{"id":"https://openalex.org/W4405491070","doi":"https://doi.org/10.1109/sensors60989.2024.10785098","title":"High Performance Hydrogen Sensors Based on Tellurium Nanobelt Field-Effect Transistors","display_name":"High Performance Hydrogen Sensors Based on Tellurium Nanobelt Field-Effect Transistors","publication_year":2024,"publication_date":"2024-10-20","ids":{"openalex":"https://openalex.org/W4405491070","doi":"https://doi.org/10.1109/sensors60989.2024.10785098"},"language":"en","primary_location":{"id":"doi:10.1109/sensors60989.2024.10785098","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sensors60989.2024.10785098","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE SENSORS","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5088347524","display_name":"Yu Guo","orcid":"https://orcid.org/0000-0002-2401-4189"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4391767659","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95","country_code":null,"type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yu Guo","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China","institution_ids":["https://openalex.org/I4391767659","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100390069","display_name":"Jianping Zhang","orcid":"https://orcid.org/0000-0002-0956-9987"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4391767659","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95","country_code":null,"type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jianping Zhang","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China","institution_ids":["https://openalex.org/I4391767659","https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113712912","display_name":"Zhen Yuan","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4391767659","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95","country_code":null,"type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhen Yuan","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China","institution_ids":["https://openalex.org/I4391767659","https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5041654632","display_name":"Huiling Tai","orcid":"https://orcid.org/0000-0001-5966-3843"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]},{"id":"https://openalex.org/I4391767659","display_name":"State Key Laboratory of Electronic Thin Films and Integrated Devices","ror":"https://ror.org/01t9yse95","country_code":null,"type":"facility","lineage":["https://openalex.org/I150229711","https://openalex.org/I4391767659"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huiling Tai","raw_affiliation_strings":["School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China (UESTC),State Key Laboratory of Electronic Thin Films and Integrated Devices,Chengdu,China","institution_ids":["https://openalex.org/I4391767659","https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":null,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":null,"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10461","display_name":"Gas Sensing Nanomaterials and Sensors","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10461","display_name":"Gas Sensing Nanomaterials and Sensors","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11111","display_name":"Spectroscopy and Laser Applications","score":0.9805999994277954,"subfield":{"id":"https://openalex.org/subfields/1607","display_name":"Spectroscopy"},"field":{"id":"https://openalex.org/fields/16","display_name":"Chemistry"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/tellurium","display_name":"Tellurium","score":0.8700380325317383},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5277555584907532},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.5186066627502441},{"id":"https://openalex.org/keywords/hydrogen","display_name":"Hydrogen","score":0.5130842924118042},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.496589720249176},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.46918320655822754},{"id":"https://openalex.org/keywords/field","display_name":"Field (mathematics)","score":0.4177367389202118},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3417440354824066},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3205040693283081},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.240216463804245},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18886932730674744},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.18305817246437073},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.06993374228477478},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.057141512632369995}],"concepts":[{"id":"https://openalex.org/C538181303","wikidata":"https://www.wikidata.org/wiki/Q1100","display_name":"Tellurium","level":2,"score":0.8700380325317383},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5277555584907532},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.5186066627502441},{"id":"https://openalex.org/C512968161","wikidata":"https://www.wikidata.org/wiki/Q556","display_name":"Hydrogen","level":2,"score":0.5130842924118042},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.496589720249176},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.46918320655822754},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.4177367389202118},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3417440354824066},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3205040693283081},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.240216463804245},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18886932730674744},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.18305817246437073},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06993374228477478},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.057141512632369995},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/sensors60989.2024.10785098","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sensors60989.2024.10785098","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE SENSORS","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8199999928474426,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G7050552008","display_name":null,"funder_award_id":"62101105","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W1984908220","https://openalex.org/W2014683011","https://openalex.org/W2015079280","https://openalex.org/W2029408076","https://openalex.org/W2053734500","https://openalex.org/W2319994280","https://openalex.org/W2798117509","https://openalex.org/W2996380141","https://openalex.org/W3090249274","https://openalex.org/W3108239768","https://openalex.org/W3214162500","https://openalex.org/W4200155232","https://openalex.org/W4210289155","https://openalex.org/W4396780700","https://openalex.org/W4398765486"],"related_works":["https://openalex.org/W2360171685","https://openalex.org/W2162239902","https://openalex.org/W1993711794","https://openalex.org/W2075619127","https://openalex.org/W1233994774","https://openalex.org/W2072424359","https://openalex.org/W2061674058","https://openalex.org/W2750055590","https://openalex.org/W1990516236","https://openalex.org/W1976012112"],"abstract_inverted_index":{"Tellurium":[0],"(Te),":[1],"a":[2,20,35,54,66],"p-type":[3],"semiconductor":[4],"with":[5,34],"high":[6],"carrier":[7],"mobility,":[8],"is":[9,95],"particularly":[10],"advantageous":[11],"for":[12,41],"field-effect":[13],"transistor":[14],"(FET)":[15],"applications.":[16],"In":[17],"this":[18],"study,":[19],"high-performance":[21],"FET-type":[22],"hydrogen":[23],"sensor":[24,31,88],"utilizing":[25],"Te":[26,84],"nanobelts":[27],"was":[28,32],"developed.":[29],"The":[30,51],"fabricated":[33],"palladium":[36],"(Pd)":[37],"gate,":[38],"specifically":[39],"chosen":[40],"its":[42],"sensitivity":[43],"to":[44,61,97],"hydrogen,":[45],"enhancing":[46],"both":[47],"selectivity":[48],"and":[49,74],"response.":[50],"results":[52],"indicate":[53],"short":[55],"response":[56],"time":[57],"of":[58,83,105],"~2":[59],"s":[60],"4%":[62],"H<inf":[63],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[64],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</inf>,":[65],"detection":[67],"limit":[68],"as":[69,71],"low":[70],"50":[72],"ppm,":[73],"negligible":[75],"cross-sensitivity":[76],"at":[77],"room":[78],"temperature,":[79],"highlighting":[80],"the":[81,91,102],"potential":[82,104],"in":[85],"advancing":[86],"gas":[87,107],"technology.":[89],"Furthermore,":[90],"flexible":[92],"FET":[93],"design":[94],"expected":[96],"detect":[98],"various":[99],"gases,":[100],"broadening":[101],"application":[103],"Te-based":[106],"sensors.":[108]},"counts_by_year":[],"updated_date":"2026-07-14T23:27:15.235271","created_date":"2025-10-10T00:00:00"}