{"id":"https://openalex.org/W2964954054","doi":"https://doi.org/10.1109/prime.2019.8787800","title":"A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology","display_name":"A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology","publication_year":2019,"publication_date":"2019-07-01","ids":{"openalex":"https://openalex.org/W2964954054","doi":"https://doi.org/10.1109/prime.2019.8787800","mag":"2964954054"},"language":"en","primary_location":{"id":"doi:10.1109/prime.2019.8787800","is_oa":false,"landing_page_url":"https://doi.org/10.1109/prime.2019.8787800","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5071594387","display_name":"Lorenzo Pace","orcid":"https://orcid.org/0000-0002-7618-6919"},"institutions":[{"id":"https://openalex.org/I116067653","display_name":"University of Rome Tor Vergata","ror":"https://ror.org/02p77k626","country_code":"IT","type":"education","lineage":["https://openalex.org/I116067653"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Lorenzo Pace","raw_affiliation_strings":["Electronic Engineering Dept., University of Roma Tor Vergata, Rome, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Engineering Dept., University of Roma Tor Vergata, Rome, Italy","institution_ids":["https://openalex.org/I116067653"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075136497","display_name":"Walter Ciccognani","orcid":"https://orcid.org/0000-0002-8027-2449"},"institutions":[{"id":"https://openalex.org/I116067653","display_name":"University of Rome Tor Vergata","ror":"https://ror.org/02p77k626","country_code":"IT","type":"education","lineage":["https://openalex.org/I116067653"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Walter Ciccognani","raw_affiliation_strings":["Electronic Engineering Dept., University of Roma Tor Vergata, Rome, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Engineering Dept., University of Roma Tor Vergata, Rome, Italy","institution_ids":["https://openalex.org/I116067653"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006772560","display_name":"Sergio Colangeli","orcid":"https://orcid.org/0000-0001-6609-2452"},"institutions":[{"id":"https://openalex.org/I116067653","display_name":"University of Rome Tor Vergata","ror":"https://ror.org/02p77k626","country_code":"IT","type":"education","lineage":["https://openalex.org/I116067653"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Sergio Colangeli","raw_affiliation_strings":["Electronic Engineering Dept., University of Roma Tor Vergata, Rome, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Engineering Dept., University of Roma Tor Vergata, Rome, Italy","institution_ids":["https://openalex.org/I116067653"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5019146307","display_name":"Patrick E. Longhi","orcid":"https://orcid.org/0000-0003-0923-5917"},"institutions":[{"id":"https://openalex.org/I116067653","display_name":"University of Rome Tor Vergata","ror":"https://ror.org/02p77k626","country_code":"IT","type":"education","lineage":["https://openalex.org/I116067653"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Patrick Ettore Longhi","raw_affiliation_strings":["Electronic Engineering Dept., University of Roma Tor Vergata, Rome, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Engineering Dept., University of Roma Tor Vergata, Rome, Italy","institution_ids":["https://openalex.org/I116067653"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057631769","display_name":"Ernesto Limiti","orcid":"https://orcid.org/0000-0003-4668-7461"},"institutions":[{"id":"https://openalex.org/I116067653","display_name":"University of Rome Tor Vergata","ror":"https://ror.org/02p77k626","country_code":"IT","type":"education","lineage":["https://openalex.org/I116067653"]}],"countries":["IT"],"is_corresponding":false,"raw_author_name":"Ernesto Limiti","raw_affiliation_strings":["Electronic Engineering Dept, University of Roma Tor Vergata, Rome, Italy"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Electronic Engineering Dept, University of Roma Tor Vergata, Rome, Italy","institution_ids":["https://openalex.org/I116067653"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5006810717","display_name":"R\u00e9my Leblanc","orcid":null},"institutions":[{"id":"https://openalex.org/I4210163009","display_name":"Ommic (France)","ror":"https://ror.org/05x9bmy83","country_code":"FR","type":"company","lineage":["https://openalex.org/I4210163009"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Remy Leblanc","raw_affiliation_strings":["OMMIC SAS, 94453 Limeil Br\u00e9vannes, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"OMMIC SAS, 94453 Limeil Br\u00e9vannes, France","institution_ids":["https://openalex.org/I4210163009"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.0898,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.78253813,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"161","last_page":"164"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10022","display_name":"Semiconductor Quantum Structures and Devices","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/low-noise-amplifier","display_name":"Low-noise amplifier","score":0.7666493654251099},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.7320614457130432},{"id":"https://openalex.org/keywords/monolithic-microwave-integrated-circuit","display_name":"Monolithic microwave integrated circuit","score":0.6870673894882202},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.6249913573265076},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6122865676879883},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6089186668395996},{"id":"https://openalex.org/keywords/y-factor","display_name":"Y-factor","score":0.5992616415023804},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.5620793104171753},{"id":"https://openalex.org/keywords/noise-figure-meter","display_name":"Noise-figure meter","score":0.5335766673088074},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.49171048402786255},{"id":"https://openalex.org/keywords/ka-band","display_name":"Ka band","score":0.4804260730743408},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4566764533519745},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.45079803466796875},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.43621954321861267},{"id":"https://openalex.org/keywords/effective-input-noise-temperature","display_name":"Effective input noise temperature","score":0.41789981722831726},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4165370464324951},{"id":"https://openalex.org/keywords/noise-temperature","display_name":"Noise temperature","score":0.41251468658447266},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.40959689021110535},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.38835999369621277},{"id":"https://openalex.org/keywords/microwave","display_name":"Microwave","score":0.2796546220779419},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.23751980066299438},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.2268923819065094},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.22569549083709717},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.21371418237686157}],"concepts":[{"id":"https://openalex.org/C155332784","wikidata":"https://www.wikidata.org/wiki/Q1151304","display_name":"Low-noise amplifier","level":4,"score":0.7666493654251099},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.7320614457130432},{"id":"https://openalex.org/C128450285","wikidata":"https://www.wikidata.org/wiki/Q1945036","display_name":"Monolithic microwave integrated circuit","level":4,"score":0.6870673894882202},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.6249913573265076},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6122865676879883},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6089186668395996},{"id":"https://openalex.org/C166576357","wikidata":"https://www.wikidata.org/wiki/Q8045715","display_name":"Y-factor","level":5,"score":0.5992616415023804},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.5620793104171753},{"id":"https://openalex.org/C90166738","wikidata":"https://www.wikidata.org/wiki/Q7047656","display_name":"Noise-figure meter","level":5,"score":0.5335766673088074},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.49171048402786255},{"id":"https://openalex.org/C2777720951","wikidata":"https://www.wikidata.org/wiki/Q967772","display_name":"Ka band","level":2,"score":0.4804260730743408},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4566764533519745},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.45079803466796875},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.43621954321861267},{"id":"https://openalex.org/C12252657","wikidata":"https://www.wikidata.org/wiki/Q5347266","display_name":"Effective input noise temperature","level":5,"score":0.41789981722831726},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4165370464324951},{"id":"https://openalex.org/C52660251","wikidata":"https://www.wikidata.org/wiki/Q17083145","display_name":"Noise temperature","level":3,"score":0.41251468658447266},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.40959689021110535},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.38835999369621277},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.2796546220779419},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.23751980066299438},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.2268923819065094},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.22569549083709717},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.21371418237686157},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/prime.2019.8787800","is_oa":false,"landing_page_url":"https://doi.org/10.1109/prime.2019.8787800","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)","raw_type":"proceedings-article"},{"id":"pmh:oai:art.torvergata.it:2108/225821","is_oa":false,"landing_page_url":"http://hdl.handle.net/2108/225821","pdf_url":null,"source":{"id":"https://openalex.org/S4306400993","display_name":"Cineca Institutional Research Information System (Tor Vergata University)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I116067653","host_organization_name":"University of Rome Tor Vergata","host_organization_lineage":["https://openalex.org/I116067653"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/conferenceObject"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.4099999964237213,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320300","display_name":"European Commission","ror":"https://ror.org/00k4n6c32"},{"id":"https://openalex.org/F4320332999","display_name":"Horizon 2020 Framework Programme","ror":"https://ror.org/00k4n6c32"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1549469853","https://openalex.org/W1646946344","https://openalex.org/W2075521205","https://openalex.org/W2078384030","https://openalex.org/W2104514027","https://openalex.org/W2105460354","https://openalex.org/W2132539505","https://openalex.org/W2141969290","https://openalex.org/W2146548200","https://openalex.org/W2147818637","https://openalex.org/W2148085409","https://openalex.org/W2555166703","https://openalex.org/W2555582969","https://openalex.org/W2735592839","https://openalex.org/W2781579304","https://openalex.org/W2782814219","https://openalex.org/W2885217779","https://openalex.org/W2914978905","https://openalex.org/W4241739310","https://openalex.org/W6747260543"],"related_works":["https://openalex.org/W1993596838","https://openalex.org/W2131553985","https://openalex.org/W1993664839","https://openalex.org/W2118931924","https://openalex.org/W2165129972","https://openalex.org/W4281727447","https://openalex.org/W2102941066","https://openalex.org/W2038032318","https://openalex.org/W91122889","https://openalex.org/W4243333603"],"abstract_inverted_index":{"In":[0],"this":[1],"paper":[2],"a":[3,16,22,51,62],"MMIC":[4],"Low-Noise":[5],"Amplifier":[6],"operating":[7,74],"in":[8,71],"Ka-band":[9],"is":[10,15],"presented.":[11],"The":[12,46],"chosen":[13,81],"technology":[14,82],"100":[17],"nm":[18],"GaN":[19],"HEMT":[20],"on":[21,32],"High":[23],"Resistivity":[24],"Silicon":[25],"substrate.":[26],"A":[27],"fully":[28],"deterministic":[29],"approach":[30],"based":[31],"constant":[33],"mismatch":[34],"circles":[35],"has":[36],"been":[37],"used":[38],"for":[39],"the":[40,72,77,80],"preliminary":[41],"synthesis":[42],"of":[43,65,79],"matching":[44,56],"networks.":[45],"designed":[47],"four-stages":[48],"LNA":[49],"presents":[50],"33":[52],"dB":[53,60,70],"gain,":[54],"Input/Output":[55],"better":[57],"than":[58,68],"21":[59],"and":[61,87],"Noise":[63],"Figure":[64],"no":[66],"more":[67],"2.3":[69],"whole":[73],"band,":[75],"showing":[76],"suitability":[78],"to":[83],"low-noise,":[84],"high":[85],"gain":[86],"linearity":[88],"applications.":[89]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}