State Key Laboratory of ASIC and System, Fudan University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"State Key Laboratory of ASIC and System, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5004629662"],"corresponding_institution_ids":["https://openalex.org/I37987034"],"apc_list":null,"apc_paid":null,"fwci":1.2322,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.80314633,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":97,"max":99},"biblio":{"volume":"61","issue":"2","first_page":"5057","last_page":"5066"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.991599977016449,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.6731257438659668},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5967957973480225},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.5878578424453735},{"id":"https://openalex.org/keywords/space-technology","display_name":"Space technology","score":0.5468714237213135},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5074905753135681},{"id":"https://openalex.org/keywords/space-radiation","display_name":"Space radiation","score":0.46161943674087524},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44768500328063965},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.447620153427124},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.42846202850341797},{"id":"https://openalex.org/keywords/space","display_name":"Space (punctuation)","score":0.42798030376434326},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.388838529586792},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.15990355610847473},{"id":"https://openalex.org/keywords/aerospace-engineering","display_name":"Aerospace engineering","score":0.09212461113929749}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.6731257438659668},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5967957973480225},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.5878578424453735},{"id":"https://openalex.org/C77304879","wikidata":"https://www.wikidata.org/wiki/Q211485","display_name":"Space technology","level":2,"score":0.5468714237213135},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5074905753135681},{"id":"https://openalex.org/C2987978230","wikidata":"https://www.wikidata.org/wiki/Q5691173","display_name":"Space radiation","level":3,"score":0.46161943674087524},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44768500328063965},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.447620153427124},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.42846202850341797},{"id":"https://openalex.org/C2778572836","wikidata":"https://www.wikidata.org/wiki/Q380933","display_name":"Space (punctuation)","level":2,"score":0.42798030376434326},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.388838529586792},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.15990355610847473},{"id":"https://openalex.org/C146978453","wikidata":"https://www.wikidata.org/wiki/Q3798668","display_name":"Aerospace engineering","level":1,"score":0.09212461113929749},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C44870925","wikidata":"https://www.wikidata.org/wiki/Q37547","display_name":"Astrophysics","level":1,"score":0.0},{"id":"https://openalex.org/C111309251","wikidata":"https://www.wikidata.org/wiki/Q11547","display_name":"Cosmic ray","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/taes.2024.3514604","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2024.3514604","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8299999833106995,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G488818869","display_name":null,"funder_award_id":"12205052","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W2018918975","https://openalex.org/W2038213992","https://openalex.org/W2103902557","https://openalex.org/W2182767698","https://openalex.org/W2553657511","https://openalex.org/W2553836930","https://openalex.org/W2737640031","https://openalex.org/W2784101586","https://openalex.org/W2897553417","https://openalex.org/W2901644239","https://openalex.org/W2942269937","https://openalex.org/W2989781809","https://openalex.org/W2989953393","https://openalex.org/W3009923821","https://openalex.org/W3046689170","https://openalex.org/W3110013108","https://openalex.org/W3142254395","https://openalex.org/W3183195571","https://openalex.org/W3210555330","https://openalex.org/W4224224886","https://openalex.org/W4285788866","https://openalex.org/W4310585442","https://openalex.org/W4310855641","https://openalex.org/W4312856321","https://openalex.org/W4386824829","https://openalex.org/W6754340931"],"related_works":["https://openalex.org/W4392590355","https://openalex.org/W3151633427","https://openalex.org/W2212894501","https://openalex.org/W2793465010","https://openalex.org/W3024050170","https://openalex.org/W1976168335","https://openalex.org/W3215142653","https://openalex.org/W2164436629","https://openalex.org/W2113013157","https://openalex.org/W1981576225"],"abstract_inverted_index":{"Designing":[0],"a":[1,6,42,139,151],"radiation-tolerant":[2,43],"SRAM-based":[3],"system":[4],"poses":[5],"significant":[7],"challenge":[8],"for":[9,36,82,186,199],"space":[10],"facilities":[11],"operating":[12],"in":[13,119,145,154],"radiation":[14,164,194,212],"environments.":[15],"Accurate":[16],"evaluation":[17],"of":[18,25,116,178,214],"SEE":[19,136],"sensitivity,":[20],"along":[21],"with":[22,46],"the":[23,66,83,114,120,146,176,179,187,204,211,215],"design":[24],"radiation-hardened":[26],"memory":[27],"cells":[28],"and":[29,174,196],"power":[30],"management":[31],"circuits":[32,51,134],"is":[33,167],"crucial,":[34],"particularly":[35],"advanced":[37],"nanotechnologies.":[38],"In":[39],"this":[40],"article,":[41],"FDSOI":[44],"SRAM":[45,85,201],"two":[47,132],"switchable":[48],"bandgap":[49,68,97,122,159,189],"reference":[50,69,98,123,133,160,180,190],"was":[52,62,87],"designed.":[53],"An":[54],"additional":[55],"single":[56,77,100],"event":[57,78,101],"effects":[58],"(SEE)-hardened":[59],"selection":[60],"circuit":[61,124,161,191],"used":[63],"to":[64,150],"enable":[65],"targeted":[67],"circuits.":[70],"The":[71,95,130,157,182],"\u223c3":[72],"\u00d7":[73],"10\u221214":[74],"cm2/bit":[75],"saturated":[76],"upsets":[79],"cross":[80,104],"section":[81],"hardened":[84],"device":[86],"measured":[88],"by":[89,108],"our":[90,128],"heavy":[91],"ion":[92],"irradiation":[93],"test.":[94],"bipolar":[96,121,147,188],"circuit-induced":[99],"transients":[102,118,141],"(SET)":[103],"sections":[105],"were":[106,125],"confirmed":[107],"comparing":[109],"different":[110],"test":[111],"modes.":[112],"Besides,":[113],"features":[115],"181Ta-induced":[117],"captured":[126],"during":[127],"experiments.":[129],"designed":[131],"exhibit":[135],"tolerance,":[137],"although":[138],"few":[140],"can":[142,208],"be":[143],"observed":[144],"circuit,":[148],"leading":[149],"\u223c30%":[152],"increase":[153],"output":[155],"voltage.":[156,181],"MOS":[158,206],"exhibits":[162],"strong":[163],"resistance":[165],"but":[166],"slightly":[168],"inferior":[169],"at":[170],"controlling":[171],"temperature":[172],"drift":[173],"maintaining":[175],"stability":[177],"SET":[183],"measurement":[184],"results":[185],"reveal":[192],"specific":[193],"sensitivity":[195],"potential":[197],"risks":[198],"high-reliable":[200],"systems,":[202],"whereas":[203],"full":[205],"structure":[207],"further":[209],"enhance":[210],"tolerance":[213],"entire":[216],"system.":[217]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":4}],"updated_date":"2026-04-09T08:11:56.329763","created_date":"2025-10-10T00:00:00"}