{"id":"https://openalex.org/W7127975597","doi":"https://doi.org/10.1109/siot68426.2025.11368777","title":"TID-Hardened IoT Design Using Diamond and Octo MOSFET Layouts Styles","display_name":"TID-Hardened IoT Design Using Diamond and Octo MOSFET Layouts Styles","publication_year":2025,"publication_date":"2025-10-14","ids":{"openalex":"https://openalex.org/W7127975597","doi":"https://doi.org/10.1109/siot68426.2025.11368777"},"language":null,"primary_location":{"id":"doi:10.1109/siot68426.2025.11368777","is_oa":false,"landing_page_url":"https://doi.org/10.1109/siot68426.2025.11368777","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 Symposium on Internet of Things (SIoT)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5125193441","display_name":"Anderson Leoc\u00e1dio Alves","orcid":null},"institutions":[{"id":"https://openalex.org/I139221136","display_name":"Centro Universit\u00e1rio FEI","ror":"https://ror.org/007kf5222","country_code":"BR","type":"education","lineage":["https://openalex.org/I139221136"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Anderson Leoc\u00e1dio Alves","raw_affiliation_strings":["FEI University Center São Bernardo do Campo,Department of Electrical Engineering,Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"FEI University Center São Bernardo do Campo,Department of Electrical Engineering,Brazil","institution_ids":["https://openalex.org/I139221136"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026938022","display_name":"Rafael G. Vaz","orcid":"https://orcid.org/0000-0002-1456-6748"},"institutions":[{"id":"https://openalex.org/I4210108942","display_name":"Department of Aerospace Science and Technology","ror":"https://ror.org/01x81nn04","country_code":"BR","type":"government","lineage":["https://openalex.org/I4210108942"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Rafael Galhardo Vaz","raw_affiliation_strings":["Applied Physics Division IEAv São José dos,Campos,Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Physics Division IEAv São José dos,Campos,Brazil","institution_ids":["https://openalex.org/I4210108942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5023485160","display_name":"Vinicius Vono Peruzzi","orcid":"https://orcid.org/0000-0001-9068-3244"},"institutions":[{"id":"https://openalex.org/I4210142333","display_name":"Centro de Tecnologia da Informa\u00e7\u00e3o Renato Archer","ror":"https://ror.org/044nfga98","country_code":"BR","type":"government","lineage":["https://openalex.org/I4210142333","https://openalex.org/I4210151455"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Vinicius Vono Peruzzi","raw_affiliation_strings":["DIPAQ CTI Renato Archer,Campinas,Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DIPAQ CTI Renato Archer,Campinas,Brazil","institution_ids":["https://openalex.org/I4210142333"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010586917","display_name":"Odair L\u00e9lis Gon\u00e7alez","orcid":"https://orcid.org/0000-0003-3446-5159"},"institutions":[{"id":"https://openalex.org/I4210108942","display_name":"Department of Aerospace Science and Technology","ror":"https://ror.org/01x81nn04","country_code":"BR","type":"government","lineage":["https://openalex.org/I4210108942"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Odair Lelis Gon\u00e7alez","raw_affiliation_strings":["Applied Physics Division IEAv São José dos,Campos,Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Applied Physics Division IEAv São José dos,Campos,Brazil","institution_ids":["https://openalex.org/I4210108942"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042635701","display_name":"Saulo Finco","orcid":"https://orcid.org/0000-0003-4115-4500"},"institutions":[{"id":"https://openalex.org/I4210142333","display_name":"Centro de Tecnologia da Informa\u00e7\u00e3o Renato Archer","ror":"https://ror.org/044nfga98","country_code":"BR","type":"government","lineage":["https://openalex.org/I4210142333","https://openalex.org/I4210151455"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Saulo Finco","raw_affiliation_strings":["DIPAQ CTI Renato Archer,Campinas,Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DIPAQ CTI Renato Archer,Campinas,Brazil","institution_ids":["https://openalex.org/I4210142333"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016699988","display_name":"Salvador Pinillos Gimenez","orcid":"https://orcid.org/0000-0002-3616-9559"},"institutions":[{"id":"https://openalex.org/I139221136","display_name":"Centro Universit\u00e1rio FEI","ror":"https://ror.org/007kf5222","country_code":"BR","type":"education","lineage":["https://openalex.org/I139221136"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Salvador Pinillos Gimenez","raw_affiliation_strings":["FEI University Center São Bernardo do Campo,Department of Electrical Engineering,Brazil"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"FEI University Center São Bernardo do Campo,Department of Electrical Engineering,Brazil","institution_ids":["https://openalex.org/I139221136"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.6913313,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.942300021648407,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11005","display_name":"Radiation Effects in Electronics","score":0.942300021648407,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.016599999740719795,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10478","display_name":"Diamond and Carbon-based Materials Research","score":0.004999999888241291,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.7900999784469604},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6446999907493591},{"id":"https://openalex.org/keywords/saturation-current","display_name":"Saturation current","score":0.37540000677108765},{"id":"https://openalex.org/keywords/diamond","display_name":"Diamond","score":0.37229999899864197},{"id":"https://openalex.org/keywords/internet-of-things","display_name":"Internet of Things","score":0.3709999918937683},{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.3646000027656555}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.7900999784469604},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6446999907493591},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.47679999470710754},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4593000113964081},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4564000070095062},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.44769999384880066},{"id":"https://openalex.org/C155891486","wikidata":"https://www.wikidata.org/wiki/Q3694418","display_name":"Saturation current","level":3,"score":0.37540000677108765},{"id":"https://openalex.org/C2776921476","wikidata":"https://www.wikidata.org/wiki/Q5283","display_name":"Diamond","level":2,"score":0.37229999899864197},{"id":"https://openalex.org/C81860439","wikidata":"https://www.wikidata.org/wiki/Q251212","display_name":"Internet of Things","level":2,"score":0.3709999918937683},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.3646000027656555},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3467999994754791},{"id":"https://openalex.org/C153385146","wikidata":"https://www.wikidata.org/wiki/Q18335","display_name":"Radiation","level":2,"score":0.3400999903678894},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.30799999833106995},{"id":"https://openalex.org/C18231593","wikidata":"https://www.wikidata.org/wiki/Q186161","display_name":"Ionizing radiation","level":3,"score":0.30660000443458557},{"id":"https://openalex.org/C198082294","wikidata":"https://www.wikidata.org/wiki/Q3399648","display_name":"Position (finance)","level":2,"score":0.30649998784065247},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.3003999888896942}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/siot68426.2025.11368777","is_oa":false,"landing_page_url":"https://doi.org/10.1109/siot68426.2025.11368777","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2025 Symposium on Internet of Things (SIoT)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8704166412353516,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W51088488","https://openalex.org/W1628059699","https://openalex.org/W2322817767","https://openalex.org/W2480442855","https://openalex.org/W2773326077","https://openalex.org/W2786945251","https://openalex.org/W2883224131","https://openalex.org/W2910465736","https://openalex.org/W3044509877","https://openalex.org/W3097216033","https://openalex.org/W3117804891","https://openalex.org/W3166863298","https://openalex.org/W3194791296","https://openalex.org/W3217611857","https://openalex.org/W4231727163","https://openalex.org/W4300670294","https://openalex.org/W4375809904","https://openalex.org/W4386617384"],"related_works":[],"abstract_inverted_index":{"This":[0],"study":[1],"shows":[2],"the":[3,32,90],"experimental":[4],"electrical":[5],"performance":[6],"and":[7,13,37,48,83,93,100],"radiation":[8,85],"hardiness":[9],"of":[10,70,111],"Diamond":[11],"(DnM)":[12],"Octo":[14],"(OnM)":[15],"layout":[16,64],"styles":[17,65],"for":[18,66,107],"MOSFETs":[19,67],"compared":[20,55],"to":[21,56,89],"conventional":[22],"counterparts":[23],"(CnM).":[24],"Our":[25],"main":[26],"findings":[27],"reveal":[28],"significant":[29],"enhancements":[30],"in":[31,59,115],"saturation":[33],"drain":[34],"current":[35],"(Idssat)":[36],"maximum":[38],"transconductance":[39],"(gmmax),":[40],"with":[41],"OnMs":[42,101],"showing":[43],"over":[44,51],"700%":[45],"higher":[46,53],"Idssat":[47],"DnMs":[49,99],"achieving":[50],"300%":[52],"gmmax,":[54],"those":[57],"found":[58],"CnMs.":[60],"Significantly,":[61],"these":[62],"non-conventional":[63],"are":[68],"capable":[69],"exhibiting":[71],"lower":[72],"variability":[73],"(Variation":[74],"Coefficient":[75],"as":[76,78,102],"low":[77],"$\\mathbf{0.":[79],"0":[80],"2":[81],"0}$)":[82],"superior":[84],"hardness":[86],"post-irradiation,":[87],"thanks":[88],"LCE,":[91],"PAMDLE,":[92],"DEPAMBBRE":[94],"effects.":[95],"These":[96],"results":[97],"position":[98],"highly":[103],"promising,":[104],"robust":[105],"solutions":[106],"energy-efficient,":[108],"high-performance":[109],"Internet":[110],"Things":[112],"(IoT)":[113],"applications":[114],"harsh,":[116],"ionizing":[117],"radiation-exposed":[118],"environments.":[119]},"counts_by_year":[],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2026-02-07T00:00:00"}