{"id":"https://openalex.org/W4285821154","doi":"https://doi.org/10.1109/taes.2022.3191296","title":"A 15 V-Tolerant and Radiation-Hardened MOSFET Driver With Positive and Negative References","display_name":"A 15 V-Tolerant and Radiation-Hardened MOSFET Driver With Positive and Negative References","publication_year":2022,"publication_date":"2022-01-01","ids":{"openalex":"https://openalex.org/W4285821154","doi":"https://doi.org/10.1109/taes.2022.3191296"},"language":"en","primary_location":{"id":"doi:10.1109/taes.2022.3191296","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2022.3191296","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051946435","display_name":"Xin Lei","orcid":"https://orcid.org/0000-0003-0474-1714"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xin Lei","raw_affiliation_strings":["Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), China"],"raw_orcid":"https://orcid.org/0000-0003-0474-1714","affiliations":[{"raw_affiliation_string":"Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), China","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087143918","display_name":"Xingguo Gao","orcid":"https://orcid.org/0000-0002-8111-774X"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xingguo Gao","raw_affiliation_strings":["IC Design Center of SISC, Chongqing, China"],"raw_orcid":"https://orcid.org/0000-0002-8111-774X","affiliations":[{"raw_affiliation_string":"IC Design Center of SISC, Chongqing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102791582","display_name":"Jun Deng","orcid":"https://orcid.org/0000-0002-2881-9689"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jun Deng","raw_affiliation_strings":["Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), China"],"raw_orcid":"https://orcid.org/0000-0002-2881-9689","affiliations":[{"raw_affiliation_string":"Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), China","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066167604","display_name":"Zhou Shu","orcid":"https://orcid.org/0000-0003-0976-1263"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhou Shu","raw_affiliation_strings":["Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), China"],"raw_orcid":"https://orcid.org/0000-0003-0976-1263","affiliations":[{"raw_affiliation_string":"Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), China","institution_ids":["https://openalex.org/I158842170"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009032084","display_name":"Fang Tang","orcid":"https://orcid.org/0000-0003-2453-4878"},"institutions":[{"id":"https://openalex.org/I158842170","display_name":"Chongqing University","ror":"https://ror.org/023rhb549","country_code":"CN","type":"education","lineage":["https://openalex.org/I158842170"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fang Tang","raw_affiliation_strings":["Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), China"],"raw_orcid":"https://orcid.org/0000-0003-2453-4878","affiliations":[{"raw_affiliation_string":"Chongqing Engineering Laboratory of High Performance Integrated Circuits, School of Microelectronics and Communication Engineering, Chongqing University (CQU), China","institution_ids":["https://openalex.org/I158842170"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.3534,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.55130456,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.624660313129425},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6169067621231079},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6016175746917725},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5152176022529602},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5104547739028931},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.47709518671035767},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.47492629289627075},{"id":"https://openalex.org/keywords/high-voltage","display_name":"High voltage","score":0.42470765113830566},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.359516978263855},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22068077325820923}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.624660313129425},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6169067621231079},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6016175746917725},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5152176022529602},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5104547739028931},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.47709518671035767},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.47492629289627075},{"id":"https://openalex.org/C88182573","wikidata":"https://www.wikidata.org/wiki/Q1139740","display_name":"High voltage","level":3,"score":0.42470765113830566},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.359516978263855},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22068077325820923}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/taes.2022.3191296","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2022.3191296","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8700000047683716}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1593408479","https://openalex.org/W1977090339","https://openalex.org/W1999216237","https://openalex.org/W2006572238","https://openalex.org/W2100151841","https://openalex.org/W2102327177","https://openalex.org/W2122144137","https://openalex.org/W2135492762","https://openalex.org/W2136895682","https://openalex.org/W2137729737","https://openalex.org/W2161732889","https://openalex.org/W2170204721","https://openalex.org/W2545433191","https://openalex.org/W2557790515","https://openalex.org/W2706949408","https://openalex.org/W2764252864","https://openalex.org/W2769084524","https://openalex.org/W2774426090","https://openalex.org/W2943828561","https://openalex.org/W3058064753","https://openalex.org/W3088372863","https://openalex.org/W3188821611"],"related_works":["https://openalex.org/W2521656715","https://openalex.org/W2104615293","https://openalex.org/W1742453416","https://openalex.org/W1557535892","https://openalex.org/W2006330903","https://openalex.org/W1577267070","https://openalex.org/W1643664280","https://openalex.org/W2365537356","https://openalex.org/W2160490486","https://openalex.org/W2101797444"],"abstract_inverted_index":{"Radiation-hardened":[0],"and":[1,25,56,142,166],"high-voltage":[2,78,112],"power":[3,33],"circuits":[4,35],"are":[5],"key":[6],"components":[7],"in":[8,36,121,144],"aerospace":[9],"applications.":[10],"However,":[11],"when":[12],"working":[13],"at":[14],"high":[15],"voltages,":[16],"the":[17,20,26,30,61,66,73,95,109,122,127,156],"effects":[18],"of":[19,32,65,75,111,160],"total":[21],"ionizing":[22],"dose":[23],"(TID)":[24],"single":[27,210,214,220],"event":[28,211,215,221],"limit":[29],"application":[31],"driving":[34],"a":[37,99,145,201],"radiation":[38],"environment.":[39],"A":[40],"15":[41],"V-tolerant":[42],"radiation-hardened":[43],"MOSFET":[44],"driver":[45,96,123,178,199],"was":[46,179],"designed.":[47],"The":[48,151,194],"circuit":[49],"architecture,":[50],"which":[51],"is":[52],"based":[53],"on":[54],"positive":[55],"negative":[57],"references,":[58],"can":[59],"reduce":[60],"gate":[62,216],"source":[63],"voltage":[64],"transistors":[67,93,120,169],"to":[68,97,102,124],"less":[69],"than":[70],"5&#x00A0;V,":[71],"allowing":[72],"selection":[74],"thin-gate":[76],"oxide":[77,90,117],"transistors.":[79],"On":[80],"this":[81,106,177,198],"basis,":[82],"adopting":[83],"enclosed":[84],"layout":[85,110],"transistor":[86],"(ELT)":[87],"N-channel":[88],"metal":[89,116],"semiconductor":[91,118],"(NMOS)":[92],"helps":[94],"obtain":[98],"good":[100],"resilience":[101],"TID":[103,157],"hardness.":[104],"Additionally,":[105],"work":[107],"optimized":[108],"N-type":[113,136],"laterally":[114],"diffused":[115],"(LDMOS)":[119],"effectively":[125],"improve":[126],"single-event":[128],"burnout":[129,222],"(SEB)":[130,223],"threshold.":[131],"Three":[132],"chips":[133,162],"with":[134,163,185,200],"different":[135],"drift":[137,205],"region":[138,206],"lengths":[139],"were":[140],"designed":[141],"fabricated":[143],"0.35&#x00A0;<inline-formula><tex-math":[146],"notation=\"LaTeX\">$\\mu":[147,203],"m$</tex-math></inline-formula>":[148,204],"BCD":[149],"process.":[150],"test":[152],"results":[153,195],"showed":[154],"that":[155,197],"hardening":[158],"capability":[159],"these":[161],"ZENER":[164],"references":[165],"ELT":[167],"NMOS":[168],"all":[170],"exceeded":[171],"100":[172],"krad":[173],"(Si).":[174],"In":[175],"addition,":[176],"tested":[180],"under":[181],"heavy":[182],"ion":[183],"irradiation":[184],"linear":[186],"energy":[187],"transfer":[188],"(LET)":[189],"exceeding":[190],"75":[191],"MeV&#x00B7;<inline-formula><tex-math":[192],"notation=\"LaTeX\">$\\dot\\mathrm{{c}}{\\mathrm{{m}}^{2}}\\mathrm{{/mg}}$</tex-math></inline-formula>.":[193],"show":[196],"6.6&#x00A0;<inline-formula><tex-math":[202],"length":[207],"had":[208],"no":[209],"latchup":[212],"(SEL),":[213],"rupture":[217],"(SEGR),":[218],"or":[219],"sensitivity.":[224]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4}],"updated_date":"2026-03-27T05:58:40.876381","created_date":"2025-10-10T00:00:00"}