{"id":"https://openalex.org/W2221753976","doi":"https://doi.org/10.1109/norchip.2015.7364405","title":"Self-biasing high-voltage driver based on standard CMOS with an adapted level shifter for a wide range of supply voltages","display_name":"Self-biasing high-voltage driver based on standard CMOS with an adapted level shifter for a wide range of supply voltages","publication_year":2015,"publication_date":"2015-10-01","ids":{"openalex":"https://openalex.org/W2221753976","doi":"https://doi.org/10.1109/norchip.2015.7364405","mag":"2221753976"},"language":"en","primary_location":{"id":"doi:10.1109/norchip.2015.7364405","is_oa":false,"landing_page_url":"https://doi.org/10.1109/norchip.2015.7364405","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 Nordic Circuits and Systems Conference (NORCAS): NORCHIP &amp; International Symposium on System-on-Chip (SoC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5054537257","display_name":"Sara Pashmineh","orcid":null},"institutions":[{"id":"https://openalex.org/I51783024","display_name":"Brandenburg University of Technology Cottbus-Senftenberg","ror":"https://ror.org/02wxx3e24","country_code":"DE","type":"education","lineage":["https://openalex.org/I51783024"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Sara Pashmineh","raw_affiliation_strings":["Department Microelectronics, Brandenburg University of Technology, Cottbus, Germany"],"affiliations":[{"raw_affiliation_string":"Department Microelectronics, Brandenburg University of Technology, Cottbus, Germany","institution_ids":["https://openalex.org/I51783024"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5071462563","display_name":"Dirk Killat","orcid":null},"institutions":[{"id":"https://openalex.org/I51783024","display_name":"Brandenburg University of Technology Cottbus-Senftenberg","ror":"https://ror.org/02wxx3e24","country_code":"DE","type":"education","lineage":["https://openalex.org/I51783024"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Dirk Killat","raw_affiliation_strings":["Department Microelectronics, Brandenburg University of Technology, Cottbus, Germany"],"affiliations":[{"raw_affiliation_string":"Department Microelectronics, Brandenburg University of Technology, Cottbus, Germany","institution_ids":["https://openalex.org/I51783024"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5054537257"],"corresponding_institution_ids":["https://openalex.org/I51783024"],"apc_list":null,"apc_paid":null,"fwci":0.4004,"has_fulltext":false,"cited_by_count":7,"citation_normalized_percentile":{"value":0.68027453,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7002602219581604},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.696753203868866},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.6810604929924011},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6498850584030151},{"id":"https://openalex.org/keywords/logic-level","display_name":"Logic level","score":0.6098679900169373},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6004414558410645},{"id":"https://openalex.org/keywords/overvoltage","display_name":"Overvoltage","score":0.5330352187156677},{"id":"https://openalex.org/keywords/cascode","display_name":"Cascode","score":0.5073851943016052},{"id":"https://openalex.org/keywords/overdrive-voltage","display_name":"Overdrive voltage","score":0.4913157522678375},{"id":"https://openalex.org/keywords/low-voltage","display_name":"Low voltage","score":0.48712635040283203},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4862269461154938},{"id":"https://openalex.org/keywords/voltage-reference","display_name":"Voltage reference","score":0.4650719165802002},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.44326385855674744},{"id":"https://openalex.org/keywords/dropout-voltage","display_name":"Dropout voltage","score":0.4383392930030823},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.4340440034866333},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.3955356478691101},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.35895347595214844},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3546111583709717},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3440316319465637}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7002602219581604},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.696753203868866},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.6810604929924011},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6498850584030151},{"id":"https://openalex.org/C146569638","wikidata":"https://www.wikidata.org/wiki/Q173378","display_name":"Logic level","level":3,"score":0.6098679900169373},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6004414558410645},{"id":"https://openalex.org/C15703209","wikidata":"https://www.wikidata.org/wiki/Q333883","display_name":"Overvoltage","level":3,"score":0.5330352187156677},{"id":"https://openalex.org/C2775946640","wikidata":"https://www.wikidata.org/wiki/Q1735017","display_name":"Cascode","level":4,"score":0.5073851943016052},{"id":"https://openalex.org/C195905723","wikidata":"https://www.wikidata.org/wiki/Q7113634","display_name":"Overdrive voltage","level":5,"score":0.4913157522678375},{"id":"https://openalex.org/C128624480","wikidata":"https://www.wikidata.org/wiki/Q1504817","display_name":"Low voltage","level":3,"score":0.48712635040283203},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4862269461154938},{"id":"https://openalex.org/C44351266","wikidata":"https://www.wikidata.org/wiki/Q1465532","display_name":"Voltage reference","level":3,"score":0.4650719165802002},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.44326385855674744},{"id":"https://openalex.org/C15032970","wikidata":"https://www.wikidata.org/wiki/Q851210","display_name":"Dropout voltage","level":4,"score":0.4383392930030823},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.4340440034866333},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.3955356478691101},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.35895347595214844},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3546111583709717},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3440316319465637},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/norchip.2015.7364405","is_oa":false,"landing_page_url":"https://doi.org/10.1109/norchip.2015.7364405","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 Nordic Circuits and Systems Conference (NORCAS): NORCHIP &amp; International Symposium on System-on-Chip (SoC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8299999833106995,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1966885893","https://openalex.org/W1974288530","https://openalex.org/W1974964520","https://openalex.org/W2004878842","https://openalex.org/W2055283523","https://openalex.org/W2112411311","https://openalex.org/W2134763392","https://openalex.org/W2162071877","https://openalex.org/W2169221974","https://openalex.org/W2506696321"],"related_works":["https://openalex.org/W2005534145","https://openalex.org/W4362498785","https://openalex.org/W3157076093","https://openalex.org/W2079017300","https://openalex.org/W2112713080","https://openalex.org/W4220980193","https://openalex.org/W2087168948","https://openalex.org/W2221753976","https://openalex.org/W2980798689","https://openalex.org/W2389316588"],"abstract_inverted_index":{"This":[0,81],"paper":[1],"presents":[2],"the":[3,44,48,66,129],"design":[4],"of":[5,32,47,102,131],"a":[6,29,98],"high-voltage":[7],"driver":[8,64],"based":[9],"on":[10],"stacked":[11,45],"standard":[12],"low-voltage":[13],"CMOS":[14],"with":[15,28],"an":[16],"adapted":[17],"level":[18,67,93],"shifter.":[19],"Both":[20],"circuits":[21],"are":[22,50,61,69],"designed":[23],"in":[24],"65-nm":[25],"TSMC":[26],"technology":[27],"nominal":[30],"voltage":[31,100],"2.5":[33],"V":[34,77,104,107],"without":[35],"any":[36],"passive":[37],"elements.":[38],"The":[39,63,111],"control":[40],"voltages":[41,60,74],"to":[42,78],"regulate":[43],"transistors":[46],"HV-driver":[49],"achieved":[51],"by":[52,85],"proposing":[53],"cascode":[54],"self-biasing":[55],"method,":[56],"therefore":[57],"no":[58,126],"reference":[59],"required.":[62],"and":[65,92,108,120,124],"shifter":[68],"optimized":[70],"for":[71,97,115],"arbitrary":[72],"supply":[73,99],"from":[75],"3.5":[76],"7.5":[79,109],"V.":[80,110],"range":[82,101],"is":[83,113],"extended":[84],"66.7%":[86],"when":[87],"compared":[88],"against":[89],"common":[90],"drivers":[91],"shifters":[94],"being":[95],"suitable":[96],"2.4":[103],"between":[105,117,128],"5.1":[106],"circuit":[112],"stable":[114],"temperatures":[116],"-45":[118],"\u00b0C":[119,122],"125":[121],",":[123],"has":[125],"overvoltage":[127],"terminals":[130],"each":[132],"transistor.":[133]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}
