{"id":"https://openalex.org/W4312344789","doi":"https://doi.org/10.1109/ssd54932.2022.9955713","title":"Investigation of a new power junctionless MOSFET using 2-D numerical simulation","display_name":"Investigation of a new power junctionless MOSFET using 2-D numerical simulation","publication_year":2022,"publication_date":"2022-05-06","ids":{"openalex":"https://openalex.org/W4312344789","doi":"https://doi.org/10.1109/ssd54932.2022.9955713"},"language":"en","primary_location":{"id":"doi:10.1109/ssd54932.2022.9955713","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ssd54932.2022.9955713","pdf_url":null,"source":{"id":"https://openalex.org/S4363607814","display_name":"2022 19th International Multi-Conference on Systems, Signals & Devices (SSD)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 19th International Multi-Conference on Systems, Signals & Devices (SSD)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088908761","display_name":"Badreddine Zerroumda","orcid":null},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":true,"raw_author_name":"Badreddine Zerroumda","raw_affiliation_strings":["University of Batna 2,Departement of electrical engeneering,Batna,Algeria"],"affiliations":[{"raw_affiliation_string":"University of Batna 2,Departement of electrical engeneering,Batna,Algeria","institution_ids":["https://openalex.org/I162489102"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044226348","display_name":"F. Djeffal","orcid":"https://orcid.org/0000-0003-0742-5864"},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Faycal Djeffal","raw_affiliation_strings":["University of Batna 2,Departement of electrical engeneering,Batna,Algeria"],"affiliations":[{"raw_affiliation_string":"University of Batna 2,Departement of electrical engeneering,Batna,Algeria","institution_ids":["https://openalex.org/I162489102"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007187266","display_name":"S. Benaggoune","orcid":"https://orcid.org/0000-0002-6507-7004"},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Said Benaggoune","raw_affiliation_strings":["University of Batna 2,Advanved electronics laboratory (LEA),Departement of electronics,Batna,Algeria"],"affiliations":[{"raw_affiliation_string":"University of Batna 2,Advanved electronics laboratory (LEA),Departement of electronics,Batna,Algeria","institution_ids":["https://openalex.org/I162489102"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5029535671","display_name":"H. Ferhati","orcid":null},"institutions":[{"id":"https://openalex.org/I162489102","display_name":"University of Batna 1","ror":"https://ror.org/04hrbe508","country_code":"DZ","type":"education","lineage":["https://openalex.org/I162489102"]}],"countries":["DZ"],"is_corresponding":false,"raw_author_name":"Hichem Ferhati","raw_affiliation_strings":["University of Batna 2,Advanved electronics laboratory (LEA),Departement of electronics,Batna,Algeria"],"affiliations":[{"raw_affiliation_string":"University of Batna 2,Advanved electronics laboratory (LEA),Departement of electronics,Batna,Algeria","institution_ids":["https://openalex.org/I162489102"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5088908761"],"corresponding_institution_ids":["https://openalex.org/I162489102"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.21372196,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"566","last_page":"570"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6955975294113159},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.650459885597229},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5282463431358337},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4676100015640259},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4077174961566925},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36119818687438965},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3392777740955353},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16011115908622742},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1474440097808838},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11462515592575073},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09972310066223145},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.09280630946159363}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6955975294113159},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.650459885597229},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5282463431358337},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4676100015640259},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4077174961566925},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36119818687438965},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3392777740955353},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16011115908622742},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1474440097808838},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11462515592575073},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09972310066223145},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.09280630946159363}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/ssd54932.2022.9955713","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ssd54932.2022.9955713","pdf_url":null,"source":{"id":"https://openalex.org/S4363607814","display_name":"2022 19th International Multi-Conference on Systems, Signals & Devices (SSD)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2022 19th International Multi-Conference on Systems, Signals & Devices (SSD)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5600000023841858}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":14,"referenced_works":["https://openalex.org/W1966336310","https://openalex.org/W2011835885","https://openalex.org/W2031710638","https://openalex.org/W2038086701","https://openalex.org/W2104444900","https://openalex.org/W2168218644","https://openalex.org/W2271706785","https://openalex.org/W2296122051","https://openalex.org/W2405219076","https://openalex.org/W2593521019","https://openalex.org/W2745959973","https://openalex.org/W2770271226","https://openalex.org/W2774535886","https://openalex.org/W2809715464"],"related_works":["https://openalex.org/W2906268959","https://openalex.org/W2119123628","https://openalex.org/W2385412623","https://openalex.org/W2082505892","https://openalex.org/W2543878150","https://openalex.org/W2258872751","https://openalex.org/W1566503697","https://openalex.org/W808580226","https://openalex.org/W1556217118","https://openalex.org/W2133198051"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}