{"id":"https://openalex.org/W4389101902","doi":"https://doi.org/10.1109/sensors56945.2023.10325269","title":"Development of Power Divider in 28 GHz Band Using Si Semiconductor Process","display_name":"Development of Power Divider in 28 GHz Band Using Si Semiconductor Process","publication_year":2023,"publication_date":"2023-10-29","ids":{"openalex":"https://openalex.org/W4389101902","doi":"https://doi.org/10.1109/sensors56945.2023.10325269"},"language":"en","primary_location":{"id":"doi:10.1109/sensors56945.2023.10325269","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sensors56945.2023.10325269","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE SENSORS","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037606725","display_name":"Gapseop Sim","orcid":null},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]},{"id":"https://openalex.org/I4210164985","display_name":"National NanoFab Center","ror":"https://ror.org/05k1va520","country_code":"KR","type":"facility","lineage":["https://openalex.org/I157485424","https://openalex.org/I4210164985"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Gapseop Sim","raw_affiliation_strings":["National Nanofab Center,Daejeon,Korea,34141","Department of Electrical Engineering, Chungnam National University, Daejeon, Korea"],"affiliations":[{"raw_affiliation_string":"National Nanofab Center,Daejeon,Korea,34141","institution_ids":["https://openalex.org/I4210164985"]},{"raw_affiliation_string":"Department of Electrical Engineering, Chungnam National University, Daejeon, Korea","institution_ids":["https://openalex.org/I196345858"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019459410","display_name":"Woojin Yun","orcid":"https://orcid.org/0000-0002-4526-7118"},"institutions":[{"id":"https://openalex.org/I4210164985","display_name":"National NanoFab Center","ror":"https://ror.org/05k1va520","country_code":"KR","type":"facility","lineage":["https://openalex.org/I157485424","https://openalex.org/I4210164985"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Woojin Yun","raw_affiliation_strings":["National Nanofab Center,Daejeon,Korea,34141"],"affiliations":[{"raw_affiliation_string":"National Nanofab Center,Daejeon,Korea,34141","institution_ids":["https://openalex.org/I4210164985"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054962626","display_name":"Chungmo Yang","orcid":"https://orcid.org/0000-0002-4690-1061"},"institutions":[{"id":"https://openalex.org/I4210164985","display_name":"National NanoFab Center","ror":"https://ror.org/05k1va520","country_code":"KR","type":"facility","lineage":["https://openalex.org/I157485424","https://openalex.org/I4210164985"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chung-Mo Yang","raw_affiliation_strings":["National Nanofab Center,Daejeon,Korea,34141"],"affiliations":[{"raw_affiliation_string":"National Nanofab Center,Daejeon,Korea,34141","institution_ids":["https://openalex.org/I4210164985"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007798566","display_name":"Choul\u2010Young Kim","orcid":"https://orcid.org/0000-0002-5532-7399"},"institutions":[{"id":"https://openalex.org/I196345858","display_name":"Chungnam National University","ror":"https://ror.org/0227as991","country_code":"KR","type":"education","lineage":["https://openalex.org/I196345858"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Choul-Young Kim","raw_affiliation_strings":["Chungnam National University,Department of Electrical Engineering,Daejeon,Korea,34141"],"affiliations":[{"raw_affiliation_string":"Chungnam National University,Department of Electrical Engineering,Daejeon,Korea,34141","institution_ids":["https://openalex.org/I196345858"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5037606725"],"corresponding_institution_ids":["https://openalex.org/I196345858","https://openalex.org/I4210164985"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.14762482,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9800000190734863,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-dividers-and-directional-couplers","display_name":"Power dividers and directional couplers","score":0.7261272072792053},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6916696429252625},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.6461696028709412},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.5908506512641907},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.5897373557090759},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5799938440322876},{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.548667848110199},{"id":"https://openalex.org/keywords/wilkinson-power-divider","display_name":"Wilkinson power divider","score":0.5334447026252747},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5234717130661011},{"id":"https://openalex.org/keywords/insertion-loss","display_name":"Insertion loss","score":0.5070657730102539},{"id":"https://openalex.org/keywords/frequency-divider","display_name":"Frequency divider","score":0.4903402328491211},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.45064598321914673},{"id":"https://openalex.org/keywords/current-divider","display_name":"Current divider","score":0.41030073165893555},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2049177587032318},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.11671575903892517}],"concepts":[{"id":"https://openalex.org/C202988678","wikidata":"https://www.wikidata.org/wiki/Q1417986","display_name":"Power dividers and directional couplers","level":2,"score":0.7261272072792053},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6916696429252625},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.6461696028709412},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.5908506512641907},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5897373557090759},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5799938440322876},{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.548667848110199},{"id":"https://openalex.org/C184028887","wikidata":"https://www.wikidata.org/wiki/Q265565","display_name":"Wilkinson power divider","level":4,"score":0.5334447026252747},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5234717130661011},{"id":"https://openalex.org/C90327742","wikidata":"https://www.wikidata.org/wiki/Q947396","display_name":"Insertion loss","level":2,"score":0.5070657730102539},{"id":"https://openalex.org/C74982907","wikidata":"https://www.wikidata.org/wiki/Q1455624","display_name":"Frequency divider","level":3,"score":0.4903402328491211},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.45064598321914673},{"id":"https://openalex.org/C97264828","wikidata":"https://www.wikidata.org/wiki/Q4157078","display_name":"Current divider","level":4,"score":0.41030073165893555},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2049177587032318},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.11671575903892517}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/sensors56945.2023.10325269","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sensors56945.2023.10325269","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2023 IEEE SENSORS","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7900000214576721,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2132618262","https://openalex.org/W2146637503","https://openalex.org/W2154602056","https://openalex.org/W2892046431"],"related_works":["https://openalex.org/W1976435525","https://openalex.org/W1968508814","https://openalex.org/W4205937560","https://openalex.org/W2898426978","https://openalex.org/W2892277158","https://openalex.org/W4242802974","https://openalex.org/W1545782777","https://openalex.org/W2366057978","https://openalex.org/W1867685185","https://openalex.org/W2007735876"],"abstract_inverted_index":{"A":[0],"passive":[1],"device":[2],"library":[3],"was":[4,27,34,46,55],"built":[5],"using":[6,29,36],"the":[7,12,23,49,58],"Si":[8,41],"semiconductor":[9],"process":[10],"of":[11,69,77,84,90],"National":[13],"Nanofab":[14],"Center,":[15],"and":[16,43,52,72,87],"a":[17,40],"power":[18,32,66],"divider":[19,33,67],"that":[20],"operates":[21],"in":[22],"28":[24],"GHz":[25],"band":[26],"developed":[28],"it.":[30],"The":[31,65],"implemented":[35],"2-layer":[37],"metal":[38,51,60],"on":[39],"wafer,":[42],"AI":[44],"1-um":[45],"deposited":[47,56],"as":[48,57],"1st":[50],"Cu-2.5":[53],"um":[54],"2nd":[59],"for":[61],"good":[62],"RF":[63],"performance.":[64],"composed":[68],"resistor,":[70],"inductor,":[71],"capacitor":[73],"showed":[74],"input/output":[75],"matching":[76],"\u221210.3":[78],"dB,":[79,81],"\u221215":[80],"isolation":[82],"characteristics":[83],"\u221217.7":[85],"dB":[86,92],"insertion":[88],"loss":[89],"1.9":[91],"at":[93],"28GHz.":[94]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}