{"id":"https://openalex.org/W2284297204","doi":"https://doi.org/10.1109/nems.2015.7147473","title":"A parametric study of ICP-RIE etching on a lithium niobate substrate","display_name":"A parametric study of ICP-RIE etching on a lithium niobate substrate","publication_year":2015,"publication_date":"2015-04-01","ids":{"openalex":"https://openalex.org/W2284297204","doi":"https://doi.org/10.1109/nems.2015.7147473","mag":"2284297204"},"language":"en","primary_location":{"id":"doi:10.1109/nems.2015.7147473","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2015.7147473","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109230175","display_name":"Chun-Ming Chang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chun-Ming Chang","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108514324","display_name":"Chih\u2010Sheng Yu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chih-Sheng Yu","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066930545","display_name":"Fan-Chun Hsieh","orcid":"https://orcid.org/0000-0001-9140-2790"},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Fan-Chun Hsieh","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077555872","display_name":"Chun-Ting Lin","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chun-Ting Lin","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103988877","display_name":"Tsung\u2010Tao Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tsung-Tao Huang","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5049373474","display_name":"Ping-Hung Lin","orcid":"https://orcid.org/0000-0003-3491-4663"},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ping-Hung Lin","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108448748","display_name":"Jiann\u2010Shiun Kao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Jiann-Shiun Kao","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103988877","display_name":"Tsung\u2010Tao Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Tsung-Tao Huang","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110146116","display_name":"Chien\u2010Nan Hsiao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Chien-Nan Hsiao","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5007701238","display_name":"Ming\u2010Hua Shiao","orcid":null},"institutions":[{"id":"https://openalex.org/I4210166867","display_name":"National Institutes of Applied Research","ror":"https://ror.org/05wcstg80","country_code":"TW","type":"government","lineage":["https://openalex.org/I4210128167","https://openalex.org/I4210166867"]}],"countries":["TW"],"is_corresponding":false,"raw_author_name":"Ming-Hua Shiao","raw_affiliation_strings":["Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan","institution_ids":["https://openalex.org/I4210166867"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I4210166867"],"apc_list":null,"apc_paid":null,"fwci":0.4118,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.57125951,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"485","last_page":"486"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11160","display_name":"Acoustic Wave Resonator Technologies","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11050","display_name":"Photorefractive and Nonlinear Optics","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.6691372394561768},{"id":"https://openalex.org/keywords/photoresist","display_name":"Photoresist","score":0.6315747499465942},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5887194275856018},{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5402313470840454},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.5282536745071411},{"id":"https://openalex.org/keywords/reactive-ion-etching","display_name":"Reactive-ion etching","score":0.4851889908313751},{"id":"https://openalex.org/keywords/argon","display_name":"Argon","score":0.4724424481391907},{"id":"https://openalex.org/keywords/surface-roughness","display_name":"Surface roughness","score":0.4678277373313904},{"id":"https://openalex.org/keywords/inductively-coupled-plasma","display_name":"Inductively coupled plasma","score":0.4642522931098938},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.21584215760231018},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.21467599272727966},{"id":"https://openalex.org/keywords/plasma","display_name":"Plasma","score":0.11267608404159546},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.09512737393379211},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09209620952606201},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.09088969230651855},{"id":"https://openalex.org/keywords/chromatography","display_name":"Chromatography","score":0.08194604516029358},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.062750905752182}],"concepts":[{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6691372394561768},{"id":"https://openalex.org/C134406635","wikidata":"https://www.wikidata.org/wiki/Q1439684","display_name":"Photoresist","level":3,"score":0.6315747499465942},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5887194275856018},{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5402313470840454},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.5282536745071411},{"id":"https://openalex.org/C130472188","wikidata":"https://www.wikidata.org/wiki/Q1640159","display_name":"Reactive-ion etching","level":4,"score":0.4851889908313751},{"id":"https://openalex.org/C547737533","wikidata":"https://www.wikidata.org/wiki/Q696","display_name":"Argon","level":2,"score":0.4724424481391907},{"id":"https://openalex.org/C107365816","wikidata":"https://www.wikidata.org/wiki/Q114817","display_name":"Surface roughness","level":2,"score":0.4678277373313904},{"id":"https://openalex.org/C95974651","wikidata":"https://www.wikidata.org/wiki/Q2454436","display_name":"Inductively coupled plasma","level":3,"score":0.4642522931098938},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.21584215760231018},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.21467599272727966},{"id":"https://openalex.org/C82706917","wikidata":"https://www.wikidata.org/wiki/Q10251","display_name":"Plasma","level":2,"score":0.11267608404159546},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09512737393379211},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09209620952606201},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.09088969230651855},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.08194604516029358},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.062750905752182},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/nems.2015.7147473","is_oa":false,"landing_page_url":"https://doi.org/10.1109/nems.2015.7147473","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5099999904632568,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W44350144","https://openalex.org/W1986616649","https://openalex.org/W1994528177","https://openalex.org/W2006906797","https://openalex.org/W2070413655","https://openalex.org/W6601738482"],"related_works":["https://openalex.org/W2535465976","https://openalex.org/W1992895626","https://openalex.org/W2142584595","https://openalex.org/W2093286625","https://openalex.org/W2359313340","https://openalex.org/W2070736010","https://openalex.org/W1529090358","https://openalex.org/W2089438580","https://openalex.org/W2086165354","https://openalex.org/W4239793335"],"abstract_inverted_index":{"Z-cut":[0],"LiNbO3single":[1],"crystal":[2],"wafers":[3],"were":[4,45,77,92,111,161],"etched":[5,100],"by":[6,16],"the":[7,18,28,42,48,80,84,88,99,105,117,123,133,143,155,159,176,198],"inductively":[8],"coupled":[9],"plasma":[10],"reactive":[11],"ion":[12],"etching":[13,49,81,90,114,134,207],"(ICP-RIE)":[14],"technique":[15],"using":[17],"boron":[19],"trichloride":[20],"(BCl3)/":[21],"Argon":[22],"(Ar)":[23],"mixture":[24],"gases.":[25],"Effects":[26],"of":[27,41,87,98,116,154,174,197],"ICP":[29,106,124],"power":[30,33,107,110,125],"and":[31,53,73,83,108,126,158,189],"RF":[32,109,127],"ranged":[34,61],"from":[35,62],"100":[36,139],"W":[37,40],"to":[38,65,163,194],"700":[39],"ICP-RIE":[43],"system":[44],"studied":[46],"on":[47],"rate,":[50],"surface":[51,96,177],"roughness,":[52],"corresponding":[54],"DC":[55],"bias":[56],"under":[57],"different":[58],"working":[59,144],"pressures":[60],"10":[63],"mTorr":[64],"50":[66],"mTorr,":[67],"respectively.":[68,169],"Besides,":[69],"photoresist,":[70],"Cr(20%)/Ni(80%)":[71],"alloy":[72],"Ni":[74],"thin":[75],"films":[76],"used":[78],"as":[79],"mask,":[82],"selective":[85,152],"ratios":[86,153],"three":[89],"masks":[91],"also":[93],"compared.":[94],"The":[95,113,151],"roughness":[97,178],"LiNbO3substrate":[101,118,199],"was":[102,119,136,146],"increased":[103,120],"when":[104,142],"increased.":[112],"rate":[115,135,208],"with":[121],"increasing":[122],"power.":[128],"It":[129],"is":[130,192,209],"noted":[131],"that":[132],"greater":[137,185,210],"than":[138,180,186,211],"nm/":[140,213],"min":[141],"pressure":[145],"controlled":[147],"at":[148],"30":[149],"mTorr.":[150],"photoresist":[156],"Cr/Ni":[157],"nickel":[160],"calculated":[162],"be":[164,195,201],"approximately":[165],"0.4,":[166],"7,":[167],"9,":[168],"Under":[170],"suitable":[171],"processing":[172],"parameters":[173],"ICP-RIE,":[175],"less":[179],"40":[181],"nm,":[182],"structure":[183],"depth":[184],"3":[187],"\u03bcm,":[188],"sidewall":[190],"angle":[191],"estimated":[193],"120\u00b0":[196],"can":[200],"obtained":[202],"within":[203],"28":[204],"min,":[205],"which":[206],"117":[212],"min.":[214]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}