{"id":"https://openalex.org/W1918159156","doi":"https://doi.org/10.1109/nvmsa.2015.7304372","title":"Read disturbance issue for nanoscale STT-MRAM","display_name":"Read disturbance issue for nanoscale STT-MRAM","publication_year":2015,"publication_date":"2015-08-01","ids":{"openalex":"https://openalex.org/W1918159156","doi":"https://doi.org/10.1109/nvmsa.2015.7304372","mag":"1918159156"},"language":"en","primary_location":{"id":"doi:10.1109/nvmsa.2015.7304372","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nvmsa.2015.7304372","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE Non-Volatile Memory System and Applications Symposium (NVMSA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101773796","display_name":"Ran Yi","orcid":"https://orcid.org/0000-0002-2512-1066"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yi Ran","raw_affiliation_strings":["Spintronics Interdisciplinary Center Beihang University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Spintronics Interdisciplinary Center Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100381646","display_name":"Wang Kang","orcid":"https://orcid.org/0000-0002-3169-6034"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wang Kang","raw_affiliation_strings":["Spintronics Interdisciplinary Center Beihang University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Spintronics Interdisciplinary Center Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018693228","display_name":"Youguang Zhang","orcid":"https://orcid.org/0009-0008-0928-4210"},"institutions":[{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Youguang Zhang","raw_affiliation_strings":["Spintronics Interdisciplinary Center Beihang University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Spintronics Interdisciplinary Center Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102978184","display_name":"Jacques\u2010Olivier Klein","orcid":"https://orcid.org/0000-0002-6923-5276"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Jacques-Olivier Klein","raw_affiliation_strings":["Institut d'Electronique Fondamentale (IEF) Univ. Paris-Sud, CNRS Orsayz, France"],"affiliations":[{"raw_affiliation_string":"Institut d'Electronique Fondamentale (IEF) Univ. Paris-Sud, CNRS Orsayz, France","institution_ids":["https://openalex.org/I102197404","https://openalex.org/I1294671590"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5066473925","display_name":"Weisheng Zhao","orcid":"https://orcid.org/0000-0001-8088-0404"},"institutions":[{"id":"https://openalex.org/I1294671590","display_name":"Centre National de la Recherche Scientifique","ror":"https://ror.org/02feahw73","country_code":"FR","type":"funder","lineage":["https://openalex.org/I1294671590"]},{"id":"https://openalex.org/I102197404","display_name":"Universit\u00e9 Paris-Sud","ror":"https://ror.org/028rypz17","country_code":"FR","type":"education","lineage":["https://openalex.org/I102197404"]},{"id":"https://openalex.org/I82880672","display_name":"Beihang University","ror":"https://ror.org/00wk2mp56","country_code":"CN","type":"education","lineage":["https://openalex.org/I82880672"]}],"countries":["CN","FR"],"is_corresponding":false,"raw_author_name":"Weisheng Zhao","raw_affiliation_strings":["Institut d'Electronique Fondamentale (IEF) Univ. Paris-Sud, CNRS Orsayz, France","Spintronics Interdisciplinary Center Beihang University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"Institut d'Electronique Fondamentale (IEF) Univ. Paris-Sud, CNRS Orsayz, France","institution_ids":["https://openalex.org/I102197404","https://openalex.org/I1294671590"]},{"raw_affiliation_string":"Spintronics Interdisciplinary Center Beihang University, Beijing, China","institution_ids":["https://openalex.org/I82880672"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5101773796"],"corresponding_institution_ids":["https://openalex.org/I82880672"],"apc_list":null,"apc_paid":null,"fwci":1.3016,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.80300426,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"294","issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10049","display_name":"Magnetic properties of thin films","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9987999796867371,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.8656065464019775},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.7155264616012573},{"id":"https://openalex.org/keywords/disturbance","display_name":"Disturbance (geology)","score":0.7138714790344238},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.60209059715271},{"id":"https://openalex.org/keywords/spin-transfer-torque","display_name":"Spin-transfer torque","score":0.5764786005020142},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.5556389093399048},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.44616925716400146},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.37656939029693604},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.37338507175445557},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.32980120182037354},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2832564115524292},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11486345529556274},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08890202641487122}],"concepts":[{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.8656065464019775},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.7155264616012573},{"id":"https://openalex.org/C2777601987","wikidata":"https://www.wikidata.org/wiki/Q5283581","display_name":"Disturbance (geology)","level":2,"score":0.7138714790344238},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.60209059715271},{"id":"https://openalex.org/C609986","wikidata":"https://www.wikidata.org/wiki/Q844840","display_name":"Spin-transfer torque","level":4,"score":0.5764786005020142},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.5556389093399048},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.44616925716400146},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.37656939029693604},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.37338507175445557},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.32980120182037354},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2832564115524292},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11486345529556274},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08890202641487122},{"id":"https://openalex.org/C151730666","wikidata":"https://www.wikidata.org/wiki/Q7205","display_name":"Paleontology","level":1,"score":0.0},{"id":"https://openalex.org/C86803240","wikidata":"https://www.wikidata.org/wiki/Q420","display_name":"Biology","level":0,"score":0.0},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.0},{"id":"https://openalex.org/C32546565","wikidata":"https://www.wikidata.org/wiki/Q856711","display_name":"Magnetization","level":3,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nvmsa.2015.7304372","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nvmsa.2015.7304372","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 IEEE Non-Volatile Memory System and Applications Symposium (NVMSA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.5199999809265137}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":23,"referenced_works":["https://openalex.org/W1964504828","https://openalex.org/W1967547265","https://openalex.org/W1969200114","https://openalex.org/W1974831841","https://openalex.org/W1985887979","https://openalex.org/W1988431200","https://openalex.org/W1998525920","https://openalex.org/W2003243790","https://openalex.org/W2016073777","https://openalex.org/W2019833471","https://openalex.org/W2025173691","https://openalex.org/W2028436610","https://openalex.org/W2038170692","https://openalex.org/W2042076387","https://openalex.org/W2048592125","https://openalex.org/W2068034150","https://openalex.org/W2082960646","https://openalex.org/W2089397153","https://openalex.org/W2110134128","https://openalex.org/W2138384063","https://openalex.org/W2325040699","https://openalex.org/W2327150258","https://openalex.org/W2544913214"],"related_works":["https://openalex.org/W4388285079","https://openalex.org/W2546997659","https://openalex.org/W2733919783","https://openalex.org/W2425808153","https://openalex.org/W4281561022","https://openalex.org/W2404332818","https://openalex.org/W2626022094","https://openalex.org/W4235980920","https://openalex.org/W2342993049","https://openalex.org/W4387872710"],"abstract_inverted_index":{"Spin":[0],"transfer":[1],"torque":[2],"magnetic":[3],"random":[4],"access":[5],"memory":[6,23,126,163],"(STT-MRAM)":[7],"has":[8],"been":[9],"widely":[10],"considered":[11],"as":[12],"one":[13],"of":[14,54,124,140],"the":[15,20,62,92,95,110,120,125,151,154,162,176],"most":[16],"promising":[17],"candidates":[18],"for":[19,88],"next-generation":[21],"nonvolatile":[22],"technologies,":[24],"thanks":[25],"to":[26,69,108,174],"its":[27,115],"attractive":[28],"features,":[29,117],"including":[30],"high":[31,33,38],"density,":[32],"speed,":[34],"low":[35],"power":[36],"and":[37,58,79,97],"endurance":[39],"etc.":[40],"However,":[41],"our":[42],"investigation":[43],"demonstrates":[44],"that":[45],"read":[46,57,73,96,111,134,141,147,166,177],"disturbance":[47,74,112,135,142,167,178],"may":[48,80],"become":[49],"a":[50,84,106,130],"big":[51],"reliability":[52,86],"issue":[53,75],"STT-MRAM,":[55],"since":[56],"write":[59,98],"currents":[60,99],"share":[61],"same":[63],"path.":[64],"As":[65],"technology":[66],"scales":[67],"down":[68],"nanoscale":[70],"nodes,":[71],"this":[72,102],"becomes":[76],"more":[77],"serious":[78],"turn":[81],"into":[82,161],"be":[83,158,172],"critical":[85],"barrier":[87],"STT-MRAM":[89],"commercialization,":[90],"because":[91],"difference":[93],"between":[94],"decreases.":[100],"In":[101],"paper,":[103],"we":[104],"propose":[105],"circuit":[107],"detect":[109],"by":[113],"exploiting":[114],"typical":[116],"i.e.,":[118],"(a)":[119],"resistance":[121],"(read":[122],"current)":[123],"cell":[127],"will":[128],"have":[129],"sudden":[131],"change":[132],"if":[133],"occurs;":[136],"(b)":[137],"only":[138],"one-direction":[139],"can":[143,157,171],"occur":[144],"during":[145],"normal":[146],"operations.":[148],"Based":[149],"on":[150],"detection":[152],"results,":[153],"correct":[155,175],"data":[156],"restored":[159],"back":[160],"cells":[164],"after":[165],"or":[168],"system-level":[169],"algorithms":[170],"employed":[173],"fault.":[179]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}