{"id":"https://openalex.org/W2744542079","doi":"https://doi.org/10.1109/newcas.2017.8010161","title":"A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy","display_name":"A 60 GHz wideband Variable Gain Amplifier in 130nm SiGe BiCMOS for dielectric spectroscopy","publication_year":2017,"publication_date":"2017-06-01","ids":{"openalex":"https://openalex.org/W2744542079","doi":"https://doi.org/10.1109/newcas.2017.8010161","mag":"2744542079"},"language":"en","primary_location":{"id":"doi:10.1109/newcas.2017.8010161","is_oa":false,"landing_page_url":"https://doi.org/10.1109/newcas.2017.8010161","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5068195163","display_name":"Rahul K. Yadav","orcid":"https://orcid.org/0000-0002-9722-1218"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Rahul Kumar Yadav","raw_affiliation_strings":["IHP, Frankfurt, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt, Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074241900","display_name":"Farabi Ibne Jamal","orcid":"https://orcid.org/0000-0003-1236-2968"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Farabi Ibne Jamal","raw_affiliation_strings":["Leibniz-Institut fur innovative Mikroelektronik, Frankfurt an der Oder, Brandenburg, DE"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Leibniz-Institut fur innovative Mikroelektronik, Frankfurt an der Oder, Brandenburg, DE","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5037911538","display_name":"Mohamed Hussein Eissa","orcid":"https://orcid.org/0000-0001-6232-6979"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mohamed Eissa","raw_affiliation_strings":["IHP, Frankfurt, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt, Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073236750","display_name":"Jan Wessel","orcid":"https://orcid.org/0000-0003-3522-447X"},"institutions":[{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jan Wessel","raw_affiliation_strings":["IHP, Frankfurt, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt, Germany","institution_ids":["https://openalex.org/I92894754"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5034303749","display_name":"Dietmar Kissinger","orcid":"https://orcid.org/0000-0002-9698-4432"},"institutions":[{"id":"https://openalex.org/I4577782","display_name":"Technische Universit\u00e4t Berlin","ror":"https://ror.org/03v4gjf40","country_code":"DE","type":"education","lineage":["https://openalex.org/I4577782"]},{"id":"https://openalex.org/I92894754","display_name":"Leibniz Institute for High Performance Microelectronics","ror":"https://ror.org/0489gab80","country_code":"DE","type":"facility","lineage":["https://openalex.org/I315704651","https://openalex.org/I92894754"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Dietmar Kissinger","raw_affiliation_strings":["IHP, Frankfurt, Germany","Technische Universit\u00e4t Berlin, Berlin, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"IHP, Frankfurt, Germany","institution_ids":["https://openalex.org/I92894754"]},{"raw_affiliation_string":"Technische Universit\u00e4t Berlin, Berlin, Germany","institution_ids":["https://openalex.org/I4577782"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.09670145,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":null,"issue":null,"first_page":"285","last_page":"288"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11607","display_name":"Microwave and Dielectric Measurement Techniques","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/video-graphics-array","display_name":"Video Graphics Array","score":0.8636467456817627},{"id":"https://openalex.org/keywords/variable-gain-amplifier","display_name":"Variable-gain amplifier","score":0.8090212345123291},{"id":"https://openalex.org/keywords/wideband","display_name":"Wideband","score":0.6280924677848816},{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.6027336120605469},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.5978087782859802},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5036394000053406},{"id":"https://openalex.org/keywords/silicon-germanium","display_name":"Silicon-germanium","score":0.4103577136993408},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37088626623153687},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.35074424743652344},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3418485224246979},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.33810532093048096},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.31033608317375183},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.25740909576416016},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.22648343443870544},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.17742261290550232},{"id":"https://openalex.org/keywords/operational-amplifier","display_name":"Operational amplifier","score":0.17604133486747742},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.08217278122901917}],"concepts":[{"id":"https://openalex.org/C139983466","wikidata":"https://www.wikidata.org/wiki/Q17194","display_name":"Video Graphics Array","level":3,"score":0.8636467456817627},{"id":"https://openalex.org/C91541141","wikidata":"https://www.wikidata.org/wiki/Q1894933","display_name":"Variable-gain amplifier","level":5,"score":0.8090212345123291},{"id":"https://openalex.org/C2780202535","wikidata":"https://www.wikidata.org/wiki/Q4524457","display_name":"Wideband","level":2,"score":0.6280924677848816},{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.6027336120605469},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.5978087782859802},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5036394000053406},{"id":"https://openalex.org/C2780389399","wikidata":"https://www.wikidata.org/wiki/Q367849","display_name":"Silicon-germanium","level":3,"score":0.4103577136993408},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37088626623153687},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.35074424743652344},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3418485224246979},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.33810532093048096},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.31033608317375183},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.25740909576416016},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.22648343443870544},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17742261290550232},{"id":"https://openalex.org/C145366948","wikidata":"https://www.wikidata.org/wiki/Q178947","display_name":"Operational amplifier","level":4,"score":0.17604133486747742},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.08217278122901917}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/newcas.2017.8010161","is_oa":false,"landing_page_url":"https://doi.org/10.1109/newcas.2017.8010161","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 15th IEEE International New Circuits and Systems Conference (NEWCAS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":7,"referenced_works":["https://openalex.org/W1598164440","https://openalex.org/W2097187238","https://openalex.org/W2116437672","https://openalex.org/W2172082735","https://openalex.org/W2291633578","https://openalex.org/W2317260584","https://openalex.org/W6674352987"],"related_works":["https://openalex.org/W2367353976","https://openalex.org/W2040400730","https://openalex.org/W1970142521","https://openalex.org/W3175678742","https://openalex.org/W2068787209","https://openalex.org/W2012464684","https://openalex.org/W2129507596","https://openalex.org/W4385461831","https://openalex.org/W2039938985","https://openalex.org/W2098478469"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"the":[3],"design,":[4],"implementation,":[5],"layout":[6],"and":[7,74],"measured":[8],"results":[9],"of":[10,48,58,68],"a":[11,45],"single":[12],"stage":[13],"60":[14],"GHz":[15],"Variable":[16],"Gain":[17],"Amplifier":[18],"(VGA).":[19],"The":[20,53],"VGA":[21],"has":[22],"been":[23],"implemented":[24],"in":[25,81],"0.13":[26],"\u00b5m":[27],"SiGe":[28],"BiCMOS":[29],"technology":[30],"with":[31],"f":[32],"<inf":[33,37],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[34,38,72],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">t</inf>":[35],"/f":[36],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">max</inf>":[39],"=":[40],"250/340":[41],"GHz.":[42],"It":[43,64],"provides":[44],"tunable":[46],"gain":[47],"\u221215":[49],"to":[50,78],"7":[51],"dB.":[52],"circuit":[54],"consumes":[55],"32.25":[56],"mW":[57],"power":[59],"from":[60],"2.5":[61],"V":[62],"supply.":[63],"occupies":[65],"an":[66],"area":[67],"0.6":[69],"mm":[70],"<sup":[71],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[73],"it":[75],"is":[76],"intended":[77],"be":[79],"deployed":[80],"miniaturized":[82],"dielectric":[83],"sensing":[84],"applications.":[85]},"counts_by_year":[],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}