{"id":"https://openalex.org/W1557332185","doi":"https://doi.org/10.1109/retis.2015.7232926","title":"Strained Si: Opportunities and challenges in nanoscale MOSFET","display_name":"Strained Si: Opportunities and challenges in nanoscale MOSFET","publication_year":2015,"publication_date":"2015-07-01","ids":{"openalex":"https://openalex.org/W1557332185","doi":"https://doi.org/10.1109/retis.2015.7232926","mag":"1557332185"},"language":"en","primary_location":{"id":"doi:10.1109/retis.2015.7232926","is_oa":false,"landing_page_url":"https://doi.org/10.1109/retis.2015.7232926","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 2nd International Conference on Recent Trends in Information Systems (ReTIS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5006321815","display_name":"Rajneesh Sharma","orcid":"https://orcid.org/0000-0003-3182-8700"},"institutions":[{"id":"https://openalex.org/I36909309","display_name":"National Institute of Technology Hamirpur","ror":"https://ror.org/01nc8zs04","country_code":"IN","type":"education","lineage":["https://openalex.org/I36909309","https://openalex.org/I4210152752"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Rajneesh Sharma","raw_affiliation_strings":["Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur, H.P., India","Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur (H.P.), India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur, H.P., India","institution_ids":["https://openalex.org/I36909309"]},{"raw_affiliation_string":"Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur (H.P.), India","institution_ids":["https://openalex.org/I36909309"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089094902","display_name":"Ashwani K. Rana","orcid":"https://orcid.org/0000-0002-7602-8785"},"institutions":[{"id":"https://openalex.org/I36909309","display_name":"National Institute of Technology Hamirpur","ror":"https://ror.org/01nc8zs04","country_code":"IN","type":"education","lineage":["https://openalex.org/I36909309","https://openalex.org/I4210152752"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ashwani K. Rana","raw_affiliation_strings":["Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur, H.P., India","Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur (H.P.), India"],"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur, H.P., India","institution_ids":["https://openalex.org/I36909309"]},{"raw_affiliation_string":"Department of Electronics and Communication, National Institute of Technology, Hamirpur, Hamirpur (H.P.), India","institution_ids":["https://openalex.org/I36909309"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5006321815"],"corresponding_institution_ids":["https://openalex.org/I36909309"],"apc_list":null,"apc_paid":null,"fwci":0.9864,"has_fulltext":false,"cited_by_count":12,"citation_normalized_percentile":{"value":0.78284093,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":null,"issue":null,"first_page":"475","last_page":"480"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T14117","display_name":"Integrated Circuits and Semiconductor Failure Analysis","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.8270108103752136},{"id":"https://openalex.org/keywords/nanoscopic-scale","display_name":"Nanoscopic scale","score":0.7038041353225708},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.48435840010643005},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.44569069147109985},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.42272573709487915},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3664909899234772},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35462796688079834},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.24123618006706238},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19951462745666504},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1863970160484314},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13768628239631653}],"concepts":[{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.8270108103752136},{"id":"https://openalex.org/C45206210","wikidata":"https://www.wikidata.org/wiki/Q2415817","display_name":"Nanoscopic scale","level":2,"score":0.7038041353225708},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48435840010643005},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.44569069147109985},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.42272573709487915},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3664909899234772},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35462796688079834},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.24123618006706238},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19951462745666504},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1863970160484314},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13768628239631653},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/retis.2015.7232926","is_oa":false,"landing_page_url":"https://doi.org/10.1109/retis.2015.7232926","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE 2nd International Conference on Recent Trends in Information Systems (ReTIS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":43,"referenced_works":["https://openalex.org/W428916542","https://openalex.org/W618163585","https://openalex.org/W750913404","https://openalex.org/W1997413372","https://openalex.org/W2002257666","https://openalex.org/W2005389841","https://openalex.org/W2009208319","https://openalex.org/W2014494940","https://openalex.org/W2024820277","https://openalex.org/W2026538980","https://openalex.org/W2032199971","https://openalex.org/W2069925673","https://openalex.org/W2071003649","https://openalex.org/W2075247018","https://openalex.org/W2079027740","https://openalex.org/W2086328585","https://openalex.org/W2090454364","https://openalex.org/W2097207701","https://openalex.org/W2101609668","https://openalex.org/W2109163709","https://openalex.org/W2111815002","https://openalex.org/W2114640406","https://openalex.org/W2125951726","https://openalex.org/W2128813651","https://openalex.org/W2138463943","https://openalex.org/W2139990648","https://openalex.org/W2147200307","https://openalex.org/W2151455206","https://openalex.org/W2154869256","https://openalex.org/W2157926832","https://openalex.org/W2160126076","https://openalex.org/W2171488307","https://openalex.org/W2329735910","https://openalex.org/W3139757320","https://openalex.org/W3144771626","https://openalex.org/W3203992401","https://openalex.org/W4238618429","https://openalex.org/W6614863536","https://openalex.org/W6619487221","https://openalex.org/W6654131093","https://openalex.org/W6656594533","https://openalex.org/W6683603479","https://openalex.org/W6684564406"],"related_works":["https://openalex.org/W2965295431","https://openalex.org/W2254931227","https://openalex.org/W4319440797","https://openalex.org/W2225406648","https://openalex.org/W2386785728","https://openalex.org/W2078152308","https://openalex.org/W1928888444","https://openalex.org/W1526208995","https://openalex.org/W4321379269","https://openalex.org/W1556217118"],"abstract_inverted_index":{"For":[0],"the":[1,5,11,26,33,52,85,106,124,144,166,170],"nanoscale":[2,38,91,130,148,174],"MOSFET":[3,40,131,175],"technology,":[4],"strain":[6,53,110,127,167],"engineering":[7,54,66,168],"is":[8],"emerge":[9],"as":[10],"most":[12],"important":[13],"performance":[14,47,58,88],"booster":[15,59],"technique":[16],"in":[17,44,90,129,157],"terms":[18,45],"of":[19,35,46,126,147,152,173],"carrier":[20],"mobility,":[21],"low":[22],"scattering":[23],"and":[24,49,76,102,117,160],"consequently":[25],"high":[27],"on":[28,99],"current.":[29],"In":[30,93],"this":[31],"paper,":[32],"state":[34],"art":[36],"for":[37,87,114],"strained":[39,149,153],"has":[41,139],"been":[42,81,140],"reviewed":[43],"improvement":[48],"manufacturability.":[50],"Further,":[51],"along":[55],"with":[56],"advanced":[57],"technique/structure,":[60],"raised":[61],"Source/Drain":[62],"(S/D),":[63],"S/D":[64],"extension":[65],"(underlap":[67],"structure),":[68],"High-K/Metal-gate,":[69],"Extremely":[70],"Thin":[71],"Silicon":[72],"On":[73],"Insulator":[74],"(ETSOI)":[75],"multigate":[77],"device":[78],"structure,":[79],"have":[80],"studied":[82],"to":[83,105,142,177],"provide":[84,111],"guidelines":[86],"enhancement":[89,113],"devices.":[92],"above":[94],"cases,":[95],"we":[96],"will":[97],"focus":[98],"reliability,":[100],"advantages":[101],"probable":[103],"solutions":[104],"related":[107],"issues.":[108],"Although":[109],"mobility":[112,155],"both":[115],"NMOS":[116],"PMOS":[118],"without":[119,182],"alleviating":[120],"leakage":[121],"current":[122],"but":[123],"use":[125],"Si":[128],"still":[132],"create":[133],"new":[134],"challenges.":[135],"The":[136,162],"literature":[137],"review":[138,163],"extended":[141],"cover":[143],"various":[145,179],"challenges":[146],"MOSFET,":[150,154],"scaling":[151],"limitation":[156],"ballistic":[158],"range":[159],"self-heating.":[161],"signify":[164],"that":[165],"become":[169],"integral":[171],"part":[172],"due":[176],"its":[178],"potential":[180],"benefits":[181],"much":[183],"fabrication":[184],"overhead.":[185]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":4},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}