{"id":"https://openalex.org/W2006310828","doi":"https://doi.org/10.1109/taes.2012.6129637","title":"Buck-Converter Design for Power in Plus 275\u00b0C Environments","display_name":"Buck-Converter Design for Power in Plus 275\u00b0C Environments","publication_year":2012,"publication_date":"2012-01-01","ids":{"openalex":"https://openalex.org/W2006310828","doi":"https://doi.org/10.1109/taes.2012.6129637","mag":"2006310828"},"language":"en","primary_location":{"id":"doi:10.1109/taes.2012.6129637","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2012.6129637","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5081949512","display_name":"Vijay Madhuravasal","orcid":null},"institutions":[{"id":"https://openalex.org/I115475287","display_name":"Oklahoma State University","ror":"https://ror.org/01g9vbr38","country_code":"US","type":"education","lineage":["https://openalex.org/I115475287"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"V. Madhuravasal","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USA","Oklahoma State Univ., Stillwater, OK, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USA","institution_ids":["https://openalex.org/I115475287"]},{"raw_affiliation_string":"Oklahoma State Univ., Stillwater, OK, USA","institution_ids":["https://openalex.org/I115475287"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080059551","display_name":"Srinivasan Venkataraman","orcid":"https://orcid.org/0000-0001-8181-6594"},"institutions":[{"id":"https://openalex.org/I115475287","display_name":"Oklahoma State University","ror":"https://ror.org/01g9vbr38","country_code":"US","type":"education","lineage":["https://openalex.org/I115475287"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"S. Venkataraman","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USA","Oklahoma State Univ., Stillwater, OK, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USA","institution_ids":["https://openalex.org/I115475287"]},{"raw_affiliation_string":"Oklahoma State Univ., Stillwater, OK, USA","institution_ids":["https://openalex.org/I115475287"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5063666783","display_name":"C. Hutchens","orcid":"https://orcid.org/0009-0003-3411-8701"},"institutions":[{"id":"https://openalex.org/I115475287","display_name":"Oklahoma State University","ror":"https://ror.org/01g9vbr38","country_code":"US","type":"education","lineage":["https://openalex.org/I115475287"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C. Hutchens","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USA","Oklahoma State Univ., Stillwater, OK, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Oklahoma State University, Stillwater, OK, USA","institution_ids":["https://openalex.org/I115475287"]},{"raw_affiliation_string":"Oklahoma State Univ., Stillwater, OK, USA","institution_ids":["https://openalex.org/I115475287"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5081949512"],"corresponding_institution_ids":["https://openalex.org/I115475287"],"apc_list":null,"apc_paid":null,"fwci":0.2455,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.57768171,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"48","issue":"1","first_page":"304","last_page":"312"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6245936751365662},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.5532848834991455},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.47727981209754944},{"id":"https://openalex.org/keywords/junction-temperature","display_name":"Junction temperature","score":0.46269094944000244},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.46103858947753906},{"id":"https://openalex.org/keywords/jfet","display_name":"JFET","score":0.4164668321609497},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.37646910548210144},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.372835636138916},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.37280508875846863},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.356008380651474},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.32398533821105957},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.24942582845687866},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2269820272922516}],"concepts":[{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6245936751365662},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.5532848834991455},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.47727981209754944},{"id":"https://openalex.org/C167781694","wikidata":"https://www.wikidata.org/wiki/Q6311800","display_name":"Junction temperature","level":3,"score":0.46269094944000244},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.46103858947753906},{"id":"https://openalex.org/C2778484494","wikidata":"https://www.wikidata.org/wiki/Q385520","display_name":"JFET","level":5,"score":0.4164668321609497},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.37646910548210144},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.372835636138916},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.37280508875846863},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.356008380651474},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.32398533821105957},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.24942582845687866},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2269820272922516},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/taes.2012.6129637","is_oa":false,"landing_page_url":"https://doi.org/10.1109/taes.2012.6129637","pdf_url":null,"source":{"id":"https://openalex.org/S193624734","display_name":"IEEE Transactions on Aerospace and Electronic Systems","issn_l":"0018-9251","issn":["0018-9251","1557-9603","2371-9877"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Aerospace and Electronic Systems","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":32,"referenced_works":["https://openalex.org/W1646295768","https://openalex.org/W1704925180","https://openalex.org/W1959212768","https://openalex.org/W2022252444","https://openalex.org/W2031465426","https://openalex.org/W2042718228","https://openalex.org/W2044259979","https://openalex.org/W2047451593","https://openalex.org/W2091109909","https://openalex.org/W2093093270","https://openalex.org/W2095731095","https://openalex.org/W2098121197","https://openalex.org/W2109245245","https://openalex.org/W2109911877","https://openalex.org/W2117681468","https://openalex.org/W2118846667","https://openalex.org/W2123388746","https://openalex.org/W2125722527","https://openalex.org/W2126180885","https://openalex.org/W2126499032","https://openalex.org/W2141670793","https://openalex.org/W2148268988","https://openalex.org/W2150607589","https://openalex.org/W2162624671","https://openalex.org/W2167044511","https://openalex.org/W2168158156","https://openalex.org/W2172277242","https://openalex.org/W2257724536","https://openalex.org/W2490539576","https://openalex.org/W4285719527","https://openalex.org/W6662375786","https://openalex.org/W6723355156"],"related_works":["https://openalex.org/W2997972850","https://openalex.org/W2093561064","https://openalex.org/W2110367235","https://openalex.org/W1608616540","https://openalex.org/W2370339189","https://openalex.org/W2799073410","https://openalex.org/W1536131916","https://openalex.org/W2118054461","https://openalex.org/W2119969520","https://openalex.org/W2480705602"],"abstract_inverted_index":{"The":[0,19,35,102,127,142],"design":[1,22],"and":[2,55,158],"development":[3],"of":[4,12,46,62],"a":[5,38,53,134],"dc":[6,8,40],"to":[7,15,49,52,65,97,111,137],"buck":[9],"converter":[10],"capable":[11],"operating":[13,100],"up":[14],"275\u00b0C":[16],"is":[17,23,75,104,130],"presented.":[18],"control":[20,33,73],"circuitry":[21,74],"based":[24,132],"on":[25,77,106,133],"the":[26,44,60,78,107,118],"vee-square":[27],"(V":[28],"<sup":[29],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[30],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[31],")":[32],"mechanism.":[34],"system":[36,103,128,144],"converts":[37],"raw":[39],"input":[41],"voltage":[42,58],"in":[43,59,148],"range":[45,61],"15":[47],"V":[48,51,64,136,139],"25":[50],"stepped-down":[54],"filtered":[56],"output":[57],"1.5":[63],"18":[66],"V.":[67],"A":[68],"custom":[69],"designed":[70],"user":[71],"programmable":[72],"implemented":[76],"low":[79],"leakage,":[80],"radiation":[81],"tolerant":[82],"silicon-on-insulator":[83],"technology.":[84],"Silicon":[85],"carbide":[86],"junction":[87],"field":[88],"effect":[89],"transistors":[90],"(JFETs)":[91],"are":[92,124],"used":[93],"as":[94],"power":[95],"switches":[96],"sustain":[98],"extreme":[99,149],"temperature.":[101],"prototyped":[105],"aluminum":[108],"nitride":[109],"substrate":[110],"meet":[112],"packaging":[113],"requirements.":[114],"Design":[115],"considerations":[116],"for":[117],"planar":[119],"transformer":[120],"coupled":[121],"gate":[122],"drive":[123],"specifically":[125],"addressed.":[126],"performance":[129],"studied":[131],"20":[135],"3.3":[138],"prototype":[140],"converter.":[141],"demonstrated":[143],"has":[145],"potential":[146],"market":[147],"environment":[150],"applications":[151],"like":[152],"deep":[153,159],"space":[154],"explorations,":[155],"down-hole":[156],"geothermal":[157],"gas":[160],"reservoir":[161],"management,":[162],"etc.":[163]},"counts_by_year":[{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}