{"id":"https://openalex.org/W3108010273","doi":"https://doi.org/10.1109/nems50311.2020.9265592","title":"Floating Gate Perimeter Gated Single Photon Avalanche Diodes","display_name":"Floating Gate Perimeter Gated Single Photon Avalanche Diodes","publication_year":2020,"publication_date":"2020-09-27","ids":{"openalex":"https://openalex.org/W3108010273","doi":"https://doi.org/10.1109/nems50311.2020.9265592","mag":"3108010273"},"language":"en","primary_location":{"id":"doi:10.1109/nems50311.2020.9265592","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems50311.2020.9265592","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE 15th International Conference on Nano/Micro Engineered and Molecular System (NEMS)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101409802","display_name":"Mohammad Aminul Haque","orcid":"https://orcid.org/0000-0003-1066-1729"},"institutions":[{"id":"https://openalex.org/I75027704","display_name":"University of Tennessee at Knoxville","ror":"https://ror.org/020f3ap87","country_code":"US","type":"education","lineage":["https://openalex.org/I75027704"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Mohammad Aminul Haque","raw_affiliation_strings":["University of Tennessee, Knoxville, TN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Tennessee, Knoxville, TN, USA","institution_ids":["https://openalex.org/I75027704"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088902578","display_name":"Nicole McFarlane","orcid":"https://orcid.org/0000-0002-3862-8034"},"institutions":[{"id":"https://openalex.org/I75027704","display_name":"University of Tennessee at Knoxville","ror":"https://ror.org/020f3ap87","country_code":"US","type":"education","lineage":["https://openalex.org/I75027704"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Nicole McFarlane","raw_affiliation_strings":["University of Tennessee, Knoxville, TN, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"University of Tennessee, Knoxville, TN, USA","institution_ids":["https://openalex.org/I75027704"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I75027704"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":0,"citation_normalized_percentile":{"value":0.17790179,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"24","issue":null,"first_page":"110","last_page":"114"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12153","display_name":"Advanced Optical Sensing Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3105","display_name":"Instrumentation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12153","display_name":"Advanced Optical Sensing Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3105","display_name":"Instrumentation"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10540","display_name":"Advanced Fluorescence Microscopy Techniques","score":0.9945999979972839,"subfield":{"id":"https://openalex.org/subfields/1304","display_name":"Biophysics"},"field":{"id":"https://openalex.org/fields/13","display_name":"Biochemistry, Genetics and Molecular Biology"},"domain":{"id":"https://openalex.org/domains/1","display_name":"Life Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/avalanche-diode","display_name":"Avalanche diode","score":0.6831724643707275},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6061811447143555},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.594826877117157},{"id":"https://openalex.org/keywords/single-photon-avalanche-diode","display_name":"Single-photon avalanche diode","score":0.5910189747810364},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.5562381148338318},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.5399702787399292},{"id":"https://openalex.org/keywords/avalanche-breakdown","display_name":"Avalanche breakdown","score":0.5262293815612793},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.46218785643577576},{"id":"https://openalex.org/keywords/and-gate","display_name":"AND gate","score":0.45764774084091187},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.43373316526412964},{"id":"https://openalex.org/keywords/zener-diode","display_name":"Zener diode","score":0.4125710725784302},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.38306304812431335},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.35847586393356323},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.2903286814689636},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2774665057659149},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2631363272666931},{"id":"https://openalex.org/keywords/avalanche-photodiode","display_name":"Avalanche photodiode","score":0.17722508311271667},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.16379466652870178},{"id":"https://openalex.org/keywords/detector","display_name":"Detector","score":0.13086754083633423}],"concepts":[{"id":"https://openalex.org/C95341827","wikidata":"https://www.wikidata.org/wiki/Q175898","display_name":"Avalanche diode","level":4,"score":0.6831724643707275},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6061811447143555},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.594826877117157},{"id":"https://openalex.org/C193361668","wikidata":"https://www.wikidata.org/wiki/Q7523761","display_name":"Single-photon avalanche diode","level":4,"score":0.5910189747810364},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.5562381148338318},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.5399702787399292},{"id":"https://openalex.org/C33652038","wikidata":"https://www.wikidata.org/wiki/Q175906","display_name":"Avalanche breakdown","level":4,"score":0.5262293815612793},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.46218785643577576},{"id":"https://openalex.org/C10418432","wikidata":"https://www.wikidata.org/wiki/Q560370","display_name":"AND gate","level":3,"score":0.45764774084091187},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.43373316526412964},{"id":"https://openalex.org/C50566616","wikidata":"https://www.wikidata.org/wiki/Q180586","display_name":"Zener diode","level":4,"score":0.4125710725784302},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.38306304812431335},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.35847586393356323},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.2903286814689636},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2774665057659149},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2631363272666931},{"id":"https://openalex.org/C109679912","wikidata":"https://www.wikidata.org/wiki/Q175932","display_name":"Avalanche photodiode","level":3,"score":0.17722508311271667},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.16379466652870178},{"id":"https://openalex.org/C94915269","wikidata":"https://www.wikidata.org/wiki/Q1834857","display_name":"Detector","level":2,"score":0.13086754083633423},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nems50311.2020.9265592","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems50311.2020.9265592","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2020 IEEE 15th International Conference on Nano/Micro Engineered and Molecular System (NEMS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306084","display_name":"U.S. Department of Energy","ror":"https://ror.org/01bj3aw27"},{"id":"https://openalex.org/F4320332359","display_name":"Office of Science","ror":"https://ror.org/00mmn6b08"},{"id":"https://openalex.org/F4320337480","display_name":"Basic Energy Sciences","ror":"https://ror.org/05mg91w61"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1973339006","https://openalex.org/W1996214499","https://openalex.org/W2007978820","https://openalex.org/W2017314863","https://openalex.org/W2017435217","https://openalex.org/W2025379078","https://openalex.org/W2029347203","https://openalex.org/W2052519425","https://openalex.org/W2053187981","https://openalex.org/W2072959248","https://openalex.org/W2085339560","https://openalex.org/W2094087345","https://openalex.org/W2128586193","https://openalex.org/W2128923591","https://openalex.org/W2132170989","https://openalex.org/W2135098046","https://openalex.org/W2151805512","https://openalex.org/W2323511170","https://openalex.org/W2555982942","https://openalex.org/W2885119732","https://openalex.org/W6700436257"],"related_works":["https://openalex.org/W1646556699","https://openalex.org/W2171671863","https://openalex.org/W1574541162","https://openalex.org/W2731946096","https://openalex.org/W2042345645","https://openalex.org/W2772320470","https://openalex.org/W2029068096","https://openalex.org/W4328131324","https://openalex.org/W2013839987","https://openalex.org/W2189181247"],"abstract_inverted_index":{"This":[0],"paper":[1],"explores":[2],"the":[3,10,29,48,68,77],"effect":[4,69],"of":[5,14,38,51,61,70],"floating":[6,55,63],"gate":[7,16,56,64,71],"structures":[8],"on":[9,76],"electric":[11],"field":[12],"distribution":[13],"perimeter":[15],"single":[17],"photon":[18],"avalanche":[19],"diodes":[20],"using":[21],"TCAD":[22],"Sentaurus":[23],"simulations.":[24],"Physical":[25],"models":[26],"used":[27],"for":[28],"simulation":[30,39,43],"have":[31],"been":[32],"discussed":[33],"extensively":[34],"to":[35],"expedite":[36],"reproduction":[37],"results":[40],"in":[41],"other":[42],"platforms.":[44],"The":[45],"simulations":[46],"estimate":[47],"I-V":[49],"characteristics":[50],"single-input":[52],"and":[53,66,73],"multiple-input":[54],"devices":[57],"as":[58],"a":[59],"function":[60],"applied":[62],"voltage":[65],"studies":[67],"oxide":[72],"polysilicon":[74],"thickness":[75],"device.":[78]},"counts_by_year":[],"updated_date":"2026-06-26T08:34:08.712188","created_date":"2025-10-10T00:00:00"}