{"id":"https://openalex.org/W3086534698","doi":"https://doi.org/10.1109/sbcci50935.2020.9189914","title":"A 37 nW MOSFET-Only Voltage Reference in 0.13 \u03bcm CMOS","display_name":"A 37 nW MOSFET-Only Voltage Reference in 0.13 \u03bcm CMOS","publication_year":2020,"publication_date":"2020-08-01","ids":{"openalex":"https://openalex.org/W3086534698","doi":"https://doi.org/10.1109/sbcci50935.2020.9189914","mag":"3086534698"},"language":"en","primary_location":{"id":"doi:10.1109/sbcci50935.2020.9189914","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sbcci50935.2020.9189914","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 33rd Symposium on Integrated Circuits and Systems Design (SBCCI)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113653953","display_name":"Vanessa F. de Lima","orcid":null},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":true,"raw_author_name":"Vanessa F. de Lima","raw_affiliation_strings":["Microelectronics Graduate Program, UFRGS, Porto Alegre, RS, Brazil"],"affiliations":[{"raw_affiliation_string":"Microelectronics Graduate Program, UFRGS, Porto Alegre, RS, Brazil","institution_ids":["https://openalex.org/I130442723"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5026712887","display_name":"Hamilton Klimach","orcid":"https://orcid.org/0000-0003-2692-9371"},"institutions":[{"id":"https://openalex.org/I130442723","display_name":"Universidade Federal do Rio Grande do Sul","ror":"https://ror.org/041yk2d64","country_code":"BR","type":"education","lineage":["https://openalex.org/I130442723"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Hamilton Klimach","raw_affiliation_strings":["Electrical Engineering Department, UFRGS, Porto Alegre, RS, Brazil"],"affiliations":[{"raw_affiliation_string":"Electrical Engineering Department, UFRGS, Porto Alegre, RS, Brazil","institution_ids":["https://openalex.org/I130442723"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5113653953"],"corresponding_institution_ids":["https://openalex.org/I130442723"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.09617293,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":"3","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-supply-rejection-ratio","display_name":"Power supply rejection ratio","score":0.7402121424674988},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6889948844909668},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5858612060546875},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.5834921598434448},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5822846293449402},{"id":"https://openalex.org/keywords/sensitivity","display_name":"Sensitivity (control systems)","score":0.5723731517791748},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.5597223043441772},{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.5494335889816284},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.505500316619873},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4979684352874756},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.42440035939216614},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.42278972268104553},{"id":"https://openalex.org/keywords/generator","display_name":"Generator (circuit theory)","score":0.415298730134964},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3969497084617615},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35254260897636414},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3073277473449707},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2543461322784424},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.13060861825942993}],"concepts":[{"id":"https://openalex.org/C15892472","wikidata":"https://www.wikidata.org/wiki/Q1482413","display_name":"Power supply rejection ratio","level":4,"score":0.7402121424674988},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6889948844909668},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5858612060546875},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.5834921598434448},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5822846293449402},{"id":"https://openalex.org/C21200559","wikidata":"https://www.wikidata.org/wiki/Q7451068","display_name":"Sensitivity (control systems)","level":2,"score":0.5723731517791748},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.5597223043441772},{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.5494335889816284},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.505500316619873},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4979684352874756},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.42440035939216614},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.42278972268104553},{"id":"https://openalex.org/C2780992000","wikidata":"https://www.wikidata.org/wiki/Q17016113","display_name":"Generator (circuit theory)","level":3,"score":0.415298730134964},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3969497084617615},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35254260897636414},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3073277473449707},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2543461322784424},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.13060861825942993},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/sbcci50935.2020.9189914","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sbcci50935.2020.9189914","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 33rd Symposium on Integrated Circuits and Systems Design (SBCCI)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8899999856948853,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W126702502","https://openalex.org/W1533614470","https://openalex.org/W1675518556","https://openalex.org/W1997811146","https://openalex.org/W2014617689","https://openalex.org/W2021450859","https://openalex.org/W2025680864","https://openalex.org/W2104488319","https://openalex.org/W2114750951","https://openalex.org/W2134295016","https://openalex.org/W2139801901","https://openalex.org/W2141911137","https://openalex.org/W2146031070","https://openalex.org/W2146324717","https://openalex.org/W2337915607","https://openalex.org/W2340265200","https://openalex.org/W2572245080","https://openalex.org/W2625363942","https://openalex.org/W2803626158","https://openalex.org/W2891947715","https://openalex.org/W2904767126","https://openalex.org/W2921430961"],"related_works":["https://openalex.org/W3004564537","https://openalex.org/W2393887177","https://openalex.org/W2544323617","https://openalex.org/W2354567683","https://openalex.org/W2091010831","https://openalex.org/W2384491229","https://openalex.org/W2370976371","https://openalex.org/W1970992322","https://openalex.org/W2359862740","https://openalex.org/W2351074943"],"abstract_inverted_index":{"This":[0],"work":[1],"presents":[2],"the":[3,38,140],"design":[4,45],"of":[5,18,37,71,91,109,119],"a":[6,19,26,44,57,80,86,95,103,116,125],"MOS-only":[7],"voltage":[8,21,33,84],"reference":[9,83],"with":[10,25,85],"nano-watt":[11],"power":[12,72,104],"consumption.":[13],"The":[14,35,49,145],"proposed":[15,50],"circuit":[16,23,39,51],"consists":[17],"threshold":[20],"monitor":[22],"cascaded":[24],"high-slope":[27],"proportional":[28],"to":[29,100,131,138,142],"absolute":[30],"temperature":[31,88,96],"(PTAT)":[32],"generator.":[34],"operation":[36],"is":[40,47,149],"analytically":[41],"described":[42],"and":[43,54,115],"methodology":[46],"presented.":[48],"was":[52,122],"designed":[53],"simulated":[55],"in":[56],"standard":[58],"130":[59],"nm":[60],"CMOS":[61],"process":[62],"while":[63],"consuming":[64],"just":[65],"37":[66],"nW":[67],"under":[68],"1.2":[69],"V":[70,130],"supply":[73,105,126],"at":[74,112],"room":[75],"temperature.":[76],"Simulation":[77],"results":[78],"present":[79],"585":[81],"mV":[82],"typical":[87],"coefficient":[89],"(TC)":[90],"10.13":[92],"ppm/\u00b0C,":[93],"for":[94,124],"range":[97,127],"from":[98,128],"-40":[99],"125":[101],"\u00b0C,":[102],"rejection":[106],"ratio":[107],"(PSRR)":[108],"-54.41":[110],"dB":[111],"100":[113],"Hz,":[114],"line":[117],"sensitivity":[118,141],"0.071":[120],"%/V":[121],"found":[123],"1":[129],"1.8":[132],"V.":[133],"Monte-Carlo":[134],"simulations":[135],"are":[136],"presented":[137],"evaluate":[139],"fabrication":[143],"variability.":[144],"estimated":[146],"silicon":[147],"area":[148],"0.0078":[150],"mm":[151],"<sup":[152],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[153],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[154],".":[155]},"counts_by_year":[{"year":2024,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}