{"id":"https://openalex.org/W1980259227","doi":"https://doi.org/10.1109/nvmsa.2014.6927206","title":"NV-TCAM: Alternative interests and practices in NVM designs","display_name":"NV-TCAM: Alternative interests and practices in NVM designs","publication_year":2014,"publication_date":"2014-08-01","ids":{"openalex":"https://openalex.org/W1980259227","doi":"https://doi.org/10.1109/nvmsa.2014.6927206","mag":"1980259227"},"language":"en","primary_location":{"id":"doi:10.1109/nvmsa.2014.6927206","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nvmsa.2014.6927206","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101884198","display_name":"\u0130smail Bayram","orcid":"https://orcid.org/0000-0002-5065-4497"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Ismail Bayram","raw_affiliation_strings":["Electrical and Computer Engineering Department, University of Pittsburgh, Pittsburgh, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering Department, University of Pittsburgh, Pittsburgh, USA","institution_ids":["https://openalex.org/I170201317"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5058073627","display_name":"Yiran Chen","orcid":"https://orcid.org/0000-0002-1486-8412"},"institutions":[{"id":"https://openalex.org/I170201317","display_name":"University of Pittsburgh","ror":"https://ror.org/01an3r305","country_code":"US","type":"education","lineage":["https://openalex.org/I170201317"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yiran Chen","raw_affiliation_strings":["Electrical and Computer Engineering Department, University of Pittsburgh, Pittsburgh, USA"],"affiliations":[{"raw_affiliation_string":"Electrical and Computer Engineering Department, University of Pittsburgh, Pittsburgh, USA","institution_ids":["https://openalex.org/I170201317"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5101884198"],"corresponding_institution_ids":["https://openalex.org/I170201317"],"apc_list":null,"apc_paid":null,"fwci":0.628,"has_fulltext":false,"cited_by_count":21,"citation_normalized_percentile":{"value":0.71943434,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"6"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/content-addressable-memory","display_name":"Content-addressable memory","score":0.7747691869735718},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.7327468395233154},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.7070875763893127},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6632615923881531},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.6524213552474976},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.5586766600608826},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.5344706177711487},{"id":"https://openalex.org/keywords/microprocessor","display_name":"Microprocessor","score":0.5289801359176636},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5183216333389282},{"id":"https://openalex.org/keywords/ferroelectric-ram","display_name":"Ferroelectric RAM","score":0.4854488968849182},{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.482326477766037},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.4645023047924042},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.4266955256462097},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.42648836970329285},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.4229128360748291},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4149632155895233},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2790074348449707},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.2627226710319519},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.19139498472213745},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14675697684288025},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.138864666223526}],"concepts":[{"id":"https://openalex.org/C53442348","wikidata":"https://www.wikidata.org/wiki/Q745101","display_name":"Content-addressable memory","level":3,"score":0.7747691869735718},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.7327468395233154},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.7070875763893127},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6632615923881531},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.6524213552474976},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.5586766600608826},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.5344706177711487},{"id":"https://openalex.org/C2780728072","wikidata":"https://www.wikidata.org/wiki/Q5297","display_name":"Microprocessor","level":2,"score":0.5289801359176636},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5183216333389282},{"id":"https://openalex.org/C161164327","wikidata":"https://www.wikidata.org/wiki/Q703656","display_name":"Ferroelectric RAM","level":4,"score":0.4854488968849182},{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.482326477766037},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.4645023047924042},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.4266955256462097},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.42648836970329285},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4229128360748291},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4149632155895233},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2790074348449707},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.2627226710319519},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.19139498472213745},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14675697684288025},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.138864666223526},{"id":"https://openalex.org/C119857082","wikidata":"https://www.wikidata.org/wiki/Q2539","display_name":"Machine learning","level":1,"score":0.0},{"id":"https://openalex.org/C50644808","wikidata":"https://www.wikidata.org/wiki/Q192776","display_name":"Artificial neural network","level":2,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nvmsa.2014.6927206","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nvmsa.2014.6927206","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2014 IEEE Non-Volatile Memory Systems and Applications Symposium (NVMSA)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306076","display_name":"National Science Foundation","ror":"https://ror.org/021nxhr62"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":24,"referenced_works":["https://openalex.org/W1597386803","https://openalex.org/W1981342877","https://openalex.org/W1989660200","https://openalex.org/W1998549161","https://openalex.org/W2002226195","https://openalex.org/W2029683116","https://openalex.org/W2050807719","https://openalex.org/W2054290933","https://openalex.org/W2062042175","https://openalex.org/W2062143991","https://openalex.org/W2062258101","https://openalex.org/W2068536868","https://openalex.org/W2074713452","https://openalex.org/W2083980649","https://openalex.org/W2112181056","https://openalex.org/W2130236523","https://openalex.org/W2136199013","https://openalex.org/W2147588089","https://openalex.org/W2162651880","https://openalex.org/W2188761345","https://openalex.org/W4232011172","https://openalex.org/W4238549369","https://openalex.org/W4285719527","https://openalex.org/W6687026183"],"related_works":["https://openalex.org/W2130852067","https://openalex.org/W1966671390","https://openalex.org/W2068579290","https://openalex.org/W3209704453","https://openalex.org/W4285257158","https://openalex.org/W2185519377","https://openalex.org/W2171888576","https://openalex.org/W2505369450","https://openalex.org/W2199137887","https://openalex.org/W1980259227"],"abstract_inverted_index":{"TCAM":[0,29,54,96],"(ternary":[1],"content":[2],"addressable":[3],"memory)":[4],"is":[5,30],"a":[6],"special":[7],"memory":[8,86],"type":[9],"that":[10],"can":[11,101],"compare":[12],"input":[13],"search":[14],"data":[15],"with":[16],"stored":[17],"data,":[18],"and":[19,62,84,114],"return":[20],"location":[21],"(sometime,":[22],"the":[23,71,92],"associated":[24],"content)":[25],"of":[26,46,73,94,108],"matched":[27],"data.":[28],"widely":[31],"used":[32],"in":[33,91],"microprocessor":[34],"designs":[35,55],"as":[36,38],"well":[37],"communication":[39],"chip,":[40],"e.g.,":[41],"IP-routing.":[42],"Following":[43],"technology":[44],"advances":[45],"emerging":[47],"nonvolatile":[48,95],"memories":[49],"(eNVM),":[50],"applying":[51],"eNVM":[52,76],"to":[53,58],"becomes":[56],"attractive":[57],"achieve":[59,102],"high":[60],"density":[61],"low":[63],"standby":[64,104],"power.":[65],"In":[66],"this":[67],"paper,":[68],"we":[69],"examined":[70],"applications":[72],"three":[74],"promising":[75],"technologies,":[77],"i.e.,":[78],"magnetic":[79],"tunneling":[80],"junction":[81],"(MTJ),":[82],"memristor,":[83],"ferroelectric":[85],"field":[87],"effect":[88],"transistor":[89],"(FeMFET),":[90],"design":[93],"cells.":[97],"All":[98],"these":[99],"technologies":[100],"close-to-zero":[103],"power":[105],"though":[106],"each":[107],"them":[109],"has":[110],"very":[111],"different":[112],"pros":[113],"cons.":[115]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":4},{"year":2018,"cited_by_count":3},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}