{"id":"https://openalex.org/W2735428188","doi":"https://doi.org/10.1109/smacd.2017.7981578","title":"A cryogenic modeling methodology of MOSFET I-V characteristics in BSIM3","display_name":"A cryogenic modeling methodology of MOSFET I-V characteristics in BSIM3","publication_year":2017,"publication_date":"2017-06-01","ids":{"openalex":"https://openalex.org/W2735428188","doi":"https://doi.org/10.1109/smacd.2017.7981578","mag":"2735428188"},"language":"en","primary_location":{"id":"doi:10.1109/smacd.2017.7981578","is_oa":false,"landing_page_url":"https://doi.org/10.1109/smacd.2017.7981578","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5061917362","display_name":"Aykut Kabao\u011flu","orcid":"https://orcid.org/0000-0002-4531-2484"},"institutions":[{"id":"https://openalex.org/I48912391","display_name":"Istanbul Technical University","ror":"https://ror.org/059636586","country_code":"TR","type":"education","lineage":["https://openalex.org/I48912391"]}],"countries":["TR"],"is_corresponding":true,"raw_author_name":"Aykut Kabaoglu","raw_affiliation_strings":["Electronics and Communication Engineering, Istanbul Technical University"],"affiliations":[{"raw_affiliation_string":"Electronics and Communication Engineering, Istanbul Technical University","institution_ids":["https://openalex.org/I48912391"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5035639218","display_name":"Mustafa Berke Yelten","orcid":"https://orcid.org/0000-0001-7482-0536"},"institutions":[{"id":"https://openalex.org/I48912391","display_name":"Istanbul Technical University","ror":"https://ror.org/059636586","country_code":"TR","type":"education","lineage":["https://openalex.org/I48912391"]}],"countries":["TR"],"is_corresponding":false,"raw_author_name":"Mustafa Berke Yelten","raw_affiliation_strings":["Electronics and Communication Engineering, Istanbul Technical University"],"affiliations":[{"raw_affiliation_string":"Electronics and Communication Engineering, Istanbul Technical University","institution_ids":["https://openalex.org/I48912391"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5061917362"],"corresponding_institution_ids":["https://openalex.org/I48912391"],"apc_list":null,"apc_paid":null,"fwci":1.1626,"has_fulltext":false,"cited_by_count":17,"citation_normalized_percentile":{"value":0.80153622,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.7944244146347046},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.7760682106018066},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6851324439048767},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6640941500663757},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.46944543719291687},{"id":"https://openalex.org/keywords/transistor-model","display_name":"Transistor model","score":0.4613066017627716},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4232117235660553},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41680243611335754},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3670172095298767},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.347519189119339},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31654462218284607},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2653012275695801}],"concepts":[{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.7944244146347046},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.7760682106018066},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6851324439048767},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6640941500663757},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.46944543719291687},{"id":"https://openalex.org/C150169584","wikidata":"https://www.wikidata.org/wiki/Q7834319","display_name":"Transistor model","level":4,"score":0.4613066017627716},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4232117235660553},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41680243611335754},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3670172095298767},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.347519189119339},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31654462218284607},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2653012275695801}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/smacd.2017.7981578","is_oa":false,"landing_page_url":"https://doi.org/10.1109/smacd.2017.7981578","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)","raw_type":"proceedings-article"},{"id":"pmh:oai:polen.itu.edu.tr:11527/40274","is_oa":false,"landing_page_url":"https://hdl.handle.net/11527/40274","pdf_url":null,"source":{"id":"https://openalex.org/S4306400460","display_name":"Istanbul Technical University Academic Open Archive (Istanbul Technical University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I48912391","host_organization_name":"Istanbul Technical University","host_organization_lineage":["https://openalex.org/I48912391"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"Article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7699999809265137,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W100799738","https://openalex.org/W1501443680","https://openalex.org/W1525758079","https://openalex.org/W1999784799","https://openalex.org/W2067987747","https://openalex.org/W2096652287","https://openalex.org/W2140353965"],"related_works":["https://openalex.org/W4386261925","https://openalex.org/W2048420745","https://openalex.org/W2082944690","https://openalex.org/W2263373136","https://openalex.org/W1914349328","https://openalex.org/W1811213809","https://openalex.org/W2160067645","https://openalex.org/W1742453416","https://openalex.org/W2379197520","https://openalex.org/W2118017818"],"abstract_inverted_index":{"Transistor":[0],"models":[1,42],"for":[2,27,58,134],"circuit":[3,98],"analysis":[4],"have":[5],"temperature":[6,15,29,71],"dependent":[7],"parameters":[8,57,68,113],"which":[9],"are":[10],"only":[11],"valid":[12],"in":[13,23,36,124],"standard":[14],"range":[16],"of":[17,73,115,127],"\u221255":[18],"\u00b0C":[19,22],"to":[20,54],"125":[21],"general.":[24],"Circuits":[25],"designed":[26],"low":[28,62,91],"military":[30],"and":[31,79,100,131,143],"space":[32],"applications":[33],"should":[34],"work":[35],"cryogenic":[37],"conditions":[38],"properly.":[39],"Thus,":[40],"transistor":[41,117],"must":[43],"be":[44],"modified.":[45],"In":[46],"this":[47,120],"paper,":[48],"a":[49,97],"methodology":[50,65],"has":[51,104,138],"been":[52,105,139],"developed":[53],"optimize":[55],"these":[56],"MOSFET":[59],"devices":[60],"at":[61,90],"temperatures.":[63],"The":[64],"updates":[66],"all":[67],"regulating":[69],"the":[70,74,84,116],"dependency":[72],"drain":[75],"current,":[76],"threshold":[77],"voltage":[78],"saturation":[80],"velocity":[81],"based":[82],"on":[83],"chosen":[85],"target":[86],"data":[87],"set":[88],"taken":[89],"temperature.":[92],"An":[93],"automated":[94],"system":[95],"involving":[96],"simulator":[99],"mathematical":[101],"programming":[102],"tool":[103],"established":[106],"that":[107],"can":[108],"analytically":[109],"compute":[110],"revised":[111],"model":[112],"independent":[114],"process.":[118],"Using":[119],"methodology,":[121],"average":[122],"errors":[123],"I-V":[125],"curves":[126],"various":[128],"sizes":[129],"NMOS":[130],"PMOS":[132],"transistors":[133],"0.18":[135],"\u03bcm":[136],"technology":[137],"reduced":[140],"below":[141],"2.5%":[142],"3.5%,":[144],"respectively.":[145]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":3},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1}],"updated_date":"2026-03-06T13:50:29.536080","created_date":"2025-10-10T00:00:00"}