{"id":"https://openalex.org/W2608154286","doi":"https://doi.org/10.1109/socc.2016.7905483","title":"Sensitivity analysis for SoC performance benchmark against interconnect parasitic resistance and capacitance beyond 10-nm FinFET technology","display_name":"Sensitivity analysis for SoC performance benchmark against interconnect parasitic resistance and capacitance beyond 10-nm FinFET technology","publication_year":2016,"publication_date":"2016-09-01","ids":{"openalex":"https://openalex.org/W2608154286","doi":"https://doi.org/10.1109/socc.2016.7905483","mag":"2608154286"},"language":"en","primary_location":{"id":"doi:10.1109/socc.2016.7905483","is_oa":false,"landing_page_url":"https://doi.org/10.1109/socc.2016.7905483","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 29th IEEE International System-on-Chip Conference (SOCC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5040351837","display_name":"Motoi Ichihashi","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Motoi Ichihashi","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042960811","display_name":"Jia Zeng","orcid":"https://orcid.org/0009-0007-3906-852X"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jia Zeng","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068352386","display_name":"Cole Zemke","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Cole Zemke","raw_affiliation_strings":["GLOBALFOUNDRIES, Brownsburg, IN"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Brownsburg, IN","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044425088","display_name":"Irene Kong Cheh Lin","orcid":"https://orcid.org/0000-0001-5591-780X"},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Irene Lin","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030741704","display_name":"G. A. Northrop","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Greg Northrop","raw_affiliation_strings":["GLOBALFOUNDRIES, Malta, NY, USA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Malta, NY, USA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110526152","display_name":"Ning Jin","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ning Jin","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA","institution_ids":["https://openalex.org/I35662394"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111832882","display_name":"Jongwook Kye","orcid":null},"institutions":[{"id":"https://openalex.org/I35662394","display_name":"GlobalFoundries (United States)","ror":"https://ror.org/02h0ps145","country_code":"US","type":"company","lineage":["https://openalex.org/I35662394"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jongwook Kye","raw_affiliation_strings":["GLOBALFOUNDRIES, Santa Clara, CA"],"affiliations":[{"raw_affiliation_string":"GLOBALFOUNDRIES, Santa Clara, CA","institution_ids":["https://openalex.org/I35662394"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5040351837"],"corresponding_institution_ids":["https://openalex.org/I35662394"],"apc_list":null,"apc_paid":null,"fwci":0.3675,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.68488633,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"271","last_page":"274"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9980999827384949,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.7492004632949829},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.7273487448692322},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.6935238242149353},{"id":"https://openalex.org/keywords/parasitic-element","display_name":"Parasitic element","score":0.6740368604660034},{"id":"https://openalex.org/keywords/benchmark","display_name":"Benchmark (surveying)","score":0.6031603217124939},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.5962802171707153},{"id":"https://openalex.org/keywords/back-end-of-line","display_name":"Back end of line","score":0.5937652587890625},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5170748829841614},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.4984428882598877},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.40017855167388916},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3915475010871887},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.36115944385528564},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3305564522743225},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.31403598189353943},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.13401028513908386},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.10240226984024048}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.7492004632949829},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.7273487448692322},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.6935238242149353},{"id":"https://openalex.org/C71367568","wikidata":"https://www.wikidata.org/wiki/Q3363655","display_name":"Parasitic element","level":2,"score":0.6740368604660034},{"id":"https://openalex.org/C185798385","wikidata":"https://www.wikidata.org/wiki/Q1161707","display_name":"Benchmark (surveying)","level":2,"score":0.6031603217124939},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.5962802171707153},{"id":"https://openalex.org/C2776628375","wikidata":"https://www.wikidata.org/wiki/Q4839229","display_name":"Back end of line","level":3,"score":0.5937652587890625},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5170748829841614},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.4984428882598877},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.40017855167388916},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3915475010871887},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.36115944385528564},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3305564522743225},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.31403598189353943},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.13401028513908386},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.10240226984024048},{"id":"https://openalex.org/C13280743","wikidata":"https://www.wikidata.org/wiki/Q131089","display_name":"Geodesy","level":1,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C205649164","wikidata":"https://www.wikidata.org/wiki/Q1071","display_name":"Geography","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/socc.2016.7905483","is_oa":false,"landing_page_url":"https://doi.org/10.1109/socc.2016.7905483","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2016 29th IEEE International System-on-Chip Conference (SOCC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1966797259","https://openalex.org/W2006503955","https://openalex.org/W2016808412","https://openalex.org/W2027790658","https://openalex.org/W2094500082","https://openalex.org/W2292498009","https://openalex.org/W4249950459"],"related_works":["https://openalex.org/W2469980698","https://openalex.org/W4242813950","https://openalex.org/W1991973217","https://openalex.org/W2058545256","https://openalex.org/W4396689093","https://openalex.org/W2084737927","https://openalex.org/W2157788653","https://openalex.org/W2394034449","https://openalex.org/W2904654231","https://openalex.org/W2608154286"],"abstract_inverted_index":{"This":[0],"paper":[1],"discusses":[2],"the":[3,26,56,67,79],"performance":[4,84],"impact":[5,27,65],"of":[6,28,32,52],"interconnect":[7],"parasitic":[8,57,88],"resistance":[9,58,89],"and":[10],"capacitance":[11],"for":[12],"SoC":[13],"(System":[14],"on":[15,39,59,66],"Chip)":[16],"design":[17],"beyond":[18],"10-nm":[19],"FinFET":[20],"technology.":[21],"As":[22],"technology":[23],"scaling":[24],"advances,":[25],"BEOL":[29],"(Back":[30],"End":[31],"Line)":[33],"is":[34,85],"recognized":[35],"as":[36],"one":[37],"influencer":[38],"operating":[40,83],"performance.":[41],"Using":[42],"typical":[43],"logic":[44],"standard":[45],"cells,":[46],"sensitivity":[47],"analysis":[48],"by":[49,87],"DOE":[50],"(Design":[51],"Experiments)":[53],"shows":[54],"that":[55,82],"wire":[60],"loads":[61],"makes":[62],"a":[63],"large":[64],"cell":[68,74],"propagation":[69],"delay":[70],"especially":[71],"with":[72],"strong":[73,91],"drivability.":[75],"Multiple":[76],"benchmarks":[77],"show":[78],"same":[80],"tendency":[81],"degraded":[86],"when":[90],"drivability":[92],"cells":[93],"are":[94],"engaged.":[95]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}