{"id":"https://openalex.org/W2885707864","doi":"https://doi.org/10.1109/prime.2018.8430368","title":"A ZTC-based 0.5V CMOS Voltage Reference","display_name":"A ZTC-based 0.5V CMOS Voltage Reference","publication_year":2018,"publication_date":"2018-07-01","ids":{"openalex":"https://openalex.org/W2885707864","doi":"https://doi.org/10.1109/prime.2018.8430368","mag":"2885707864"},"language":"en","primary_location":{"id":"doi:10.1109/prime.2018.8430368","is_oa":false,"landing_page_url":"https://doi.org/10.1109/prime.2018.8430368","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058265244","display_name":"Yannick Wenger","orcid":"https://orcid.org/0000-0001-7521-6461"},"institutions":[{"id":"https://openalex.org/I94509681","display_name":"Technische Universit\u00e4t Braunschweig","ror":"https://ror.org/010nsgg66","country_code":"DE","type":"education","lineage":["https://openalex.org/I94509681"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Y. Wenger","raw_affiliation_strings":["Institute for Electron Devices and Circuits, Technical University Braunschweig, Hans-Sommer-Str. 66, Braunschweig, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Electron Devices and Circuits, Technical University Braunschweig, Hans-Sommer-Str. 66, Braunschweig, Germany","institution_ids":["https://openalex.org/I94509681"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056253634","display_name":"B. Meinerzhagen","orcid":"https://orcid.org/0000-0002-2622-6732"},"institutions":[{"id":"https://openalex.org/I94509681","display_name":"Technische Universit\u00e4t Braunschweig","ror":"https://ror.org/010nsgg66","country_code":"DE","type":"education","lineage":["https://openalex.org/I94509681"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"B. Meinerzhagen","raw_affiliation_strings":["Institute for Electron Devices and Circuits, Technical University Braunschweig, Hans-Sommer-Str. 66, Braunschweig, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute for Electron Devices and Circuits, Technical University Braunschweig, Hans-Sommer-Str. 66, Braunschweig, Germany","institution_ids":["https://openalex.org/I94509681"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I94509681"],"apc_list":null,"apc_paid":null,"fwci":0.1115,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.45506378,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"17","last_page":"20"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/power-supply-rejection-ratio","display_name":"Power supply rejection ratio","score":0.8127219676971436},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6760768890380859},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.6710848212242126},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.6375889182090759},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5949275493621826},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5428793430328369},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.48969200253486633},{"id":"https://openalex.org/keywords/temperature-coefficient","display_name":"Temperature coefficient","score":0.47509777545928955},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.45849502086639404},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.44380757212638855},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4293777346611023},{"id":"https://openalex.org/keywords/bandgap-voltage-reference","display_name":"Bandgap voltage reference","score":0.4246140122413635},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.363838255405426},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.319200336933136},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.2764325737953186},{"id":"https://openalex.org/keywords/switched-mode-power-supply","display_name":"Switched-mode power supply","score":0.2133723795413971},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14740130305290222}],"concepts":[{"id":"https://openalex.org/C15892472","wikidata":"https://www.wikidata.org/wiki/Q1482413","display_name":"Power supply rejection ratio","level":4,"score":0.8127219676971436},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6760768890380859},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.6710848212242126},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.6375889182090759},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5949275493621826},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5428793430328369},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.48969200253486633},{"id":"https://openalex.org/C16643434","wikidata":"https://www.wikidata.org/wiki/Q898642","display_name":"Temperature coefficient","level":2,"score":0.47509777545928955},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.45849502086639404},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.44380757212638855},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4293777346611023},{"id":"https://openalex.org/C127033052","wikidata":"https://www.wikidata.org/wiki/Q48635","display_name":"Bandgap voltage reference","level":5,"score":0.4246140122413635},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.363838255405426},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.319200336933136},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.2764325737953186},{"id":"https://openalex.org/C151799858","wikidata":"https://www.wikidata.org/wiki/Q587008","display_name":"Switched-mode power supply","level":3,"score":0.2133723795413971},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14740130305290222},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/prime.2018.8430368","is_oa":false,"landing_page_url":"https://doi.org/10.1109/prime.2018.8430368","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 14th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8799999952316284,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":16,"referenced_works":["https://openalex.org/W1982288276","https://openalex.org/W1984863066","https://openalex.org/W2023284567","https://openalex.org/W2048469329","https://openalex.org/W2133201500","https://openalex.org/W2147891076","https://openalex.org/W2148392146","https://openalex.org/W2171702041","https://openalex.org/W2346142427","https://openalex.org/W2540449581","https://openalex.org/W2558013876","https://openalex.org/W2735241581","https://openalex.org/W2759418578","https://openalex.org/W3021238137","https://openalex.org/W3147289055","https://openalex.org/W4231501498"],"related_works":["https://openalex.org/W3004564537","https://openalex.org/W2393887177","https://openalex.org/W2354567683","https://openalex.org/W2544323617","https://openalex.org/W2091010831","https://openalex.org/W2384491229","https://openalex.org/W2370976371","https://openalex.org/W1970992322","https://openalex.org/W2359862740","https://openalex.org/W2351074943"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,9,24,37,45,51,65,100,115],"voltage":[4,95,112],"reference":[5,94,113],"circuit":[6,66,90],"operational":[7],"from":[8,99],"0.5":[10,101],"V":[11,102],"supply":[12,58,117],"which":[13,67],"is":[14,30,34,80,107],"based":[15],"on":[16,71],"the":[17,72,111],"zero-temperature":[18],"coefficient":[19,106],"(ZTC)":[20],"operating":[21],"point":[22,43],"of":[23,74,96,121],"MOS":[25],"transistor.":[26],"The":[27,104],"ZTC":[28,42],"condition":[29],"reviewed":[31],"and":[32,110],"it":[33],"found":[35],"that":[36,88],"MOSFET":[38],"biased":[39],"below":[40],"its":[41],"with":[44],"PTAT":[46],"current":[47],"source":[48],"can":[49],"yield":[50],"temperature":[52,105],"stable":[53],"output":[54],"at":[55,124],"this":[56,61,89],"low":[57],"voltage.":[59],"With":[60],"idea":[62],"in":[63,82],"mind,":[64],"does":[68],"not":[69],"rely":[70],"availability":[73],"special":[75],"devices":[76],"like":[77],"Shottky":[78],"diodes":[79],"designed":[81],"130":[83],"nm":[84],"CMOS.":[85],"Simulations":[86],"show":[87],"generates":[91],"an":[92],"average":[93],"318":[97],"mV":[98],"supply.":[103],"154":[108],"ppm/K":[109],"has":[114],"power":[116],"rejection":[118],"ratio":[119],"(PSRR)":[120],"41":[122],"dB":[123],"DC.":[125]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}