{"id":"https://openalex.org/W2901551528","doi":"https://doi.org/10.1109/sbcci.2018.8533253","title":"16NM 6T and 8T CMOS SRAM Cell Robustness Against Process Variability and Aging Effects","display_name":"16NM 6T and 8T CMOS SRAM Cell Robustness Against Process Variability and Aging Effects","publication_year":2018,"publication_date":"2018-08-01","ids":{"openalex":"https://openalex.org/W2901551528","doi":"https://doi.org/10.1109/sbcci.2018.8533253","mag":"2901551528"},"language":"en","primary_location":{"id":"doi:10.1109/sbcci.2018.8533253","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sbcci.2018.8533253","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 31st Symposium on Integrated Circuits and Systems Design (SBCCI)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071785584","display_name":"Roberto Borba de Almeida","orcid":null},"institutions":[{"id":"https://openalex.org/I126460647","display_name":"Universidade Federal do Rio Grande","ror":"https://ror.org/05hpfkn88","country_code":"BR","type":"education","lineage":["https://openalex.org/I126460647"]}],"countries":["BR"],"is_corresponding":true,"raw_author_name":"Roberto B. Almeida","raw_affiliation_strings":["Universidade Federal do Rio Grande \u2013 FURG, Centro de Ciencias Computacionais \u2013 C3"],"affiliations":[{"raw_affiliation_string":"Universidade Federal do Rio Grande \u2013 FURG, Centro de Ciencias Computacionais \u2013 C3","institution_ids":["https://openalex.org/I126460647"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062131940","display_name":"Paulo F. Butzen","orcid":"https://orcid.org/0000-0003-1587-7596"},"institutions":[{"id":"https://openalex.org/I126460647","display_name":"Universidade Federal do Rio Grande","ror":"https://ror.org/05hpfkn88","country_code":"BR","type":"education","lineage":["https://openalex.org/I126460647"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Paulo F. Butzen","raw_affiliation_strings":["Universidade Federal do Rio Grande \u2013 FURG, Centro de Ciencias Computacionais \u2013 C3"],"affiliations":[{"raw_affiliation_string":"Universidade Federal do Rio Grande \u2013 FURG, Centro de Ciencias Computacionais \u2013 C3","institution_ids":["https://openalex.org/I126460647"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5016825373","display_name":"Cristina Meinhardt","orcid":"https://orcid.org/0000-0003-1088-1000"},"institutions":[{"id":"https://openalex.org/I4104125","display_name":"Universidade Federal de Santa Catarina","ror":"https://ror.org/041akq887","country_code":"BR","type":"education","lineage":["https://openalex.org/I4104125"]}],"countries":["BR"],"is_corresponding":false,"raw_author_name":"Cristina Meinhardt","raw_affiliation_strings":["Departamento de Inform\u00e1tica e Estat\u00edstica, Universidade Federal de Santa Catarina\u2013UFSC"],"affiliations":[{"raw_affiliation_string":"Departamento de Inform\u00e1tica e Estat\u00edstica, Universidade Federal de Santa Catarina\u2013UFSC","institution_ids":["https://openalex.org/I4104125"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5071785584"],"corresponding_institution_ids":["https://openalex.org/I126460647"],"apc_list":null,"apc_paid":null,"fwci":0.1288,"has_fulltext":false,"cited_by_count":1,"citation_normalized_percentile":{"value":0.5004432,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"40","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.9089123010635376},{"id":"https://openalex.org/keywords/robustness","display_name":"Robustness (evolution)","score":0.8635483980178833},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5864150524139404},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5181394815444946},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.5046240091323853},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.503316342830658},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4926071763038635},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4362082779407501},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.3350868821144104},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.3309919834136963},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.26282501220703125},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.21080058813095093}],"concepts":[{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.9089123010635376},{"id":"https://openalex.org/C63479239","wikidata":"https://www.wikidata.org/wiki/Q7353546","display_name":"Robustness (evolution)","level":3,"score":0.8635483980178833},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5864150524139404},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5181394815444946},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.5046240091323853},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.503316342830658},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4926071763038635},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4362082779407501},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.3350868821144104},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.3309919834136963},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.26282501220703125},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.21080058813095093},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.0},{"id":"https://openalex.org/C104317684","wikidata":"https://www.wikidata.org/wiki/Q7187","display_name":"Gene","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C55493867","wikidata":"https://www.wikidata.org/wiki/Q7094","display_name":"Biochemistry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/sbcci.2018.8533253","is_oa":false,"landing_page_url":"https://doi.org/10.1109/sbcci.2018.8533253","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 31st Symposium on Integrated Circuits and Systems Design (SBCCI)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8899999856948853,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1482848577","https://openalex.org/W1753784006","https://openalex.org/W1969390180","https://openalex.org/W1969775801","https://openalex.org/W2002612140","https://openalex.org/W2022575517","https://openalex.org/W2023083767","https://openalex.org/W2069345435","https://openalex.org/W2107353844","https://openalex.org/W2121551247","https://openalex.org/W2144289559","https://openalex.org/W2147685203","https://openalex.org/W2294760547","https://openalex.org/W2343627454","https://openalex.org/W2584544613","https://openalex.org/W2585537364","https://openalex.org/W2609881373","https://openalex.org/W2700223188","https://openalex.org/W2735969009","https://openalex.org/W2766490181","https://openalex.org/W3139721564","https://openalex.org/W6733050262"],"related_works":["https://openalex.org/W2119312496","https://openalex.org/W4247460323","https://openalex.org/W2537086382","https://openalex.org/W2107909712","https://openalex.org/W2153162275","https://openalex.org/W2079259690","https://openalex.org/W2770593030","https://openalex.org/W789543267","https://openalex.org/W2075972383","https://openalex.org/W2108986771"],"abstract_inverted_index":{"At":[0],"nanometer":[1],"nodes,":[2],"process":[3],"variability":[4,59],"and":[5,21,49,60,65,72],"BTI":[6],"effect":[7],"affect":[8],"the":[9,29,43,56],"SRAM":[10,13,26,46],"design.":[11],"Thus,":[12],"design":[14],"at":[15,87,100,109],"16nm":[16],"must":[17],"consider":[18],"these":[19],"impacts":[20],"explore":[22],"alternatives":[23],"to":[24,54,80],"enhance":[25],"robustness.":[27],"Also,":[28],"advent":[30],"of":[31,58,82,94,97],"portable":[32],"computing":[33],"requires":[34],"circuit":[35],"with":[36],"low":[37],"power":[38],"consumption.":[39],"This":[40],"work":[41],"investigates":[42],"most":[44],"used":[45],"cell,":[47],"6T,":[48],"an":[50,92],"alternative":[51],"8T":[52],"cell":[53,86],"compare":[55],"effects":[57],"aging":[61],"on":[62,84],"power,":[63],"timing":[64],"noise":[66],"margins,":[67],"when":[68],"operating":[69],"in":[70],"nominal":[71,110],"near-threshold":[73,88,101],"supply":[74],"voltage.":[75],"Process":[76],"variations":[77],"showed":[78],"up":[79],"100%":[81],"deviation":[83],"6T":[85,98],"operation.":[89,111],"Aging":[90],"presented":[91],"improvement":[93],"about":[95],"175%":[96],"RSNM":[99],"operation":[102],"after":[103],"5":[104],"years":[105],"but":[106],"reduces":[107],"10%":[108]},"counts_by_year":[{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}