{"id":"https://openalex.org/W4403279689","doi":"https://doi.org/10.1109/sbcci62366.2024.10703983","title":"All-GaN Integrated Overcurrent Protection Circuit Using Only Enhancement-mode p-GaN Devices","display_name":"All-GaN Integrated Overcurrent Protection Circuit Using Only Enhancement-mode p-GaN Devices","publication_year":2024,"publication_date":"2024-09-02","ids":{"openalex":"https://openalex.org/W4403279689","doi":"https://doi.org/10.1109/sbcci62366.2024.10703983"},"language":"en","primary_location":{"id":"doi:10.1109/sbcci62366.2024.10703983","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sbcci62366.2024.10703983","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5051183707","display_name":"Nataly Pozo","orcid":"https://orcid.org/0000-0002-7722-0840"},"institutions":[{"id":"https://openalex.org/I69094615","display_name":"Universidad San Francisco de Quito","ror":"https://ror.org/01r2c3v86","country_code":"EC","type":"education","lineage":["https://openalex.org/I69094615"]}],"countries":["EC"],"is_corresponding":false,"raw_author_name":"Nataly Pozo","raw_affiliation_strings":["Universidad San Francisco de Quito,Instituto de Micro y Nanoelectrónica-IMNE,Quito,Ecuador"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universidad San Francisco de Quito,Instituto de Micro y Nanoelectrónica-IMNE,Quito,Ecuador","institution_ids":["https://openalex.org/I69094615"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019358707","display_name":"Luis Miguel Pr\u00f3cel","orcid":"https://orcid.org/0000-0001-6189-5184"},"institutions":[{"id":"https://openalex.org/I69094615","display_name":"Universidad San Francisco de Quito","ror":"https://ror.org/01r2c3v86","country_code":"EC","type":"education","lineage":["https://openalex.org/I69094615"]}],"countries":["EC"],"is_corresponding":false,"raw_author_name":"Luis-Miguel Pr\u00f3cel","raw_affiliation_strings":["Universidad San Francisco de Quito,Instituto de Micro y Nanoelectrónica-IMNE,Quito,Ecuador"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Universidad San Francisco de Quito,Instituto de Micro y Nanoelectrónica-IMNE,Quito,Ecuador","institution_ids":["https://openalex.org/I69094615"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080224527","display_name":"Lionel Trojman","orcid":"https://orcid.org/0000-0003-2316-4959"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Lionel Trojman","raw_affiliation_strings":["Isep,Laboratoire d’Informatique, Signal et Image, Électronique et Télécommunication-LISITE,Paris,France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Isep,Laboratoire d’Informatique, Signal et Image, Électronique et Télécommunication-LISITE,Paris,France","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":3.2683,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.90919607,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9930999875068665,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/overcurrent","display_name":"Overcurrent","score":0.8688098192214966},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6524829864501953},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6354308128356934},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5840680003166199},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.4964039921760559},{"id":"https://openalex.org/keywords/mode","display_name":"Mode (computer interface)","score":0.4801763594150543},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3357069790363312},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.25311803817749023},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.14392247796058655},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12235701084136963},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.10539382696151733}],"concepts":[{"id":"https://openalex.org/C47949032","wikidata":"https://www.wikidata.org/wiki/Q663542","display_name":"Overcurrent","level":3,"score":0.8688098192214966},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6524829864501953},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6354308128356934},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5840680003166199},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.4964039921760559},{"id":"https://openalex.org/C48677424","wikidata":"https://www.wikidata.org/wiki/Q6888088","display_name":"Mode (computer interface)","level":2,"score":0.4801763594150543},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3357069790363312},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.25311803817749023},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.14392247796058655},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12235701084136963},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.10539382696151733},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/sbcci62366.2024.10703983","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sbcci62366.2024.10703983","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI)","raw_type":"proceedings-article"},{"id":"pmh:oai:HAL:hal-05187203v1","is_oa":false,"landing_page_url":"https://hal.science/hal-05187203","pdf_url":null,"source":{"id":"https://openalex.org/S4306402512","display_name":"HAL (Le Centre pour la Communication Scientifique Directe)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I1294671590","host_organization_name":"Centre National de la Recherche Scientifique","host_organization_lineage":["https://openalex.org/I1294671590"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"2024 37th SBC/SBMicro/IEEE Symposium on Integrated Circuits and Systems Design (SBCCI), Sep 2024, Joao Pessoa, Brazil. pp.1-5, ⟨10.1109/SBCCI62366.2024.10703983⟩","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7300000190734863,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G1061281233","display_name":"Ing\u00e9nierie de Formations Innovantes et Strat\u00e9giques en Micro\u00e9lectronique","funder_award_id":"ANR-23-CMAS-0024","funder_id":"https://openalex.org/F4320320883","funder_display_name":"Agence Nationale de la Recherche"}],"funders":[{"id":"https://openalex.org/F4320320883","display_name":"Agence Nationale de la Recherche","ror":"https://ror.org/00rbzpz17"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W2770043669","https://openalex.org/W2811134109","https://openalex.org/W2894970839","https://openalex.org/W2949353733","https://openalex.org/W2960754720","https://openalex.org/W2979594494","https://openalex.org/W2980733434","https://openalex.org/W3066836902","https://openalex.org/W3092259243","https://openalex.org/W3110144561","https://openalex.org/W3138109347","https://openalex.org/W4206616873","https://openalex.org/W4226108014","https://openalex.org/W4310584398","https://openalex.org/W4312580613","https://openalex.org/W4364322810","https://openalex.org/W4382541907","https://openalex.org/W4402571990","https://openalex.org/W6981010775","https://openalex.org/W7028827255","https://openalex.org/W7029861279"],"related_works":["https://openalex.org/W2000487630","https://openalex.org/W2654716541","https://openalex.org/W1988167421","https://openalex.org/W2109359929","https://openalex.org/W2037936622","https://openalex.org/W2533157014","https://openalex.org/W4297582192","https://openalex.org/W4289782876","https://openalex.org/W4385624134","https://openalex.org/W2003184216"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3,58,84,121,146],"design":[4,55],"of":[5,38,53,60,120,133],"a":[6,39,42,44,95,130,139],"new":[7],"topology":[8],"for":[9,129],"an":[10,47],"Overcurrent":[11],"Protection":[12],"(OCP)":[13],"Integrated":[14,91],"Circuit":[15,92],"(IC),":[16],"developed":[17],"entirely":[18],"in":[19,57],"p-Gallium":[20],"Nitride":[21],"(p-GaN)":[22],"technology":[23],"using":[24],"only":[25],"Enhancement-mode":[26],"(E-mode)":[27],"High":[28],"Electron":[29],"Transistor":[30,68],"Mobility":[31],"(HEMT)":[32],"devices.":[33,62],"The":[34,51,76,88,102,117,136],"OCP":[35,78,85,103],"circuit":[36,79],"consists":[37],"current-mirror":[40],"sensor,":[41],"comparator,":[43],"latch,":[45],"and":[46,71,109,114],"auxiliary":[48],"logic":[49],"circuit.":[50],"complexity":[52],"this":[54,65],"lies":[56],"absence":[59],"P-type":[61],"To":[63],"overcome":[64],"limitation,":[66],"Resistor":[67],"Logic":[69],"(RTL)":[70],"Push-Pull":[72],"buffers":[73],"are":[74],"employed.":[75],"all-GaN":[77],"was":[80,105],"sized":[81],"to":[82,145],"minimise":[83],"response":[86,118,142],"time.":[87],"GaN":[89],"power":[90],"(GaN-IC)":[93],"includes":[94],"650V/10A":[96],"HEMT":[97],"operating":[98],"at":[99],"1":[100],"MHz.":[101],"performance":[104],"tested":[106],"through":[107],"pre-":[108],"post-layout":[110],"simulation":[111],"under":[112],"load":[113],"temperature":[115],"variations.":[116],"time":[119,143],"OCP,":[122],"including":[123],"parasitic":[124],"extraction":[125],"is":[126],"34":[127],"ns":[128],"current":[131],"limit":[132],"12":[134],"A.":[135],"OCP-IC":[137],"demonstrates":[138],"6%":[140],"faster":[141],"compared":[144],"state-of-the-art.":[147]},"counts_by_year":[{"year":2025,"cited_by_count":3}],"updated_date":"2026-08-26T07:47:46.906454","created_date":"2025-10-10T00:00:00"}