{"id":"https://openalex.org/W2889173475","doi":"https://doi.org/10.1109/taes.2018.2867245","title":"Annual Deep-Space Flight Operation Verification of X-Band GaN SSPA","display_name":"Annual Deep-Space Flight Operation Verification of X-Band GaN SSPA","publication_year":2018,"publication_date":"2018-08-28","ids":{"openalex":"https://openalex.org/W2889173475","doi":"https://doi.org/10.1109/taes.2018.2867245","mag":"2889173475"},"language":"en","primary_location":{"id":"doi:10.1109/taes.2018.2867245","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2018.2867245","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"https://repository.exst.jaxa.jp/dspace/handle/a-is/936348","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5103237742","display_name":"Yuta Kobayashi","orcid":"https://orcid.org/0000-0001-5274-8932"},"institutions":[{"id":"https://openalex.org/I2800865746","display_name":"Japan Aerospace Exploration Agency","ror":"https://ror.org/059yhyy33","country_code":"JP","type":"facility","lineage":["https://openalex.org/I2800865746"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Yuta Kobayashi","raw_affiliation_strings":["Japan Aerospace Exploration Agency, Tsukuba, Japan"],"affiliations":[{"raw_affiliation_string":"Japan Aerospace Exploration Agency, Tsukuba, Japan","institution_ids":["https://openalex.org/I2800865746"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002045054","display_name":"Atsushi Tomiki","orcid":null},"institutions":[{"id":"https://openalex.org/I2800865746","display_name":"Japan Aerospace Exploration Agency","ror":"https://ror.org/059yhyy33","country_code":"JP","type":"facility","lineage":["https://openalex.org/I2800865746"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Atsushi Tomiki","raw_affiliation_strings":["Japan Aerospace Exploration Agency, Sagamihara, Japan"],"affiliations":[{"raw_affiliation_string":"Japan Aerospace Exploration Agency, Sagamihara, Japan","institution_ids":["https://openalex.org/I2800865746"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102853568","display_name":"Shigeo Kawasaki","orcid":null},"institutions":[{"id":"https://openalex.org/I2800865746","display_name":"Japan Aerospace Exploration Agency","ror":"https://ror.org/059yhyy33","country_code":"JP","type":"facility","lineage":["https://openalex.org/I2800865746"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shigeo Kawasaki","raw_affiliation_strings":["Japan Aerospace Exploration Agency, Sagamihara, Japan"],"affiliations":[{"raw_affiliation_string":"Japan Aerospace Exploration Agency, Sagamihara, Japan","institution_ids":["https://openalex.org/I2800865746"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5103237742"],"corresponding_institution_ids":["https://openalex.org/I2800865746"],"apc_list":null,"apc_paid":null,"fwci":0.1847,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.56440534,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":95},"biblio":{"volume":"55","issue":"2","first_page":"930","last_page":"938"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11392","display_name":"Energy Harvesting in Wireless Networks","score":0.9965000152587891,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9932000041007996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7763577699661255},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7037695646286011},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6640067100524902},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5877136588096619},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.5072207450866699},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.46735504269599915},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.44181129336357117},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.39462509751319885},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3716587424278259},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.34935128688812256},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13791367411613464}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7763577699661255},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7037695646286011},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6640067100524902},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5877136588096619},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.5072207450866699},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.46735504269599915},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44181129336357117},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.39462509751319885},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3716587424278259},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.34935128688812256},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13791367411613464},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/taes.2018.2867245","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2018.2867245","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"},{"id":"pmh:oai:repository.exst.jaxa.jp:a-is/936348","is_oa":true,"landing_page_url":"https://repository.exst.jaxa.jp/dspace/handle/a-is/936348","pdf_url":null,"source":{"id":"https://openalex.org/S4306400084","display_name":"JAXA Repository (JAXA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I2800865746","host_organization_name":"Japan Aerospace Exploration Agency","host_organization_lineage":["https://openalex.org/I2800865746"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Journal Article"}],"best_oa_location":{"id":"pmh:oai:repository.exst.jaxa.jp:a-is/936348","is_oa":true,"landing_page_url":"https://repository.exst.jaxa.jp/dspace/handle/a-is/936348","pdf_url":null,"source":{"id":"https://openalex.org/S4306400084","display_name":"JAXA Repository (JAXA)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I2800865746","host_organization_name":"Japan Aerospace Exploration Agency","host_organization_lineage":["https://openalex.org/I2800865746"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"Journal Article"},"sustainable_development_goals":[{"score":0.8999999761581421,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":30,"referenced_works":["https://openalex.org/W116849643","https://openalex.org/W217756274","https://openalex.org/W1506302444","https://openalex.org/W1575261588","https://openalex.org/W1993624222","https://openalex.org/W2139996160","https://openalex.org/W2156260630","https://openalex.org/W2325433460","https://openalex.org/W2461137253","https://openalex.org/W2493541700","https://openalex.org/W2503833539","https://openalex.org/W2520863682","https://openalex.org/W2528020601","https://openalex.org/W2528931787","https://openalex.org/W2535352144","https://openalex.org/W2535830632","https://openalex.org/W2601870606","https://openalex.org/W3183679000","https://openalex.org/W4213351891","https://openalex.org/W6604698795","https://openalex.org/W6608705999","https://openalex.org/W6634270656","https://openalex.org/W6682731765","https://openalex.org/W6728320121","https://openalex.org/W6728487732","https://openalex.org/W6728619360","https://openalex.org/W6809127079","https://openalex.org/W7011594169","https://openalex.org/W7017666666","https://openalex.org/W7060975866"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W2559825181","https://openalex.org/W3209950509","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W4313611767","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W4385217635","https://openalex.org/W2613044742"],"abstract_inverted_index":{"An":[0],"X-band,":[1],"Gallium":[2],"nitride":[3],"(GaN)-based":[4],"solid-state":[5],"power":[6,61,64,71,78,95],"amplifier":[7],"(SSPA)":[8],"was":[9,105],"demonstrated":[10],"for":[11,19],"more":[12,107],"than":[13,108],"one":[14,49],"year":[15,50],"in":[16,39],"deep":[17],"space":[18,140],"the":[20,41,44,54,90,98,101,118,134,139,145],"first":[21],"time.":[22],"The":[23],"SSPA":[24,56,146],"consisted":[25],"of":[26,51,72,80,86,93,100,120,144],"three-stage":[27],"amplifiers":[28],"and":[29,43,83,142],"commercial":[30],"off-the-shelf":[31],"(COTS)":[32],"GaN":[33,55,150],"high-electron-mobility":[34],"transistors":[35],"(HEMTs)":[36],"were":[37],"used":[38],"both":[40],"second-":[42],"final-stage":[45],"amplifiers.":[46],"During":[47],"its":[48],"continuous":[52,123],"operation,":[53],"improved":[57],"equivalent":[58],"isotopically":[59],"radiated":[60],"with":[62,117],"low":[63],"consumption":[65,79],"such":[66],"as":[67],"an":[68],"average":[69,77,84],"output":[70,94],"41.7":[73],"dBm":[74],"(14.8":[75],"W),":[76],"43.5":[81],"W,":[82],"efficiency":[85],"33.7%.":[87],"In":[88],"addition,":[89],"deterioration":[91],"rate":[92],"calculated":[96],"from":[97],"inclination":[99],"linear":[102],"approximation":[103],"line":[104],"no":[106],"-0.08":[109],"dB":[110],"per":[111],"year.":[112],"These":[113],"results":[114,119],"stand":[115],"comparison":[116],"high-temperature,":[121],"long-term":[122],"operation":[124],"test":[125,131],"or":[126],"a":[127,148],"total":[128],"ionizing":[129],"dose":[130],"conducted":[132],"on":[133],"ground.":[135],"This":[136],"paper":[137],"illustrates":[138],"applicability":[141],"reliability":[143],"using":[147],"COTS":[149],"HEMT.":[151]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}