{"id":"https://openalex.org/W4313172753","doi":"https://doi.org/10.1109/taes.2022.3210079","title":"Pseudo-Symmetric Enclosed Layout Transistors for Radiation Hardened Analog Applications","display_name":"Pseudo-Symmetric Enclosed Layout Transistors for Radiation Hardened Analog Applications","publication_year":2022,"publication_date":"2022-01-01","ids":{"openalex":"https://openalex.org/W4313172753","doi":"https://doi.org/10.1109/taes.2022.3210079"},"language":"en","primary_location":{"id":"doi:10.1109/taes.2022.3210079","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2022.3210079","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5057011231","display_name":"Gustavo. P. Platcheck","orcid":null},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":true,"raw_author_name":"Gustavo. P. Platcheck","raw_affiliation_strings":["Universidade Federal do Rio Grande do Sul - Programa de P&#x00F3;s-Gradua&#x00E7;&#x00E3;o em Microeletr&#x00F4;nica - PGMICRO Porto Alegre - RS, Brazil"],"affiliations":[{"raw_affiliation_string":"Universidade Federal do Rio Grande do Sul - Programa de P&#x00F3;s-Gradua&#x00E7;&#x00E3;o em Microeletr&#x00F4;nica - PGMICRO Porto Alegre - RS, Brazil","institution_ids":["https://openalex.org/I130442723"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5041633774","display_name":"G. S. Cardoso","orcid":"https://orcid.org/0000-0003-2197-0906"},"institutions":[{"id":"https://openalex.org/I4210155777","display_name":"Instituto Federal Sul-rio-grandense","ror":"https://ror.org/05dr32318","country_code":"BR","type":"education","lineage":["https://openalex.org/I4210155777"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"G. S. Cardoso","raw_affiliation_strings":["Instituto Federal de Educa&#x00E7;&#x00E3;o, Ci&#x00EA;ncia e Tecnologia Sul-rio-grandense, Brazil"],"affiliations":[{"raw_affiliation_string":"Instituto Federal de Educa&#x00E7;&#x00E3;o, Ci&#x00EA;ncia e Tecnologia Sul-rio-grandense, Brazil","institution_ids":["https://openalex.org/I4210155777"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042649608","display_name":"Tiago R. Balen","orcid":"https://orcid.org/0000-0001-9641-300X"},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Tiago R. Balen","raw_affiliation_strings":["Universidade Federal do Rio Grande do Sul - Programa de P&#x00F3;s-Gradua&#x00E7;&#x00E3;o em Microeletr&#x00F4;nica - PGMICRO Porto Alegre - RS, Brazil"],"affiliations":[{"raw_affiliation_string":"Universidade Federal do Rio Grande do Sul - Programa de P&#x00F3;s-Gradua&#x00E7;&#x00E3;o em Microeletr&#x00F4;nica - PGMICRO Porto Alegre - RS, Brazil","institution_ids":["https://openalex.org/I130442723"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5057011231"],"corresponding_institution_ids":["https://openalex.org/I130442723"],"apc_list":null,"apc_paid":null,"fwci":0.3682,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.58539199,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7343906164169312},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.6051201820373535},{"id":"https://openalex.org/keywords/enhanced-data-rates-for-gsm-evolution","display_name":"Enhanced Data Rates for GSM Evolution","score":0.49174240231513977},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4838513433933258},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.399445116519928},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39131030440330505},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36875373125076294},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26050466299057007},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.22505101561546326},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.17871764302253723}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7343906164169312},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.6051201820373535},{"id":"https://openalex.org/C162307627","wikidata":"https://www.wikidata.org/wiki/Q204833","display_name":"Enhanced Data Rates for GSM Evolution","level":2,"score":0.49174240231513977},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4838513433933258},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.399445116519928},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39131030440330505},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36875373125076294},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26050466299057007},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.22505101561546326},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.17871764302253723},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/taes.2022.3210079","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2022.3210079","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.5,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1974332486","https://openalex.org/W2029159365","https://openalex.org/W2042179570","https://openalex.org/W2074477141","https://openalex.org/W2133831885","https://openalex.org/W2134165724","https://openalex.org/W2148071019","https://openalex.org/W2318626335","https://openalex.org/W2328899558","https://openalex.org/W2757341617","https://openalex.org/W2897420165","https://openalex.org/W3084761635","https://openalex.org/W3157131883","https://openalex.org/W4224272906"],"related_works":["https://openalex.org/W3014521742","https://openalex.org/W2507864527","https://openalex.org/W2347585086","https://openalex.org/W2617868873","https://openalex.org/W3204141294","https://openalex.org/W1527953837","https://openalex.org/W2042100038","https://openalex.org/W1559639976","https://openalex.org/W2109445684","https://openalex.org/W2156154954"],"abstract_inverted_index":{"The":[0,38,143],"enclosed":[1,114],"layout":[2,115,128,167],"transistor":[3],"is":[4,141],"an":[5],"alternative":[6],"to":[7,62,101,119,125,164],"reduce":[8],"the":[9,28,73,87,97,103,126,175,179,183],"radiation":[10,82],"sensitivity":[11],"of":[12,30,33,43,75,96,113,178],"CMOS":[13],"devices":[14,34,116,144],"by":[15],"avoiding":[16],"thick":[17],"field":[18],"oxide":[19],"paths":[20],"between":[21,48,174],"source":[22,49],"and":[23,50,58,137,155,182],"drain":[24],"terminals.":[25],"This":[26,130],"prevents":[27],"increase":[29],"leakage":[31],"current":[32],"working":[35],"under":[36],"radiation.":[37],"commonly":[39],"adopted":[40],"square":[41],"geometry":[42],"this":[44,70,106],"design":[45,79,138],"brings":[46],"asymmetry":[47],"drain,":[51],"modifying":[52],"characteristics":[53,124],"such":[54],"as":[55,161,163],"output":[56],"conductance":[57],"capacitance,":[59],"if":[60,86],"compared":[61,156],"a":[63,77,81,110,148,171],"traditional":[64],"layout.":[65],"Therefore,":[66],"considering":[67],"analog":[68],"designs,":[69],"may":[71],"complicate":[72],"process":[74],"mapping":[76],"non-hardened":[78],"onto":[80],"tolerant":[83],"version,":[84],"even":[85],"aspect":[88],"ratios":[89],"(":[90],"<inline-formula":[91],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[92],"xmlns:xlink=\"http://www.w3.org/1999/xlink\"><tex-math":[93],"notation=\"LaTeX\">$W/L$</tex-math></inline-formula>":[94],")":[95],"transistors":[98],"are":[99],"designed":[100],"be":[102],"same.":[104],"In":[105],"paper,":[107],"we":[108],"propose":[109],"pseudo-symmetric":[111,180],"version":[112],"in":[117,147],"order":[118],"better":[120],"approximate":[121],"its":[122],"electrical":[123],"conventional":[127,165],"style.":[129],"way,":[131],"no":[132],"significant":[133],"modification":[134],"on":[135],"simulation":[136],"validation":[139],"flow":[140],"necessary.":[142],"were":[145],"fabricated":[146],"130":[149],"nm":[150],"process,":[151],"being":[152],"then":[153],"characterized":[154],"with":[157],"regular":[158],"(non-symmetric)":[159],"ELTs":[160,181],"well":[162],"(two-edge)":[166],"transistors.":[168],"Results":[169],"show":[170],"good":[172],"agreement":[173],"tested":[176],"parameters":[177],"correspondent":[184],"two-edge":[185],"devices.":[186]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":1}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}