{"id":"https://openalex.org/W3129193888","doi":"https://doi.org/10.1109/rws50353.2021.9360354","title":"Comprehensive Physics-Based Model for Millimeterwave Transistors","display_name":"Comprehensive Physics-Based Model for Millimeterwave Transistors","publication_year":2021,"publication_date":"2021-01-17","ids":{"openalex":"https://openalex.org/W3129193888","doi":"https://doi.org/10.1109/rws50353.2021.9360354","mag":"3129193888"},"language":"en","primary_location":{"id":"doi:10.1109/rws50353.2021.9360354","is_oa":false,"landing_page_url":"https://doi.org/10.1109/rws50353.2021.9360354","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE Radio and Wireless Symposium (RWS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5029038307","display_name":"Soheil Nouri","orcid":"https://orcid.org/0000-0001-9726-8051"},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Soheil Nouri","raw_affiliation_strings":["Department of Electrical Engineering, University of Arkansas, Fayetteville, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Arkansas, Fayetteville, USA","institution_ids":["https://openalex.org/I78715868"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5083369632","display_name":"Samir El\u2010Ghazaly","orcid":"https://orcid.org/0000-0002-3410-2377"},"institutions":[{"id":"https://openalex.org/I78715868","display_name":"University of Arkansas at Fayetteville","ror":"https://ror.org/05jbt9m15","country_code":"US","type":"education","lineage":["https://openalex.org/I78715868"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Samir M. El-Ghazaly","raw_affiliation_strings":["Department of Electrical Engineering, University of Arkansas, Fayetteville, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, University of Arkansas, Fayetteville, USA","institution_ids":["https://openalex.org/I78715868"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5029038307"],"corresponding_institution_ids":["https://openalex.org/I78715868"],"apc_list":null,"apc_paid":null,"fwci":0.8022,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.70731954,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"29","last_page":"31"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9965999722480774,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7342548370361328},{"id":"https://openalex.org/keywords/transmission-line","display_name":"Transmission line","score":0.6477464437484741},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.6303272247314453},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.5830744504928589},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5621318817138672},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.48774200677871704},{"id":"https://openalex.org/keywords/line","display_name":"Line (geometry)","score":0.4828372597694397},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.4390442371368408},{"id":"https://openalex.org/keywords/transmission","display_name":"Transmission (telecommunications)","score":0.4244420528411865},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.30302977561950684},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.232923686504364},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21662607789039612},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16372886300086975},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.1460440754890442},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.1356356143951416},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.12384968996047974}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7342548370361328},{"id":"https://openalex.org/C33441834","wikidata":"https://www.wikidata.org/wiki/Q693004","display_name":"Transmission line","level":2,"score":0.6477464437484741},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.6303272247314453},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.5830744504928589},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5621318817138672},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.48774200677871704},{"id":"https://openalex.org/C198352243","wikidata":"https://www.wikidata.org/wiki/Q37105","display_name":"Line (geometry)","level":2,"score":0.4828372597694397},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.4390442371368408},{"id":"https://openalex.org/C761482","wikidata":"https://www.wikidata.org/wiki/Q118093","display_name":"Transmission (telecommunications)","level":2,"score":0.4244420528411865},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.30302977561950684},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.232923686504364},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21662607789039612},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16372886300086975},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.1460440754890442},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.1356356143951416},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.12384968996047974},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/rws50353.2021.9360354","is_oa":false,"landing_page_url":"https://doi.org/10.1109/rws50353.2021.9360354","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2021 IEEE Radio and Wireless Symposium (RWS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6399999856948853,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320338281","display_name":"Army Research Office","ror":"https://ror.org/05epdh915"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W2041421844","https://openalex.org/W2111975191","https://openalex.org/W2288128541","https://openalex.org/W2510038517","https://openalex.org/W2523908063","https://openalex.org/W2616890294","https://openalex.org/W2810082117","https://openalex.org/W2946214034","https://openalex.org/W2982696334"],"related_works":["https://openalex.org/W939514953","https://openalex.org/W2323418721","https://openalex.org/W32880778","https://openalex.org/W2103773526","https://openalex.org/W3173836265","https://openalex.org/W2785829451","https://openalex.org/W2049242586","https://openalex.org/W2161299897","https://openalex.org/W1863793630","https://openalex.org/W1571872413"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,64],"novel":[4],"comprehensive":[5],"model":[6,22,98],"for":[7,24,82,121,130],"analyzing":[8],"devices":[9],"at":[10],"the":[11,40,44,48,74,83,88,91,96,104,108,127,135],"W-band":[12],"and":[13,27,137],"beyond.":[14],"The":[15,57,68,93],"presented":[16],"simulation":[17,105],"scheme":[18],"makes":[19],"this":[20,32],"physics-based":[21],"suitable":[23],"both":[25],"small-":[26],"large-signal":[28],"analysis":[29,117],"purposes.":[30],"In":[31],"approach,":[33],"there":[34],"is":[35,47,78],"no":[36],"need":[37],"to":[38,80,125],"extract":[39],"intrinsic":[41],"parameters":[42],"of":[43,51,90,95],"transistor":[45],"that":[46],"main":[49],"cause":[50],"inaccuracy":[52],"in":[53,134],"other":[54],"modeling":[55],"techniques.":[56],"semiconductor":[58],"transport":[59],"aspects":[60],"are":[61],"modeled":[62],"using":[63],"spatially-distributed":[65],"time-domain":[66],"simulation.":[67],"transmission":[69],"line":[70],"theory":[71],"together":[72],"with":[73,107],"finite":[75],"difference":[76],"method":[77],"utilized":[79],"account":[81],"wave":[84],"propagation":[85],"effects":[86],"over":[87],"electrodes":[89],"transistors.":[92],"validity":[94],"proposed":[97],"has":[99,118],"been":[100,119],"evaluated":[101],"by":[102],"comparing":[103],"results":[106],"measured":[109],"data":[110],"from":[111],"fabricated":[112],"devices.":[113],"A":[114],"power":[115],"sweep":[116],"conducted":[120],"two":[122],"different":[123],"frequencies":[124],"demonstrate":[126],"model's":[128],"potential":[129],"simulating":[131],"device":[132],"performance":[133],"linear":[136],"nonlinear":[138],"regions.":[139]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}