{"id":"https://openalex.org/W4391991858","doi":"https://doi.org/10.1109/rws56914.2024.10438627","title":"A Wideband 2.18-13.51 GHz Ultra-Low Additive Phase Noise Power Amplifier in InP 250nm HBT","display_name":"A Wideband 2.18-13.51 GHz Ultra-Low Additive Phase Noise Power Amplifier in InP 250nm HBT","publication_year":2024,"publication_date":"2024-01-21","ids":{"openalex":"https://openalex.org/W4391991858","doi":"https://doi.org/10.1109/rws56914.2024.10438627"},"language":"en","primary_location":{"id":"doi:10.1109/rws56914.2024.10438627","is_oa":false,"landing_page_url":"https://doi.org/10.1109/rws56914.2024.10438627","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Radio and Wireless Symposium (RWS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5092499000","display_name":"Pedram Shirmohammadi","orcid":"https://orcid.org/0009-0000-5582-7185"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Pedram Shirmohammadi","raw_affiliation_strings":["University Of Virginia,Electrical and Computer Engineering Department,Charlottesville,USA","Electrical and Computer Engineering Department, University Of Virginia, Charlottesville, USA"],"affiliations":[{"raw_affiliation_string":"University Of Virginia,Electrical and Computer Engineering Department,Charlottesville,USA","institution_ids":["https://openalex.org/I51556381"]},{"raw_affiliation_string":"Electrical and Computer Engineering Department, University Of Virginia, Charlottesville, USA","institution_ids":["https://openalex.org/I51556381"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5073617259","display_name":"Steven M. Bowers","orcid":"https://orcid.org/0000-0002-4243-8663"},"institutions":[{"id":"https://openalex.org/I51556381","display_name":"University of Virginia","ror":"https://ror.org/0153tk833","country_code":"US","type":"education","lineage":["https://openalex.org/I51556381"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Steven M. Bowers","raw_affiliation_strings":["University Of Virginia,Electrical and Computer Engineering Department,Charlottesville,USA","Electrical and Computer Engineering Department, University Of Virginia, Charlottesville, USA"],"affiliations":[{"raw_affiliation_string":"University Of Virginia,Electrical and Computer Engineering Department,Charlottesville,USA","institution_ids":["https://openalex.org/I51556381"]},{"raw_affiliation_string":"Electrical and Computer Engineering Department, University Of Virginia, Charlottesville, USA","institution_ids":["https://openalex.org/I51556381"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5092499000"],"corresponding_institution_ids":["https://openalex.org/I51556381"],"apc_list":null,"apc_paid":null,"fwci":0.4449,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.5909613,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":null,"issue":null,"first_page":"16","last_page":"18"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9926999807357788,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9776999950408936,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11429","display_name":"Semiconductor Lasers and Optical Devices","score":0.9717000126838684,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.8868740797042847},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.642055332660675},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.6062860488891602},{"id":"https://openalex.org/keywords/phase-noise","display_name":"Phase noise","score":0.48593607544898987},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4715462028980255},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4665375053882599},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4064636826515198},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17323139309883118},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.08308455348014832},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0692291259765625},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.06569898128509521}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.8868740797042847},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.642055332660675},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.6062860488891602},{"id":"https://openalex.org/C89631360","wikidata":"https://www.wikidata.org/wiki/Q1428766","display_name":"Phase noise","level":2,"score":0.48593607544898987},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4715462028980255},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4665375053882599},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4064636826515198},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17323139309883118},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08308455348014832},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0692291259765625},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.06569898128509521},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/rws56914.2024.10438627","is_oa":false,"landing_page_url":"https://doi.org/10.1109/rws56914.2024.10438627","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2024 IEEE Radio and Wireless Symposium (RWS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8899999856948853,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1971641296","https://openalex.org/W2075383763","https://openalex.org/W2079266939","https://openalex.org/W2082211203","https://openalex.org/W2105111630","https://openalex.org/W2110475011","https://openalex.org/W2534013707","https://openalex.org/W4378464673","https://openalex.org/W4385356858","https://openalex.org/W4392500162","https://openalex.org/W6852935490","https://openalex.org/W6855279181"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W3043943092","https://openalex.org/W2368164343","https://openalex.org/W2394466813","https://openalex.org/W140953913","https://openalex.org/W2121237150","https://openalex.org/W2164043698","https://openalex.org/W2024768090","https://openalex.org/W2547591812","https://openalex.org/W2021011313"],"abstract_inverted_index":{"A":[0],"250":[1],"nm":[2],"InP":[3,42],"heterojunction":[4],"bipolar":[5],"transistor":[6],"(HBT)":[7],"power":[8,31,58,113],"amplifier":[9],"(PA)":[10],"featuring":[11],"low":[12,35,44],"additive":[13,62,75],"phase":[14,36,63,76],"noise":[15,37,64,77,138],"over":[16],"a":[17,83,94,106,115],"wide":[18],"range":[19],"of":[20,27,41,68,108,118,132],"frequencies":[21],"is":[22],"demonstrated.":[23],"The":[24,66,125],"PA":[25,71,104],"consists":[26],"parallel":[28],"unit":[29],"cells":[30],"combined":[32],"to":[33,51],"obtain":[34],"by":[38],"taking":[39],"advantage":[40],"HBT":[43],"near-DC":[45],"noise.":[46],"Design":[47],"techniques":[48],"are":[49],"explored":[50],"enhance":[52],"the":[53,61,69,100,129],"gain":[54,117],"and":[55,114,136],"deliverable":[56],"output":[57,112],"while":[59,87],"keeping":[60],"low.":[65],"measurements":[67],"proposed":[70],"illustrate":[72],"\u2212150.0":[73],"dBc/Hz":[74],"at":[78,121],"10":[79,84,122],"kHz":[80],"offset":[81],"from":[82,93],"GHz":[85,123],"carrier":[86],"drawing":[88],"54.4":[89],"mA":[90],"DC":[91],"current":[92],"3.1":[95],"V":[96],"collector":[97],"supply":[98],"in":[99],"compression":[101],"point;":[102],"moreover,":[103],"delivers":[105],"maximum":[107],"18.1":[109],"dBm":[110],"saturation":[111],"peak":[116],"16.7":[119],"dB":[120],"frequency.":[124],"presented":[126],"results":[127],"demonstrate":[128],"excellent":[130],"capabilities":[131],"InP-HBT":[133],"for":[134],"high-power":[135],"low-phase":[137],"applications.":[139]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}