{"id":"https://openalex.org/W2020176219","doi":"https://doi.org/10.1109/newcas.2012.6329040","title":"A 3.3 GHz class-E power amplifier with 77% PAE utilising GaN HEMT technology","display_name":"A 3.3 GHz class-E power amplifier with 77% PAE utilising GaN HEMT technology","publication_year":2012,"publication_date":"2012-06-01","ids":{"openalex":"https://openalex.org/W2020176219","doi":"https://doi.org/10.1109/newcas.2012.6329040","mag":"2020176219"},"language":"en","primary_location":{"id":"doi:10.1109/newcas.2012.6329040","is_oa":false,"landing_page_url":"https://doi.org/10.1109/newcas.2012.6329040","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"10th IEEE International NEWCAS Conference","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5004661734","display_name":"Sergej Werner","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Sergej Werner","raw_affiliation_strings":["Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, Aachen, Germany","Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, 52056, Germany"],"affiliations":[{"raw_affiliation_string":"Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, 52056, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006927263","display_name":"Danish Kalim","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Danish Kalim","raw_affiliation_strings":["Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, Aachen, Germany","Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, 52056, Germany"],"affiliations":[{"raw_affiliation_string":"Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, 52056, Germany","institution_ids":["https://openalex.org/I887968799"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110240648","display_name":"Renato Negra","orcid":null},"institutions":[{"id":"https://openalex.org/I887968799","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34","country_code":"DE","type":"education","lineage":["https://openalex.org/I887968799"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Renato Negra","raw_affiliation_strings":["Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, Aachen, Germany","Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, 52056, Germany"],"affiliations":[{"raw_affiliation_string":"Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, Aachen, Germany","institution_ids":["https://openalex.org/I887968799"]},{"raw_affiliation_string":"Mixed-Signal CMOS Circuits, UMIC Research Centre, RWTH Aachen University, 52056, Germany","institution_ids":["https://openalex.org/I887968799"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5004661734"],"corresponding_institution_ids":["https://openalex.org/I887968799"],"apc_list":null,"apc_paid":null,"fwci":0.249,"has_fulltext":false,"cited_by_count":3,"citation_normalized_percentile":{"value":0.59131016,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":null,"issue":null,"first_page":"397","last_page":"400"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11249","display_name":"Wireless Power Transfer Systems","score":0.994700014591217,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.8125506043434143},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7722139358520508},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.6882312893867493},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5451346039772034},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.5406475067138672},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.48613712191581726},{"id":"https://openalex.org/keywords/wireless","display_name":"Wireless","score":0.4681406617164612},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4556137025356293},{"id":"https://openalex.org/keywords/microwave","display_name":"Microwave","score":0.44434767961502075},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.43688082695007324},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.4282623529434204},{"id":"https://openalex.org/keywords/radio-frequency","display_name":"Radio frequency","score":0.41996827721595764},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4169350564479828},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.29841911792755127},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2772113084793091},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2689354419708252},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.23717918992042542},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.23694103956222534},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20066151022911072}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.8125506043434143},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7722139358520508},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.6882312893867493},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5451346039772034},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.5406475067138672},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48613712191581726},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.4681406617164612},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4556137025356293},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.44434767961502075},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.43688082695007324},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.4282623529434204},{"id":"https://openalex.org/C74064498","wikidata":"https://www.wikidata.org/wiki/Q3396184","display_name":"Radio frequency","level":2,"score":0.41996827721595764},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4169350564479828},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.29841911792755127},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2772113084793091},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2689354419708252},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.23717918992042542},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.23694103956222534},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20066151022911072},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/newcas.2012.6329040","is_oa":false,"landing_page_url":"https://doi.org/10.1109/newcas.2012.6329040","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"10th IEEE International NEWCAS Conference","raw_type":"proceedings-article"},{"id":"pmh:oai:publications.rwth-aachen.de:208797","is_oa":false,"landing_page_url":"https://publications.rwth-aachen.de/record/208797","pdf_url":null,"source":{"id":"https://openalex.org/S4306401362","display_name":"RWTH Publications (RWTH Aachen)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I887968799","host_organization_name":"RWTH Aachen University","host_organization_lineage":["https://openalex.org/I887968799"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International : Date 17-20 June 2012 ; [Montral, Canada]<br/>2012 IEEE 10th International, New Circuits and Systems Conference (NEWCAS), Montral, Canada, 2012-06-17 - 2012-06-20","raw_type":"info:eu-repo/semantics/publishedVersion"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8399999737739563,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320324232","display_name":"RWTH Aachen University","ror":"https://ror.org/04xfq0f34"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W69413259","https://openalex.org/W1866214421","https://openalex.org/W1982980918","https://openalex.org/W1989412842","https://openalex.org/W2004512974","https://openalex.org/W2021140672","https://openalex.org/W2107485132","https://openalex.org/W2118179444","https://openalex.org/W2118759056","https://openalex.org/W2128347177","https://openalex.org/W2135780270","https://openalex.org/W2144673626","https://openalex.org/W2159667738","https://openalex.org/W2168062439","https://openalex.org/W2534294669","https://openalex.org/W4229898600","https://openalex.org/W6602834797","https://openalex.org/W6639048136"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W2559825181","https://openalex.org/W4377089489","https://openalex.org/W1975307200","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W4313611767","https://openalex.org/W4385217635","https://openalex.org/W2613044742"],"abstract_inverted_index":{"High":[0],"efficiency":[1,114],"with":[2,100],"high":[3,88],"power":[4,33,112,121],"amplification":[5],"is":[6,48],"of":[7,63,92,106,116,122],"great":[8],"concern":[9],"in":[10,31,50,97],"modern":[11],"wireless":[12],"communication":[13],"systems":[14],"to":[15,36,80,86],"increase":[16],"battery":[17],"life":[18],"and":[19,70,118],"reliability.":[20],"GaN":[21,51],"Heterojunction":[22],"Electron":[23],"Mobility":[24],"Transistors":[25],"(HEMT)":[26],"have":[27],"found":[28],"widespread":[29],"applications":[30],"RF/microwave":[32],"amplifiers":[34],"(PAs)":[35],"fulfill":[37],"these":[38],"requirements.":[39],"In":[40],"this":[41],"paper,":[42],"a":[43,130],"transmission-line":[44],"based":[45],"class-E":[46,84,108],"PA":[47,65,109],"designed":[49],"HEMT":[52],"technology":[53],"at":[54],"3.3":[55],"GHz.":[56],"The":[57],"implemented":[58],"load":[59],"transformation":[60],"network":[61],"(LTN)":[62],"the":[64,67,71,93,101,107],"separates":[66],"DC":[68],"biasing":[69],"second":[72],"harmonic":[73],"termination":[74],"into":[75],"two":[76],"sections":[77],"as":[78],"compared":[79],"conventional":[81],"LTN":[82,95],"for":[83],"PAs":[85],"attain":[87],"efficiency.":[89],"Measured":[90],"impedances":[91],"passive":[94],"are":[96],"good":[98],"agreement":[99],"desired":[102],"values.":[103],"Measurement":[104],"results":[105],"show":[110],"peak":[111,119],"added":[113],"(PAE)":[115],"76.9%":[117],"output":[120],"more":[123],"than":[124],"38.0":[125],"dBm,":[126],"when":[127],"operated":[128],"from":[129],"28V":[131],"supply.":[132]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2014,"cited_by_count":1}],"updated_date":"2026-04-04T16:13:02.066488","created_date":"2025-10-10T00:00:00"}