{"id":"https://openalex.org/W3022656335","doi":"https://doi.org/10.1109/socc46988.2019.1570555725","title":"A BJT-Based Temperature Sensor in 40-nm CMOS With \u00b10.8\u00b0C(3\u03c3) Untrimmed Inaccuracy","display_name":"A BJT-Based Temperature Sensor in 40-nm CMOS With \u00b10.8\u00b0C(3\u03c3) Untrimmed Inaccuracy","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W3022656335","doi":"https://doi.org/10.1109/socc46988.2019.1570555725","mag":"3022656335"},"language":"en","primary_location":{"id":"doi:10.1109/socc46988.2019.1570555725","is_oa":false,"landing_page_url":"https://doi.org/10.1109/socc46988.2019.1570555725","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 32nd IEEE International System-on-Chip Conference (SOCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006133655","display_name":"Tan\u2010Tan Zhang","orcid":"https://orcid.org/0000-0003-1746-0890"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Tan-Tan Zhang","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),Singapore","Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]},{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5075642035","display_name":"Yuan Gao","orcid":"https://orcid.org/0000-0002-0832-2982"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Yuan Gao","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),Singapore","Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR),Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]},{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0997,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.47520619,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"2019","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.8861374855041504},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.821314811706543},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6665892004966736},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5813741087913513},{"id":"https://openalex.org/keywords/common-emitter","display_name":"Common emitter","score":0.5621556043624878},{"id":"https://openalex.org/keywords/saturation-current","display_name":"Saturation current","score":0.5265054106712341},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.52239990234375},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4989652633666992},{"id":"https://openalex.org/keywords/pull-up-resistor","display_name":"Pull-up resistor","score":0.470292329788208},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4519757926464081},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.44900214672088623},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4200214743614197},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3783666789531708},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3356640338897705},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19083020091056824}],"concepts":[{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.8861374855041504},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.821314811706543},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6665892004966736},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5813741087913513},{"id":"https://openalex.org/C46918542","wikidata":"https://www.wikidata.org/wiki/Q1648344","display_name":"Common emitter","level":2,"score":0.5621556043624878},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.5265054106712341},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.52239990234375},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4989652633666992},{"id":"https://openalex.org/C61818909","wikidata":"https://www.wikidata.org/wiki/Q1987617","display_name":"Pull-up resistor","level":5,"score":0.470292329788208},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4519757926464081},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.44900214672088623},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4200214743614197},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3783666789531708},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3356640338897705},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19083020091056824},{"id":"https://openalex.org/C198521697","wikidata":"https://www.wikidata.org/wiki/Q7142438","display_name":"Pass transistor logic","level":4,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/socc46988.2019.1570555725","is_oa":false,"landing_page_url":"https://doi.org/10.1109/socc46988.2019.1570555725","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 32nd IEEE International System-on-Chip Conference (SOCC)","raw_type":"proceedings-article"},{"id":"mag:3160434528","is_oa":false,"landing_page_url":"https://jglobal.jst.go.jp/en/detail?JGLOBAL_ID=202002277263193494","pdf_url":null,"source":{"id":"https://openalex.org/S4306512817","display_name":"IEEE Conference Proceedings","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"conference"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":null,"raw_source_name":"IEEE Conference Proceedings","raw_type":null}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.9200000166893005}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W649290676","https://openalex.org/W1928916792","https://openalex.org/W1966656109","https://openalex.org/W1969794630","https://openalex.org/W2000350952","https://openalex.org/W2056759044","https://openalex.org/W2090351433","https://openalex.org/W2151555021","https://openalex.org/W2294849710","https://openalex.org/W2523894546","https://openalex.org/W2581188453","https://openalex.org/W6682598532"],"related_works":["https://openalex.org/W148578717","https://openalex.org/W2276150769","https://openalex.org/W1967402852","https://openalex.org/W2185874911","https://openalex.org/W1484949707","https://openalex.org/W1989332603","https://openalex.org/W1485418874","https://openalex.org/W1919724461","https://openalex.org/W74846200","https://openalex.org/W2184349518"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,51,134],"bipolar":[4],"junction":[5],"transistor":[6],"(BJT)":[7],"based":[8],"temperature":[9,81,128],"sensor":[10,122],"in":[11,62,139],"40-nm":[12],"CMOS":[13],"process":[14,43],"with":[15,79],"improved":[16],"untrimmed":[17,108],"accuracy.":[18],"By":[19],"exploiting":[20],"the":[21,30,34,42,60,63,69,73,83,89,99],"relation":[22],"between":[23],"saturation":[24],"current":[25,28,37,65],"and":[26,102],"recombination":[27],"at":[29,114,126],"base":[31,36],"of":[32,45,77,110],"BJT,":[33],"combined":[35],"is":[38,55],"optimized":[39],"to":[40,57,72],"compensate":[41],"spread":[44],"base-emitter":[46],"voltage":[47],"(VBE).":[48],"In":[49],"addition,":[50],"robust":[52],"MOS":[53,85],"resistor":[54,86],"proposed":[56,84],"further":[58],"reduce":[59,88],"variations":[61,90],"collector":[64],"as":[66,68],"well":[67],"VBE.":[70],"Compared":[71],"conventional":[74],"weighted":[75],"combination":[76],"resistors":[78],"complementary":[80],"coefficient,":[82],"can":[87],"by":[91],"3.2\u00d7.":[92],"An":[93],"energy-efficient":[94],"incremental":[95],"ADC":[96],"(IADC)":[97],"digitizes":[98],"temperature-dependent":[100],"VBE":[101],"AVBE.":[103],"The":[104,121],"prototype":[105],"achieves":[106],"an":[107],"inaccuracy":[109],"\u00b10.8":[111],"\u00b0C":[112],"(3\u03c3)":[113],"1":[115],"kSa/s":[116],"over":[117],"-20":[118],"\u00b0C~100":[119],"\u00b0C.":[120],"draws":[123],"11.2":[124],"\u03bcA":[125],"room":[127],"under":[129],"1.2-V":[130],"supply,":[131],"making":[132],"it":[133],"promising":[135],"candidate":[136],"for":[137],"application":[138],"systems-on-chip":[140],"(SoC)":[141],"thermal":[142],"monitoring.":[143]},"counts_by_year":[{"year":2020,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}