{"id":"https://openalex.org/W2182117656","doi":"https://doi.org/10.1109/patmos.2015.7347590","title":"Dynamic current reduction of CMOS digital circuits through design and process optimization","display_name":"Dynamic current reduction of CMOS digital circuits through design and process optimization","publication_year":2015,"publication_date":"2015-09-01","ids":{"openalex":"https://openalex.org/W2182117656","doi":"https://doi.org/10.1109/patmos.2015.7347590","mag":"2182117656"},"language":"en","primary_location":{"id":"doi:10.1109/patmos.2015.7347590","is_oa":false,"landing_page_url":"https://doi.org/10.1109/patmos.2015.7347590","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 25th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067412268","display_name":"Jordan Innocenti","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I21491767","display_name":"Aix-Marseille Universit\u00e9","ror":"https://ror.org/035xkbk20","country_code":"FR","type":"education","lineage":["https://openalex.org/I21491767"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. Innocenti","raw_affiliation_strings":["EpOC/Nice Sophia-Antipolis University, Biot, France","IM2NP-UMR CNRS 7334 / Aix-Marseille University, Marseille, France","STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EpOC/Nice Sophia-Antipolis University, Biot, France","institution_ids":[]},{"raw_affiliation_string":"IM2NP-UMR CNRS 7334 / Aix-Marseille University, Marseille, France","institution_ids":["https://openalex.org/I4210112016","https://openalex.org/I1294671590","https://openalex.org/I21491767"]},{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065865272","display_name":"Loic Welter","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I21491767","display_name":"Aix-Marseille Universit\u00e9","ror":"https://ror.org/035xkbk20","country_code":"FR","type":"education","lineage":["https://openalex.org/I21491767"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"L. Welter","raw_affiliation_strings":["IM2NP-UMR CNRS 7334 / Aix-Marseille University, Marseille, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IM2NP-UMR CNRS 7334 / Aix-Marseille University, Marseille, France","institution_ids":["https://openalex.org/I4210112016","https://openalex.org/I1294671590","https://openalex.org/I21491767"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011439955","display_name":"Nicolas Borrel","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I21491767","display_name":"Aix-Marseille Universit\u00e9","ror":"https://ror.org/035xkbk20","country_code":"FR","type":"education","lineage":["https://openalex.org/I21491767"]},{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"N. Borrel","raw_affiliation_strings":["IM2NP-UMR CNRS 7334 / Aix-Marseille University, Marseille, France","STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IM2NP-UMR CNRS 7334 / Aix-Marseille University, Marseille, France","institution_ids":["https://openalex.org/I4210112016","https://openalex.org/I1294671590","https://openalex.org/I21491767"]},{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056565585","display_name":"F. H. Julien","orcid":"https://orcid.org/0000-0003-4308-6361"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"F. Julien","raw_affiliation_strings":["STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111841559","display_name":"J.M. Portal","orcid":null},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"government","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I21491767","display_name":"Aix-Marseille Universit\u00e9","ror":"https://ror.org/035xkbk20","country_code":"FR","type":"education","lineage":["https://openalex.org/I21491767"]},{"id":"https://openalex.org/I4210112016","display_name":"Institut des Mat\u00e9riaux, de Micro\u00e9lectronique et des Nanosciences de Provence","ror":"https://ror.org/0238zyh04","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I143002897","https://openalex.org/I21491767","https://openalex.org/I3132279224","https://openalex.org/I4210098836","https://openalex.org/I4210112016"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J.M. Portal","raw_affiliation_strings":["IM2NP-UMR CNRS 7334 / Aix-Marseille University, Marseille, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IM2NP-UMR CNRS 7334 / Aix-Marseille University, Marseille, France","institution_ids":["https://openalex.org/I4210112016","https://openalex.org/I1294671590","https://openalex.org/I21491767"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037883051","display_name":"J. Sonzogni","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. Sonzogni","raw_affiliation_strings":["STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090772960","display_name":"L. L\u00f3pez","orcid":"https://orcid.org/0000-0001-9586-2241"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"L. Lopez","raw_affiliation_strings":["STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060736866","display_name":"Pascal Le Masson","orcid":"https://orcid.org/0000-0002-3835-2875"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Masson","raw_affiliation_strings":["STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5069894082","display_name":"S. Niel","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Niel","raw_affiliation_strings":["STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018537552","display_name":"P. Dreux","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"P. Dreux","raw_affiliation_strings":["STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5080545817","display_name":"J. Castellan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"J. Castellan","raw_affiliation_strings":["STMicroelectronics, Rousset, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Rousset, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":11,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.08229756,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"28","issue":null,"first_page":"77","last_page":"81"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.8697727918624878},{"id":"https://openalex.org/keywords/nmos-logic","display_name":"NMOS logic","score":0.8522687554359436},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7575024366378784},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6537849307060242},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.6032171249389648},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5738197565078735},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5370508432388306},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44996944069862366},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4454386234283447},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.43373388051986694},{"id":"https://openalex.org/keywords/process-variation","display_name":"Process variation","score":0.42384129762649536},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.260397732257843}],"concepts":[{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.8697727918624878},{"id":"https://openalex.org/C197162436","wikidata":"https://www.wikidata.org/wiki/Q83908","display_name":"NMOS logic","level":4,"score":0.8522687554359436},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7575024366378784},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6537849307060242},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.6032171249389648},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5738197565078735},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5370508432388306},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44996944069862366},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4454386234283447},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.43373388051986694},{"id":"https://openalex.org/C93389723","wikidata":"https://www.wikidata.org/wiki/Q7247313","display_name":"Process variation","level":3,"score":0.42384129762649536},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.260397732257843}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/patmos.2015.7347590","is_oa":false,"landing_page_url":"https://doi.org/10.1109/patmos.2015.7347590","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 25th International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1566902365","https://openalex.org/W1582019256","https://openalex.org/W1592106191","https://openalex.org/W1593615855","https://openalex.org/W2106224022","https://openalex.org/W2131862714","https://openalex.org/W2154869256","https://openalex.org/W2325752595","https://openalex.org/W2535700087","https://openalex.org/W2547961720","https://openalex.org/W4212848293","https://openalex.org/W6633777348"],"related_works":["https://openalex.org/W4386261925","https://openalex.org/W2082944690","https://openalex.org/W2263373136","https://openalex.org/W1914349328","https://openalex.org/W2730314563","https://openalex.org/W2058541779","https://openalex.org/W1742453416","https://openalex.org/W2085719533","https://openalex.org/W2048420745","https://openalex.org/W2745127909"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"an":[3],"original":[4],"solution":[5],"to":[6,43],"decrease":[7,101],"significantly":[8],"the":[9,21,29,109,113],"power":[10],"consumption":[11],"of":[12,32,49,62,112],"CMOS":[13,78],"digital":[14],"circuits.":[15],"The":[16],"supply":[17],"voltage":[18],"VDD":[19],"and":[20,26,90,94,121],"MOSFET":[22],"width":[23],"are":[24],"reduced":[25,116],"allow":[27],"lowering":[28],"dynamic":[30,102],"current":[31,85,103,111],"circuits":[33],"by":[34,88,117],"25%.":[35],"A":[36],"CAD-to-mask":[37],"script":[38],"was":[39,65],"developed":[40],"in":[41,53],"order":[42],"automatically":[44],"reduce":[45],"all":[46],"physical":[47],"widths":[48],"low-voltage":[50],"transistors":[51],"used":[52],"standard":[54,63],"cells.":[55],"With":[56],"this":[57],"operation,":[58],"no":[59],"additional":[60],"redesign":[61],"cells":[64],"necessary.":[66],"Moreover,":[67],"a":[68],"new":[69],"optimized":[70],"process":[71,122],"based":[72],"on":[73],"e-NVM":[74],"(embedded":[75],"Non-Volatile":[76],"Memory)":[77],"80":[79],"nm":[80],"technology":[81],"is":[82,86,115],"developed.":[83],"ION":[84],"improved":[87],"15%":[89],"50%":[91],"for":[92],"NMOS":[93],"PMOS":[95],"transistors,":[96],"respectively.":[97],"This,":[98],"let":[99],"us":[100],"without":[104],"impacting":[105],"circuit":[106,114],"performance.":[107],"Finally,":[108],"static":[110],"60%":[118],"through":[119],"design":[120],"optimization.":[123]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}