{"id":"https://openalex.org/W2753907098","doi":"https://doi.org/10.1109/nems.2017.8017136","title":"Fabrication of liquid-gated molybdenum disulfide field-effect transistor","display_name":"Fabrication of liquid-gated molybdenum disulfide field-effect transistor","publication_year":2017,"publication_date":"2017-04-01","ids":{"openalex":"https://openalex.org/W2753907098","doi":"https://doi.org/10.1109/nems.2017.8017136","mag":"2753907098"},"language":"en","primary_location":{"id":"doi:10.1109/nems.2017.8017136","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2017.8017136","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021448891","display_name":"Jingjie Sha","orcid":"https://orcid.org/0000-0002-0797-4460"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jingjie Sha","raw_affiliation_strings":["School of Mechanical Engineering, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Mechanical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101414498","display_name":"Wei Xu","orcid":"https://orcid.org/0000-0002-7254-8273"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Wei Xu","raw_affiliation_strings":["School of Mechanical Engineering, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Mechanical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102778398","display_name":"Zhishan Yuan","orcid":"https://orcid.org/0000-0002-3630-2532"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhishan Yuan","raw_affiliation_strings":["School of Mechanical Engineering, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Mechanical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063374670","display_name":"Bing Xu","orcid":"https://orcid.org/0000-0002-7385-9954"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bing Xu","raw_affiliation_strings":["School of Mechanical Engineering, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Mechanical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089727554","display_name":"Yunfei Chen","orcid":"https://orcid.org/0000-0002-8682-868X"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yunfei Chen","raw_affiliation_strings":["School of Mechanical Engineering, Southeast University, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Mechanical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I76569877"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":4,"citation_normalized_percentile":{"value":0.1763202,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"319","issue":null,"first_page":"788","last_page":"791"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/molybdenum-disulfide","display_name":"Molybdenum disulfide","score":0.8829165697097778},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7408578395843506},{"id":"https://openalex.org/keywords/ohmic-contact","display_name":"Ohmic contact","score":0.6337204575538635},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.6075958609580994},{"id":"https://openalex.org/keywords/molybdenum","display_name":"Molybdenum","score":0.6058575510978699},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5857679843902588},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5413581728935242},{"id":"https://openalex.org/keywords/contact-resistance","display_name":"Contact resistance","score":0.529533326625824},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5096428394317627},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.49897241592407227},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.457226425409317},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.3035801649093628},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.19940781593322754},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19237583875656128},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.13797301054000854},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.12714150547981262},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.11802229285240173},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.07653000950813293}],"concepts":[{"id":"https://openalex.org/C2780423959","wikidata":"https://www.wikidata.org/wiki/Q424257","display_name":"Molybdenum disulfide","level":2,"score":0.8829165697097778},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7408578395843506},{"id":"https://openalex.org/C138230450","wikidata":"https://www.wikidata.org/wiki/Q2016597","display_name":"Ohmic contact","level":3,"score":0.6337204575538635},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.6075958609580994},{"id":"https://openalex.org/C549387045","wikidata":"https://www.wikidata.org/wiki/Q1053","display_name":"Molybdenum","level":2,"score":0.6058575510978699},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5857679843902588},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5413581728935242},{"id":"https://openalex.org/C123671423","wikidata":"https://www.wikidata.org/wiki/Q332329","display_name":"Contact resistance","level":3,"score":0.529533326625824},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5096428394317627},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.49897241592407227},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.457226425409317},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.3035801649093628},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.19940781593322754},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19237583875656128},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.13797301054000854},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.12714150547981262},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11802229285240173},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.07653000950813293},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0},{"id":"https://openalex.org/C147789679","wikidata":"https://www.wikidata.org/wiki/Q11372","display_name":"Physical chemistry","level":1,"score":0.0},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nems.2017.8017136","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2017.8017136","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Clean water and sanitation","id":"https://metadata.un.org/sdg/6","score":0.44999998807907104}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1920307830","https://openalex.org/W1966837020","https://openalex.org/W1968687892","https://openalex.org/W1972831960","https://openalex.org/W1987253619","https://openalex.org/W1993916317","https://openalex.org/W2017871657","https://openalex.org/W2021994802","https://openalex.org/W2023711677","https://openalex.org/W2065599687","https://openalex.org/W2087638855","https://openalex.org/W2104190171","https://openalex.org/W2121875362","https://openalex.org/W2127007102","https://openalex.org/W2138840014","https://openalex.org/W2154565586","https://openalex.org/W2157679815","https://openalex.org/W2163900876"],"related_works":["https://openalex.org/W1975027344","https://openalex.org/W2017076333","https://openalex.org/W2051353231","https://openalex.org/W2095133813","https://openalex.org/W1977156920","https://openalex.org/W3015744687","https://openalex.org/W1965890915","https://openalex.org/W2080631918","https://openalex.org/W2743725414","https://openalex.org/W3163578924"],"abstract_inverted_index":{"Two-dimensional":[0],"molybdenum":[1,30,117,124,143,164],"disulfide":[2,31,40,118,125,144,165],"is":[3],"gradually":[4],"emerging":[5],"as":[6,85],"the":[7,24,46,52,65,68,73,81,86,92,108,111,123,138,147,153,156,162,175],"novel":[8],"semiconductor":[9],"material(channel)":[10],"to":[11,44,137],"connect":[12],"two":[13],"electrodes":[14,56,115],"(source":[15],"and":[16,54,80,98,113,122],"drain)":[17],"of":[18,67,91,155],"field-effect":[19,32,74,166],"transistor.":[20],"For":[21],"effective":[22],"detecting":[23],"biological":[25],"molecules,":[26],"a":[27,171],"newly":[28],"liquid-gated":[29,163],"transistor":[33,75],"was":[34,42,62,76,84,94,120,128,135,150],"fabricated":[35],"in":[36,78,96,99,106,132],"this":[37],"paper.":[38],"Molybdenum":[39],"film":[41,119,126],"transferred":[43],"cover":[45],"silicon":[47,69],"nitride":[48,70],"substrate":[49],"on":[50,64,174],"which":[51,134,159],"drain":[53,112],"source":[55,114],"were":[57],"deposited.":[58],"The":[59,88,102],"through":[60,116],"hole":[61],"created":[63],"back":[66],"substrate.":[71],"Then":[72],"immersed":[77],"electrolyte,":[79],"NaCl":[82],"solution":[83,139],"gate.":[87],"electrical":[89],"characterization":[90],"device":[93],"investigated":[95],"air":[97],"buffer":[100,107],"respectively.":[101],"results":[103],"indicated":[104],"that":[105,131,161],"contact":[109,148,168],"between":[110],"ohmic":[121],"resistance":[127,149,169],"smaller":[129],"than":[130],"air,":[133],"due":[136],"ions":[140],"doped":[141],"into":[142],"film.":[145],"Additionally,":[146],"decreased":[151],"with":[152],"increasing":[154],"back-gate":[157,176],"voltage,":[158],"showed":[160],"transistor's":[167],"had":[170],"strong":[172],"dependence":[173],"voltage.":[177]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}