{"id":"https://openalex.org/W2886931799","doi":"https://doi.org/10.1109/smacd.2018.8434857","title":"Analytical Method for Ultra-Low Power UWB Low-Noise Amplifiers","display_name":"Analytical Method for Ultra-Low Power UWB Low-Noise Amplifiers","publication_year":2018,"publication_date":"2018-07-01","ids":{"openalex":"https://openalex.org/W2886931799","doi":"https://doi.org/10.1109/smacd.2018.8434857","mag":"2886931799"},"language":"en","primary_location":{"id":"doi:10.1109/smacd.2018.8434857","is_oa":false,"landing_page_url":"https://doi.org/10.1109/smacd.2018.8434857","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5085848635","display_name":"Ahmed M. Saied","orcid":null},"institutions":[{"id":"https://openalex.org/I84058292","display_name":"Helwan University","ror":"https://ror.org/00h55v928","country_code":"EG","type":"education","lineage":["https://openalex.org/I84058292"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Ahmed M. Saied","raw_affiliation_strings":["Electronics and Communication Engineering Dept., Helwan University, Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics and Communication Engineering Dept., Helwan University, Cairo, Egypt","institution_ids":["https://openalex.org/I84058292"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5021193750","display_name":"M.M. Abutaleb","orcid":"https://orcid.org/0000-0002-6076-4366"},"institutions":[{"id":"https://openalex.org/I84058292","display_name":"Helwan University","ror":"https://ror.org/00h55v928","country_code":"EG","type":"education","lineage":["https://openalex.org/I84058292"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"M. M. Abutaleb","raw_affiliation_strings":["Electronics and Communication Engineering Dept., Helwan University, Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics and Communication Engineering Dept., Helwan University, Cairo, Egypt","institution_ids":["https://openalex.org/I84058292"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Mohamed I. Eladawy","orcid":null},"institutions":[{"id":"https://openalex.org/I84058292","display_name":"Helwan University","ror":"https://ror.org/00h55v928","country_code":"EG","type":"education","lineage":["https://openalex.org/I84058292"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Mohamed I. Eladawy","raw_affiliation_strings":["Electronics and Communication Engineering Dept., Helwan University, Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics and Communication Engineering Dept., Helwan University, Cairo, Egypt","institution_ids":["https://openalex.org/I84058292"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087597892","display_name":"Hani Ragai","orcid":"https://orcid.org/0000-0002-7999-8824"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Hani Ragai","raw_affiliation_strings":["Electronics and Communication Engineering Dept., Ain Sahms University, Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronics and Communication Engineering Dept., Ain Sahms University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"189","last_page":"192"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/figure-of-merit","display_name":"Figure of merit","score":0.7654737234115601},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.705879271030426},{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.6153398156166077},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5946990251541138},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5854120254516602},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5803808569908142},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5630537271499634},{"id":"https://openalex.org/keywords/noise-figure-meter","display_name":"Noise-figure meter","score":0.5277410745620728},{"id":"https://openalex.org/keywords/amplifier-figures-of-merit","display_name":"Amplifier figures of merit","score":0.5087903141975403},{"id":"https://openalex.org/keywords/effective-input-noise-temperature","display_name":"Effective input noise temperature","score":0.460443377494812},{"id":"https://openalex.org/keywords/ultra-low-power","display_name":"Ultra low power","score":0.4584557116031647},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.45602720975875854},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.44719740748405457},{"id":"https://openalex.org/keywords/noise-temperature","display_name":"Noise temperature","score":0.4244336485862732},{"id":"https://openalex.org/keywords/rfic","display_name":"RFIC","score":0.4135238826274872},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.41277238726615906},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.40450677275657654},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3872734010219574},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.34996262192726135},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.24248740077018738},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.224522203207016},{"id":"https://openalex.org/keywords/phase-noise","display_name":"Phase noise","score":0.18989959359169006},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08390820026397705}],"concepts":[{"id":"https://openalex.org/C130277099","wikidata":"https://www.wikidata.org/wiki/Q3676605","display_name":"Figure of merit","level":2,"score":0.7654737234115601},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.705879271030426},{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.6153398156166077},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5946990251541138},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5854120254516602},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5803808569908142},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5630537271499634},{"id":"https://openalex.org/C90166738","wikidata":"https://www.wikidata.org/wiki/Q7047656","display_name":"Noise-figure meter","level":5,"score":0.5277410745620728},{"id":"https://openalex.org/C14577153","wikidata":"https://www.wikidata.org/wiki/Q4748502","display_name":"Amplifier figures of merit","level":5,"score":0.5087903141975403},{"id":"https://openalex.org/C12252657","wikidata":"https://www.wikidata.org/wiki/Q5347266","display_name":"Effective input noise temperature","level":5,"score":0.460443377494812},{"id":"https://openalex.org/C3017773396","wikidata":"https://www.wikidata.org/wiki/Q6692774","display_name":"Ultra low power","level":4,"score":0.4584557116031647},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.45602720975875854},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.44719740748405457},{"id":"https://openalex.org/C52660251","wikidata":"https://www.wikidata.org/wiki/Q17083145","display_name":"Noise temperature","level":3,"score":0.4244336485862732},{"id":"https://openalex.org/C121152627","wikidata":"https://www.wikidata.org/wiki/Q6095735","display_name":"RFIC","level":3,"score":0.4135238826274872},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.41277238726615906},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.40450677275657654},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3872734010219574},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.34996262192726135},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.24248740077018738},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.224522203207016},{"id":"https://openalex.org/C89631360","wikidata":"https://www.wikidata.org/wiki/Q1428766","display_name":"Phase noise","level":2,"score":0.18989959359169006},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08390820026397705},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.0},{"id":"https://openalex.org/C31972630","wikidata":"https://www.wikidata.org/wiki/Q844240","display_name":"Computer vision","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/smacd.2018.8434857","is_oa":false,"landing_page_url":"https://doi.org/10.1109/smacd.2018.8434857","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 15th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8700000047683716,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1967723628","https://openalex.org/W1978112103","https://openalex.org/W1990094385","https://openalex.org/W2004096053","https://openalex.org/W2051110734","https://openalex.org/W2081581042","https://openalex.org/W2291802539","https://openalex.org/W2294591273","https://openalex.org/W2463172901","https://openalex.org/W2573843533"],"related_works":["https://openalex.org/W1826511788","https://openalex.org/W1991411997","https://openalex.org/W2309688638","https://openalex.org/W1993664839","https://openalex.org/W750990547","https://openalex.org/W2746785530","https://openalex.org/W2114394480","https://openalex.org/W2280955118","https://openalex.org/W2532959648","https://openalex.org/W2149978163"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,65],"MOSFET":[4],"model":[5,48],"for":[6],"ultra-low":[7],"power":[8,80],"radio-frequency":[9],"integrated":[10],"circuits":[11],"(RFICs)":[12],"design.":[13],"In":[14],"addition,":[15],"we":[16],"discussed":[17],"the":[18,21,26,33],"concept":[19],"of":[20,70,84],"Operating":[22],"Parameter":[23],"(OP)":[24],"as":[25],"main":[27],"design":[28,54,94],"parameter":[29],"used":[30],"to":[31,51,89,92],"determine":[32],"operating":[34],"point,":[35],"from":[36],"weak,":[37],"via":[38],"moderate,":[39],"or":[40],"strong":[41],"inversion.":[42],"The":[43,82],"proposed":[44],"OP":[45],"based":[46],"analytical":[47],"is":[49,87],"applied":[50],"an":[52],"LNA":[53],"(3-5":[55],"GHz)":[56],"in":[57],"130":[58],"nm":[59],"CMOS":[60],"technology.":[61],"Simulation":[62],"results":[63],"showed":[64],"minimum":[66],"noise":[67],"figure":[68,83],"(NF)":[69],"2.3":[71],"dB,":[72],"max":[73],"gain":[74],"9.6":[75],"dB":[76],"and":[77],"0.25":[78],"mW":[79],"dissipation.":[81],"merit":[85],"(FoM)":[86],"found":[88],"be":[90],"superior":[91],"previous":[93],"techniques.":[95]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}