{"id":"https://openalex.org/W2909760123","doi":"https://doi.org/10.1109/nvmts.2018.8603105","title":"Improvement of Endurance and Data-retention in 40nm TaO&lt;inf&gt;X&lt;/inf&gt;-based ReRAM by Finalize Verify","display_name":"Improvement of Endurance and Data-retention in 40nm TaO&lt;inf&gt;X&lt;/inf&gt;-based ReRAM by Finalize Verify","publication_year":2018,"publication_date":"2018-10-01","ids":{"openalex":"https://openalex.org/W2909760123","doi":"https://doi.org/10.1109/nvmts.2018.8603105","mag":"2909760123"},"language":"en","primary_location":{"id":"doi:10.1109/nvmts.2018.8603105","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nvmts.2018.8603105","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 Non-Volatile Memory Technology Symposium (NVMTS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109365595","display_name":"Shouhei Fukuyama","orcid":null},"institutions":[{"id":"https://openalex.org/I96679780","display_name":"Chuo University","ror":"https://ror.org/03qvqb743","country_code":"JP","type":"education","lineage":["https://openalex.org/I96679780"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Shouhei Fukuyama","raw_affiliation_strings":["Department of Electrical, Electronic and Communication Engineering, Chuo University, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Department of Electrical, Electronic and Communication Engineering, Chuo University, Tokyo, Japan","institution_ids":["https://openalex.org/I96679780"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014697841","display_name":"Shinpei Matsuda","orcid":null},"institutions":[{"id":"https://openalex.org/I96679780","display_name":"Chuo University","ror":"https://ror.org/03qvqb743","country_code":"JP","type":"education","lineage":["https://openalex.org/I96679780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Shinpei Matsuda","raw_affiliation_strings":["Research and Development Initiative, Chuo University, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Research and Development Initiative, Chuo University, Tokyo, Japan","institution_ids":["https://openalex.org/I96679780"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112095025","display_name":"Ryutaro Yasuhara","orcid":null},"institutions":[{"id":"https://openalex.org/I1283155146","display_name":"Panasonic (Japan)","ror":"https://ror.org/011tm7n37","country_code":"JP","type":"company","lineage":["https://openalex.org/I1283155146"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryutaro Yasuhara","raw_affiliation_strings":["Panasonic Semiconductor Solutions Co.,Ltd., 1 Kotari-yakemachi Nagaokakyo, Kyoto, japan"],"affiliations":[{"raw_affiliation_string":"Panasonic Semiconductor Solutions Co.,Ltd., 1 Kotari-yakemachi Nagaokakyo, Kyoto, japan","institution_ids":["https://openalex.org/I1283155146"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5032914719","display_name":"Ken Takeuchi","orcid":"https://orcid.org/0000-0002-9345-6503"},"institutions":[{"id":"https://openalex.org/I96679780","display_name":"Chuo University","ror":"https://ror.org/03qvqb743","country_code":"JP","type":"education","lineage":["https://openalex.org/I96679780"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ken Takeuchi","raw_affiliation_strings":["Research and Development Initiative, Chuo University, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Research and Development Initiative, Chuo University, Tokyo, Japan","institution_ids":["https://openalex.org/I96679780"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5109365595"],"corresponding_institution_ids":["https://openalex.org/I96679780"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.15764522,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11601","display_name":"Neuroscience and Neural Engineering","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2804","display_name":"Cellular and Molecular Neuroscience"},"field":{"id":"https://openalex.org/fields/28","display_name":"Neuroscience"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.7948437929153442},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.7053067088127136},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.44401922821998596},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40134498476982117},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3730515241622925},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.31010323762893677},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19392067193984985}],"concepts":[{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7948437929153442},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.7053067088127136},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.44401922821998596},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40134498476982117},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3730515241622925},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.31010323762893677},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19392067193984985},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nvmts.2018.8603105","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nvmts.2018.8603105","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2018 Non-Volatile Memory Technology Symposium (NVMTS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1547841088","https://openalex.org/W2007300900","https://openalex.org/W2178102281","https://openalex.org/W2221855158","https://openalex.org/W2460430688","https://openalex.org/W2620767935","https://openalex.org/W2624507888","https://openalex.org/W2801267388","https://openalex.org/W3140396777","https://openalex.org/W6632698936"],"related_works":["https://openalex.org/W2104937488","https://openalex.org/W2909760123","https://openalex.org/W3088669828","https://openalex.org/W2086074825","https://openalex.org/W2964871028","https://openalex.org/W2896073877","https://openalex.org/W1549725729","https://openalex.org/W2185474626","https://openalex.org/W4396949738","https://openalex.org/W3040151040"],"abstract_inverted_index":{"This":[0],"paper":[1],"investigates":[2],"Set/Reset":[3,38,42,85],"endurance":[4],"cycles":[5,43],"utilizing":[6],"Verify":[7,30,46,100],"operation":[8,31,47,101,104],"in":[9,99],"order":[10],"to":[11,90],"extend":[12],"the":[13,74,83],"acceptable":[14],"data-retention":[15,33,75],"time":[16,34,76],"of":[17,55,77,96],"40nm":[18],"TaO":[19],"<sub":[20],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[21],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">X</sub>":[22],"based":[23],"Resistive":[24],"Random":[25],"Access":[26],"Memory":[27],"(ReRAM).":[28],"Applying":[29],"enhances":[32],"drastically":[35],"at":[36,82],"low":[37,56],"cycles.":[39,86],"However,":[40],"as":[41],"with":[44],"applying":[45],"increase,":[48],"ReRAM-cell":[49],"deteriorates":[50],"and":[51,102],"bit-error":[52],"rate":[53],"(BER)":[54],"resistance":[57],"state":[58],"(LRS)":[59],"increases":[60],"[1].":[61],"To":[62],"suppress":[63],"this":[64],"deterioration":[65],"by":[66],"Verify-stress,":[67],"\u201cFinalize_Verify\u201d":[68],"is":[69,79,105],"proposed.":[70],"As":[71],"a":[72],"result,":[73],"LRS":[78],"enhanced":[80],"even":[81],"high":[84],"In":[87],"addition,":[88],"assuming":[89],"using":[91],"error-correcting":[92],"code":[93],"(ECC),":[94],"effect":[95],"ECC":[97],"strength":[98],"Finalize_Verify":[103],"investigated.":[106]},"counts_by_year":[{"year":2023,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}