{"id":"https://openalex.org/W3006594623","doi":"https://doi.org/10.1109/nvmts47818.2019.8986219","title":"Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method","display_name":"Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method","publication_year":2019,"publication_date":"2019-10-01","ids":{"openalex":"https://openalex.org/W3006594623","doi":"https://doi.org/10.1109/nvmts47818.2019.8986219","mag":"3006594623"},"language":"en","primary_location":{"id":"doi:10.1109/nvmts47818.2019.8986219","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nvmts47818.2019.8986219","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 19th Non-Volatile Memory Technology Symposium (NVMTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5019484065","display_name":"Fei Mo","orcid":"https://orcid.org/0000-0002-5848-4912"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]},{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Fei Mo","raw_affiliation_strings":["The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505","Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba Meguro-Ku, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505","institution_ids":["https://openalex.org/I74801974","https://openalex.org/I114531698"]},{"raw_affiliation_string":"Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba Meguro-Ku, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5012827328","display_name":"Yusaku Tagawa","orcid":"https://orcid.org/0000-0002-4516-3247"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Yusaku Tagawa","raw_affiliation_strings":["The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku,Department of Electrical Engineering and Information Systems,Tokyo,Japan,113-8654","Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku,Department of Electrical Engineering and Information Systems,Tokyo,Japan,113-8654","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-Ku, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036826888","display_name":"Takuya Saraya","orcid":"https://orcid.org/0000-0002-3796-7747"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]},{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Takuya Saraya","raw_affiliation_strings":["The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505","Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba Meguro-Ku, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505","institution_ids":["https://openalex.org/I74801974","https://openalex.org/I114531698"]},{"raw_affiliation_string":"Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba Meguro-Ku, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091874162","display_name":"Toshiro Hiramoto","orcid":"https://orcid.org/0000-0001-9469-2631"},"institutions":[{"id":"https://openalex.org/I114531698","display_name":"Tokyo Institute of Technology","ror":"https://ror.org/0112mx960","country_code":"JP","type":"education","lineage":["https://openalex.org/I114531698"]},{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Toshiro Hiramoto","raw_affiliation_strings":["The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505","Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba Meguro-Ku, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"The University of Tokyo, 4-6-1 Komaba Meguro-Ku,Institute of Industrial Science,Tokyo,Japan,153-8505","institution_ids":["https://openalex.org/I74801974","https://openalex.org/I114531698"]},{"raw_affiliation_string":"Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba Meguro-Ku, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5071031997","display_name":"Masaharu Kobayashi","orcid":"https://orcid.org/0000-0002-7945-6136"},"institutions":[{"id":"https://openalex.org/I74801974","display_name":"The University of Tokyo","ror":"https://ror.org/057zh3y96","country_code":"JP","type":"education","lineage":["https://openalex.org/I74801974"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Masaharu Kobayashi","raw_affiliation_strings":["The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku,VLSI Design &#x0026; Education Center,Tokyo,Japan,113-8656","VLSI Design & Education Center, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku,VLSI Design &#x0026; Education Center,Tokyo,Japan,113-8656","institution_ids":["https://openalex.org/I74801974"]},{"raw_affiliation_string":"VLSI Design & Education Center, The University of Tokyo, Yayoi 2-11-16, Bunkyo-ku, Tokyo, Japan","institution_ids":["https://openalex.org/I74801974"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5019484065"],"corresponding_institution_ids":["https://openalex.org/I114531698","https://openalex.org/I74801974"],"apc_list":null,"apc_paid":null,"fwci":1.1923,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.80226703,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":99},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.7087063789367676},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.6470719575881958},{"id":"https://openalex.org/keywords/work-function","display_name":"Work function","score":0.5515432953834534},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5446386933326721},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.4880560636520386},{"id":"https://openalex.org/keywords/tunnel-junction","display_name":"Tunnel junction","score":0.46305418014526367},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.44390761852264404},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4403035640716553},{"id":"https://openalex.org/keywords/scalability","display_name":"Scalability","score":0.4131658971309662},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.3752589821815491},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3708978295326233},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.3437628746032715},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3076021373271942},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.16286000609397888},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.07339748740196228}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.7087063789367676},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.6470719575881958},{"id":"https://openalex.org/C115235246","wikidata":"https://www.wikidata.org/wiki/Q783800","display_name":"Work function","level":3,"score":0.5515432953834534},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5446386933326721},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.4880560636520386},{"id":"https://openalex.org/C83408046","wikidata":"https://www.wikidata.org/wiki/Q3183536","display_name":"Tunnel junction","level":3,"score":0.46305418014526367},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.44390761852264404},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4403035640716553},{"id":"https://openalex.org/C48044578","wikidata":"https://www.wikidata.org/wiki/Q727490","display_name":"Scalability","level":2,"score":0.4131658971309662},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.3752589821815491},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3708978295326233},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3437628746032715},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3076021373271942},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.16286000609397888},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.07339748740196228},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C77088390","wikidata":"https://www.wikidata.org/wiki/Q8513","display_name":"Database","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nvmts47818.2019.8986219","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nvmts47818.2019.8986219","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 19th Non-Volatile Memory Technology Symposium (NVMTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W656433898","https://openalex.org/W1661368752","https://openalex.org/W2005135813","https://openalex.org/W2007978852","https://openalex.org/W2519922629","https://openalex.org/W2526086769","https://openalex.org/W2584072794","https://openalex.org/W2786531769","https://openalex.org/W2790638810","https://openalex.org/W2903916166","https://openalex.org/W2912070010","https://openalex.org/W3101727876"],"related_works":["https://openalex.org/W2080732334","https://openalex.org/W2138315929","https://openalex.org/W2022784881","https://openalex.org/W2035029607","https://openalex.org/W2036291869","https://openalex.org/W2359278379","https://openalex.org/W1966942500","https://openalex.org/W2539975300","https://openalex.org/W2124838770","https://openalex.org/W2088885162"],"abstract_inverted_index":{"We":[0],"have":[1],"developed":[2],"a":[3,67,129],"numerical":[4],"simulation":[5],"framework":[6],"for":[7,117,131],"HfO":[8],"<sub":[9],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[10],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[11],"based":[12],"Ferroelectric":[13],"Tunnel":[14],"Junction":[15],"(FTJ)":[16],"memory":[17],"using":[18],"Non-Equilibrium":[19],"Green":[20],"Function":[21],"(NEGF)":[22],"and":[23,36,93,121],"self-consistent":[24],"potential":[25,130],"method":[26],"which":[27],"is":[28,44],"calibrated":[29],"by":[30,100],"our":[31],"experimental":[32],"FTJ":[33,43,61,65,113,127],"results.":[34],"Scalability":[35],"design":[37],"guideline":[38,108],"of":[39,54,58,103,109],"Metal-Ferroelectric-Insulator-Semiconductor":[40],"(MFIS)":[41],"structure":[42,60,64,76,88,112],"investigated":[45],"in":[46],"this":[47],"work.":[48],"Due":[49],"to":[50,134],"the":[51,82],"large":[52],"asymmetry":[53],"dielectric":[55],"screening":[56],"length":[57],"MFIS":[59,63,111,125],"electrodes,":[62],"shows":[66,128],"higher":[68],"tunneling":[69],"electroresistance":[70],"(TER)":[71],"ratio":[72,96],"than":[73],"Metal-Ferroelectric-Insulator-Metal":[74],"(MFIM)":[75],"FTJ,":[77],"while":[78],"it":[79],"has":[80,114],"almost":[81],"same":[83],"read":[84,91,119],"current":[85,92,120],"as":[86],"MFIM":[87],"FTJ.":[89],"High":[90],"high":[94,118,122],"TER":[95,123],"can":[97],"be":[98],"obtained":[99],"adjusting":[101],"property":[102],"semiconductor":[104],"bottom":[105],"electrodes.":[106],"A":[107],"designing":[110],"been":[115],"proposed":[116],"ratio.":[124],"type":[126],"scaling":[132],"down":[133],"sub-20":[135],"nm":[136],"diameter.":[137]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":7},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}